Laser device and process for fabricating such a laser device
The invention relates to a III-V heterostructure laser device ( 1 ) arranged in and/or on silicon, comprising: a III-V heterostructure gain medium ( 3 ); and an optical rib waveguide ( 11 ), arranged facing the gain medium ( 3 ) and comprising a slab waveguide ( 15 ) equipped with a longitudinal rib ( 17 ), the optical rib waveguide ( 11 ) being arranged in the silicon. The optical rib waveguide ( 11 ) is oriented so that at least one Bragg grating ( 19, 19 a, 19 b ) is arranged on that side ( 21 ) of the slab waveguide ( 15 ) which is proximal relative to the gain medium ( 3 ) and in that the rib ( 17 ) is placed on that side ( 23 ) of the slab waveguide ( 15 ) that is distal relative to the gain medium ( 3 ).
1. A III-V heterostructure laser device arranged in and/or on a silicon substrate, comprising:
a III-V heterostructure gain medium being integrated on the silicon substrate; and
an optical rib waveguide, arranged facing the gain medium and comprising a slab waveguide equipped with a longitudinal rib, the optical rib waveguide being arranged in the silicon substrate;
wherein the optical rib waveguide is oriented so that a Bragg grating is arranged on a side of the slab waveguide and is directly beneath and facing the III-V heterostructure gain medium and which is proximal relative to the gain medium without being arranged on a side of the slab waveguide that is distal relative to the gain medium, and in that the longitudinal rib is placed on the side of the slab waveguide that is distal relative to the gain medium.
2. The laser device according to claim 1 , wherein the Bragg grating comprises a quarter-wave plate in order to ensure a single-mode operation.
3. The laser device according to claim 1 , wherein the reflectivity of the Bragg grating is comprised between 65% and 80%.
4. The laser device according to claim 1 , wherein the width of the longitudinal rib of the rib waveguide increases in the direction of an output waveguide in order to form a mode converter.
5. The laser device according to claim 4 , wherein the minimum width of the longitudinal rib is comprised between 0.4 μm and 0.7 μm.
6. The laser device according to claim 4 , wherein the maximum width of the longitudinal rib is larger than 1.1 μm.
7. The laser device according to claim 1 , wherein the height of the longitudinal rib is comprised between 100 nm 200 nm.
8. The laser device according to claim 1 , wherein the height of the slab guide is comprised between 250 nm and 300 nm.
9. The laser device according to claim 1 , wherein the slab waveguide and the longitudinal rib are each formed from crystalline silicon or one from crystalline silicon and the other from amorphous silicon.
10. The laser device according to claim 1 , wherein the longitudinal rib is made of crystalline silicon and the slab waveguide is formed by two layers, the layer making contact with the longitudinal rib also being made of crystalline silicon and the other, which is proximal to the gain medium, being made of amorphous silicon.
11. The laser device according to claim 1 , wherein the III-V heterostructure gain medium is wider than the optical rib waveguide in a direction transverse to the propagation direction of light in the waveguide.