Magnetoresistance element with increased operational range
A magnetoresistance (MR) element includes a first stack portion comprising a first plurality of layers including a first spacer layer having a first thickness and a first material selected to result in the first stack portion having a first sensitivity to the applied magnetic field. The MR element also has a second stack portion comprising a second plurality of layers, including a second spacer layer having a second thickness to result in the second stack portion having a second sensitivity to the applied magnetic field. The first thickness may be different than the second thickness resulting in the first sensitivity being different than the second sensitivity.
1. A magnetoresistance element deposited upon a substrate, comprising:
a first stack portion comprising a first plurality of layers, wherein the first plurality of layers comprises:
a first pinned layer structure;
a first free layer structure; and
a first spacer layer in contact with the first pinned layer structure and the first free layer structure and having a first thickness and a first material selected to result in the first stack portion having a first sensitivity to the applied magnetic field;
a second stack portion comprising a second plurality of layers, wherein the second stack portion is disposed over the first stack portion, wherein the second plurality of layers comprises:
a second pinned layer structure;
a second free layer structure; and
a second spacer layer in contact with the second pinned layer structure and the second free layer structure and having a second thickness and a second material selected to result in the second stack portion having a second sensitivity to the applied magnetic field, wherein the first thickness is different than the second thickness resulting in the first sensitivity being different than the second sensitivity, wherein the first sensitivity corresponds to a first change in a resistance of the magnetoresistance element and the second sensitivity corresponds to a second change in the resistance of the magnetoresistance element; and
an electroconductive layer being in direct contact with the second stack portion and being in direct contact with the first stack portion,
wherein the first plurality of layers and the second plurality of layers each consist of a different number of layers,
wherein the first stack portion and the second stack portion each consist of a different number of layers.
2. The magnetoresistance element of claim 1 , wherein the first and second spacer layers are comprised of Copper (Cu).
3. The magnetoresistance element of claim 1 , wherein the first and second spacer layers are comprised of insulating layers.
4. The magnetoresistance element of claim 1 , wherein the first and second spacer layers are comprised of MgO.
5. The magnetoresistance element of claim 1 , wherein the first thickness of the first spacer layer is about 0.1 nm or greater.
6. The magnetoresistance element of claim 1 , wherein the first and second pinned layer structures each include one respective pinned layer.
7. The magnetoresistance element of claim 1 , wherein the first and second pinned layer structures each comprise a respective synthetic antiferromagnetic (SAF) structure.
8. The magnetoresistance element of claim 1 , wherein the magnetoresistance element comprises one or more of a giant magnetoresistance (GMR) element, a magnetic tunnel junction (MTJ) element, a tunneling magnetoresistance (TMR) element, or a spin valve.
9. The magnetoresistance element of claim 1 , wherein the magnetoresistance element is provided in a magnetic field sensor.
10. The magnetoresistance element of claim 1 , wherein the electroconductive layer is a pinning layer.
11. The magnetoresistance element of claim 1 , wherein the electroconductive layer is a platinum manganese (PtMn).
12. The magnetic field sensor of claim 1 , wherein the first and second substantially linear responses are provided at least in part from the electroconductive layer.
13. The magnetoresistance element of claim 1 , wherein the first thickness differs from the second thickness by about 25%.
14. The magnetoresistance element of claim 1 , wherein the second stack portion comprises a single pinning layer and a single pinned layer,
wherein the second stack portion is a double-pinned arrangement,
wherein the single pinning layer pins the single pinned layer and the electroconductive layer pins the second pinned layer structure together to form the double-pinned arrangement in the second stack portion,
wherein the first stack portion is single-pinned arrangement,
wherein the electroconductive layer pins the first pinned layer structure to form the single-pinned arrangement in the first stack portion.
15. The magnetoresistance element of claim 1 , wherein the first and second spacer layers are comprised of conductive layers.
16. The magnetoresistance element of claim 15 , wherein the second thickness of the second spacer layer is 0.1 nm or greater.
17. A magnetic field sensor comprising:
one or more magnetoresistance elements deposited upon a substrate, one of the magnetoresistance elements comprising:
a first stack portion comprising a first plurality of layers, wherein the first plurality of layers comprises:
a first pinned layer structure;
a first free layer structure; and
a first spacer layer in contact with the first pinned layer structure and the first free layer structure and having a first thickness and a first material selected to result in the first stack portion having a first sensitivity to the applied magnetic field;
a second stack portion comprising a second plurality of layers, wherein the second stack portion is disposed over the first stack portion, and wherein the second plurality of layers comprises:
a second pinned layer structure;
a second free layer structure;
a second spacer layer in contact with the second pinned layer structure and the second free layer structure and having a second thickness selected to result in the second stack portion having a second sensitivity to the applied magnetic field, wherein the first thickness is different than the second thickness resulting in the first sensitivity being different than the second sensitivity, wherein the first sensitivity corresponds to a first change in a resistance of the magnetoresistance element and the second sensitivity corresponds to a second change in the resistance of the magnetoresistance element; and
an electroconductive layer being in direct contact with the second stack portion and being in direct contact with the first stack portion,
wherein the first plurality of layers and the second plurality of layers each consist of a different number of layers,
wherein the first stack portion and the second stack portion each consist of a different number of layers.
18. The magnetic field sensor of claim 17 wherein the first spacer layer comprises MgO.
19. The magnetic field sensor of claim 17 , wherein the second spacer layer comprises copper and the second thickness of the second spacer layer is 2.4 nm or greater.
20. The magnetic field sensor of claim 17 , wherein the second spacer layer comprises MgO.
21. The magnetic field sensor of claim 17 , wherein the electroconductive layer is a pinning layer.
22. The magnetic field sensor of claim 17 , wherein the electroconductive layer is a platinum manganese (PtMn).
23. The magnetic field sensor of claim 17 , wherein the first and second substantially linear responses are provided at least in part from the electroconductive layer.
24. The magnetic field sensor of claim 17 , wherein the first thickness differs from the second thickness by about 25%.
25. The magnetic field sensor of claim 17 , wherein the second stack portion comprises a single pinning layer and a single pinned layer,
wherein the second stack portion is a double-pinned arrangement,
wherein the single pinning layer pins the single pinned layer and the electroconductive layer pins the second pinned layer structure together to form the double-pinned arrangement in the second stack portion,
wherein the first stack portion is single-pinned arrangement,
wherein the electroconductive layer pins the first pinned layer structure to form the single-pinned arrangement in the first stack portion.
26. The magnetic field sensor of claim 17 wherein the first spacer layer comprises copper.
27. The magnetic field sensor of claim 26 wherein the first thickness of the first spacer layer is 2.4 nm or greater.
28. A magnetic field sensor, comprising:
a magnetoresistance element configured to generate first and second substantially linear responses to an applied magnetic field, wherein the first and second substantially linear responses have substantially zero offset with respect to an expected response of the magnetoresistance element at an applied magnetic field strength of about zero Oersteds;
wherein the magnetoresistance element comprises:
a first stack portion comprising a first plurality of layers, wherein the first plurality of layers comprises:
a first pinned layer structure;
a first free layer structure; and
a first spacer layer in contact with the first pinned layer structure and the first free layer structure and having a first thickness and a first material selected to result in the first stack portion having a first sensitivity to the applied magnetic field;
a second stack portion comprising a second plurality of layers, wherein the second stack portion is disposed over the first stack portion, wherein the second plurality of layers comprises:
a second pinned layer structure;
a second free layer structure;
a second spacer layer in contact with the second pinned layer structure and the second free layer structure and having a second thickness and a second material selected to result in the second stack portion having a second sensitivity to the applied magnetic field, wherein the first thickness is different than the second thickness resulting in the first sensitivity being different than the second sensitivity, wherein the first sensitivity corresponds to a first change in a resistance of the magnetoresistance element and the second sensitivity corresponds to a second change in the resistance of the magnetoresistance element; and
an electroconductive layer being in direct contact with the second stack portion and being in direct contact with the first stack portion,
wherein the first plurality of layers and the second plurality of layers each consist of a different number of layers,
wherein the first stack portion and the second stack portion each consist of a different number of layers.
29. The magnetic field sensor of claim 28 , wherein the first thickness differs from the second thickness by about 25%.
30. The magnetic field sensor of claim 28 , wherein the second stack portion comprises a single pinning layer and a single pinned layer,
wherein the second stack portion is a double-pinned arrangement,
wherein the single pinning layer pins the single pinned layer and the electroconductive layer pins the second pinned layer structure together to form the double-pinned arrangement in the second stack portion,
wherein the first stack portion is single-pinned arrangement,
wherein the electroconductive layer pins the first pinned layer structure to form the single-pinned arrangement in the first stack portion.