Resistive switching memory device
Provided herein are resistive switching devices comprising a nanocomposite, an inert electrode and an active electrode. Also provided are methods for preparing and using the disclosed resistive switching devices.
1. A resistive switching device comprising
a nanocomposite comprising a polymer with a metal oxide infiltrated throughout the polymer;
an inert electrode and;
an active electrode, wherein the inert electrode and the active electrode are separated by the nanocomposite, and the active electrode has an area of 1,000 μm 2 to 20,000 μm 2 .
2. The resistive switching device of claim 1 , wherein the polymer comprises poly(methyl methacrylate), polydimethyl siloxane, polyimide, bisphenol A novolac epoxy, or a mixture thereof.
3. The resistive switching device of claim 2 , wherein the polymer comprises poly(methyl methacrylate).
4. The resistive switching device of claim 1 , wherein the metal oxide comprises aluminum oxide (Al 2 O 3 ), titanium oxide (TiO 2 ), hafnium oxide (HfO 2 ), zinc oxide (ZnO), or a mixture thereof.
5. The resistive switching device of claim 4 , wherein the metal oxide comprises Al 2 O 3 .
6. The resistive switching device of claim 1 , wherein the nanocomposite has a thickness of 10 nm to 50 nm.
7. The resistive switching device of claim 6 , wherein the nanocomposite has a thickness of 10 nm.
8. The resistive switching device of claim 1 , wherein the nanocomposite comprises a porous section.
9. The resistive switching device of claim 8 , wherein the porous section of the nanocomposite comprises pore sizes of about 1 nm.
10. The resistive switching device of claim 1 , wherein the inert electrode comprises platinum, palladium, titanium, gold, or a mixture thereof.
11. The resistive switching device of claim 10 , wherein the inert electrode comprises platinum, titanium, or a combination of.
12. The resistive switching device of claim 1 , wherein the inert electrode has a thickness of 30 to 70 nm.
13. The resistive switching device of claim 1 , wherein the active electrode comprises gold or platinum and either silver or copper.
14. The resistive switching device of claim 13 , wherein the active electrode comprises a film of silver or copper with a gold layer on top.
15. The resistive switching device of claim 14 , wherein the film of silver or copper has a thickness of 5 to 20 nm and the gold layer has a thickness of 50 nm to 100 nm.
16. The resistive switching device of claim 1 , further comprising a silicon substrate under the inert electrode, optionally where the silicon substrate comprises a p-type dopant with resistivity of 1 to 10 Ω/cm.
17. The resistive switching device of claim 1 having a switching current of 500 nA to 100 μA, or an operating voltage of about 400 mV.
18. A method of preparing the resistive switching device of claim 1 comprising
(a) depositing the polymer on the first electrode by spin-coating to form a polymer layer, baking the polymer layer at a temperature of 180° C., and optionally irradiating a portion of the polymer layer with an electron beam to form a higher porosity polymer;
(b) infiltrating the polymer layer with a metal oxide using sequential infiltration synthesis via atomic layer deposition to form the nanocomposite; and
(c) depositing the second electrode on the nanocomposite by photolithography followed by electron beam evaporation of the second electrode metal or metals.
19. The method of claim 18 , wherein the second electrode is prepared by electron beam evaporation of silver or copper to a thickness of 10 nm then electron beam evaporation of gold to a thickness of 70 nm.
20. A resistive switching device comprising
a nanocomposite comprising a polymer with a metal oxide infiltrated throughout the polymer, and the nanocomposite having a porous section with pore sizes of about 1 nm;
an inert electrode and;
an active electrode,
wherein the inert electrode and the active electrode are separated by the nanocomposite.
21. A resistive switching device comprising
a nanocomposite comprising a polymer with a metal oxide infiltrated throughout the polymer;
an inert electrode and;
an active electrode comprising gold or platinum and either silver or copper,
wherein the inert electrode and the active electrode are separated by the nanocomposite.