Cutting elements, and related earth-boring tools and methods

1. A cutting element, comprising:

a cutting table comprising:

inter-bonded diamond particles; and

a thermally stable material within interstitial spaces between the inter-bonded diamond particles, the thermally stable material comprising:

a carbide precipitate having the general chemical formula:

A 3 XZ 1-n ,

where A comprises one or more of Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, Hf, Ta, W, Re, Os, Ir, Pt, Au, Hg, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Ac, Th, Pa, and U;

X comprises one or more of Al, Ga, Sn, Be, Bi, Te, Sb, Se, As, Ge, Si, B, and P;

Z comprises C; and

n is greater than or equal to 0 and less than or equal to 0.75; and

one or more of an FCC L1 2 phase precipitate, an FCC DO 22 phase precipitate, a D8 5 phase precipitate, a DO 19 phase precipitate, a BCC/B2 phase precipitate, and an FCC L1 0 phase precipitate.

2. The cutting element of claim 1 , further comprising a supporting substrate directly attached to an end of the cutting table.

3. The cutting element of claim 2 , wherein the supporting substrate comprises:

a homogenized binder comprising C, W, one or more of Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, Hf, Ta, Re, Os, Ir, Pt, Au, Hg, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Ac, Th, Pa, and U, and one or more of Al, Ga, Sn, Be, Bi, Te, Sb, Se, As, Ge, Si, B, and P; and

WC particles dispersed in the homogenized binder.

4. The cutting element of claim 3 , wherein the homogenized binder has a melting temperature greater than or equal to about 750° C.

5. A cutting element, comprising:

a cutting table comprising:

inter-bonded diamond particles; and

a thermally stable material within interstitial spaces between the inter-bonded diamond particles, the thermally stable material comprising a carbide precipitate having the general chemical formula:

A 3 XZ 1-n ,

where A comprises one or more of Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, Hf, Ta, W, Re, Os, Ir, Pt, Au, Hg, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Ac, Th, Pa, and U;

X comprises one or more of Al, Ga, Sn, Be, Bi, Te, Sb, Se, As, Ge, Si, B, and P;

Z comprises C; and

n is greater than or equal to 0 and less than or equal to 0.75; and

a supporting substrate directly attached to an end of the cutting table, the supporting substrate comprising:

a homogenized binder comprising a substantially homogeneous peritectic alloy comprising C, W, one or more of Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, Hf, Ta, Re, Os, Ir, Pt, Au, Hg, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Ac, Th, Pa, and U, and one or more of Al, Ga, Sn, Be, Bi, Te, Sb, Se, As, Ge, Si, B, and P; and

WC particles dispersed in the homogenized binder.

6. A cutting element, comprising:

a cutting table comprising:

inter-bonded diamond particles; and

a thermally stable material within interstitial spaces between the inter-bonded diamond particles, the thermally stable material comprising a carbide precipitate having the general chemical formula:

A 3 XZ 1-n ,

where A comprises one or more of Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, Hf, Ta, W, Re, Os, Ir, Pt, Au, Hg, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Ac, Th, Pa, and U;

X comprises one or more of Al, Ga, Sn, Be, Bi, Te, Sb, Se, As, Ge, Si, B, and P;

Z comprises C; and

n is greater than or equal to 0 and less than or equal to 0.75; and

a supporting substrate directly attached to an end of the cutting table, the supporting substrate comprising:

a homogenized binder substantially free of Co, the homogenized binder comprising C, W, one or more of Sc, Ti, V, Cr, Mn, Fe, Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, Hf, Ta, Re, Os, Ir, Pt, Au, Hg, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Ac, Th, Pa, and U, and one or more of Al, Ga, Sn, Be, Bi, Te, Sb, Se, As, Ge, Si, B, and P; and

WC particles dispersed in the homogenized binder.

7. The cutting element of claim 2 , wherein:

a ratio of a combined height of the supporting substrate and the cutting table to a maximum outer diameter of the cutting table is within a range of from about 0.1 to about 50; and

the cutting table exhibits a maximum thickness within a range of from about 0.3 mm to about 5 mm.

8. The cutting element of claim 2 , wherein the cutting table comprises:

an apex; and

at least one side surface extending from at least one location at or proximate an interface between the supporting substrate and the cutting table toward the apex, the at least one side surface extending at one or more angles within a range of from about 5 degrees to about 85 degrees relative to a side surface of the supporting substrate.

9. The cutting element of claim 8 , wherein the at least one side surface of the cutting table comprises:

at least one conical side surface extending upwardly and inwardly from at least one location at or proximate an interface between the supporting substrate and the cutting table toward the apex; and

at least one flat side surface adjacent the at least one conical side surface and extending upwardly and inwardly from at least one additional location at or proximate the interface between the supporting substrate and the cutting table toward the apex.