Method for forming capacitor, semiconductor device, module, and electronic device
A miniaturized transistor is provided. A transistor with low parasitic capacitance is provided. A transistor having high frequency characteristics is provided. A transistor having a large amount of on-state current is provided. A semiconductor device including the transistor is provided. A semiconductor device with high integration is provided. A novel capacitor is provided. The capacitor includes a first conductor, a second conductor, and an insulator. The first conductor includes a region overlapping with the second conductor with the insulator provided therebetween. The first conductor includes tungsten and silicon. The insulator includes a silicon oxide film that is formed by oxidizing the first conductor.
1. A method for forming a capacitor, comprising steps of:
forming a first conductor;
forming a first insulator over the first conductor;
forming an opening in the first insulator, the opening reaching a top surface of the first conductor;
forming a second conductor over the first insulator and in the opening;
performing a plasma treatment containing oxygen on the second conductor, so that a silicon oxide film is formed on a surface of the second conductor and in the opening;
forming a third conductor over the silicon oxide film to fill the opening; and
performing a polishing treatment so that top surfaces of the second conductor, the silicon oxide film, and the third conductor are substantially level with a top surface of the first insulator,
wherein the second conductor includes tungsten and silicon.
2. The method for forming a capacitor according to claim 1 , wherein the plasma treatment includes high-density plasma treatment.
3. A method for manufacturing a semiconductor device,
wherein the semiconductor device comprises a capacitor and a transistor, the method further comprising a step of:
forming a drain electrode of the transistor,
wherein the capacitor comprises a first electrode and a second electrode,
wherein the first electrode of the capacitor is electrically connected to the drain electrode, and
wherein the capacitor is formed by the method according to claim 1 .
4. The method for forming a capacitor according to claim 1 ,
wherein the first conductor serves as a first electrode of the capacitor,
wherein the third conductor serves as a second electrode of the capacitor, and
wherein the silicon oxide film serves as a dielectric of the capacitor.
5. The method for forming a capacitor according to claim 1 , further comprising a step of forming a fourth conductor in contact with the top surface of the third conductor.
6. The method for forming a capacitor according to claim 1 , wherein the silicon oxide film is formed by oxidizing the second conductor.
7. A method for forming a capacitor, comprising steps of:
forming a first conductor;
forming a first insulator over the first conductor;
forming an opening in the first insulator, the opening reaching a top surface of the first conductor;
forming a second conductor over the first insulator and in the opening;
performing a plasma treatment containing oxygen on the second conductor, so that a second insulator is formed on a surface of the second conductor and in the opening;
forming a third conductor over the second insulator and in the opening; and
performing a polishing treatment on the second conductor, the second insulator, and the third conductor, so that the opening is filled and a top surface of the first insulator is exposed.
8. The method for forming a capacitor according to claim 7 , wherein the plasma treatment includes high-density plasma treatment.
9. A method for manufacturing a semiconductor device,
wherein the semiconductor device comprises a capacitor and a transistor, the method further comprising a step of:
forming a drain electrode of the transistor,
wherein the capacitor comprises a first electrode and a second electrode,
wherein the first electrode of the capacitor is electrically connected to the drain electrode, and
wherein the capacitor is formed by the method according to claim 7 .
10. The method for forming a capacitor according to claim 7 ,
wherein the first conductor serves as a first electrode of the capacitor,
wherein the third conductor serves as a second electrode of the capacitor, and
wherein the second insulator serves as a dielectric of the capacitor.
11. The method for forming a capacitor according to claim 7 , further comprising a step of forming a fourth conductor in contact with a top surface of the third conductor.
12. The method for forming a capacitor according to claim 7 , wherein the second insulator is formed by oxidizing the second conductor.