Semiconductor apparatus
A semiconductor apparatus including a substrate, an electrostatic discharge protection device, a resistor device, and a first metal layer is provided. The substrate defines a pad area and includes a first area and a second area. The first area has a recess, the second area is disposed in the recess, and the pad area is partially overlapped with the first area and the second area. The electrostatic discharge protection device is disposed in the first area of the substrate. The resistor device is disposed in the second area of the substrate. The first metal layer is disposed above and electrically connected to the electrostatic discharge protection device and the resistor device.
1. A semiconductor apparatus, comprising:
a substrate, defining a gate pad area;
an electrostatic discharge protection device, having a closed ring structure with a recess;
a resistor device, disposed in the recess of the closed ring structure; and
a first metal layer, disposed above and electrically connected to the electrostatic discharge protection device and the resistor device,
wherein the gate pad area is partially overlapped with the electrostatic discharge protection device and the resistor device.
2. The semiconductor apparatus of claim 1 , further comprising:
an insulation layer, disposed above the electrostatic discharge protection device and the resistor device, wherein a first contact portion, a second contact portion and a third contact portion are disposed in the insulation layer.
3. The semiconductor apparatus of claim 2 , wherein the first contact portion is continuously ring-shaped and disposed on an inner side of the ring shape structure.
4. The semiconductor apparatus of claim 2 , wherein the third contact portion is C-shaped and disposed on an outer side of the ring shape structure.
5. The semiconductor apparatus of claim 2 , wherein the first metal layer is connected to the electrostatic discharge protection device through the first contact portion, the first metal layer is connected to the resistor device through the second contact portion, and a second metal layer is connected to the electrostatic discharge protection device through the third contact portion.
6. The semiconductor apparatus of claim 1 , wherein the electrostatic discharge protection device comprises:
a plurality of first doped layers, having a first conductivity type and disposed on the substrate; and
a plurality of second doped layers, having a second conductivity type and disposed on the substrate, the second conductivity type being opposite to the first conductivity type,
wherein the first doped layers and the second doped layers are alternately arranged.
7. The semiconductor apparatus of claim 6 , wherein each of the first doped layers and the second doped layers has a ring shape structure.
8. The semiconductor apparatus of claim 6 , wherein the first metal layer is electrically connected to one of the plurality of first doped layers away from the resistor device through the first contact portion, and a second metal layers is electrically connected to another one of the plurality of first doped layers close to the resistor device through the third contact portion.
9. The semiconductor apparatus of claim 1 , wherein the resistor device comprises a third doped layer having a first conductivity type and disposed on the substrate.
10. The semiconductor apparatus of claim 9 , wherein the first metal layer is electrically connected to the third doped layer through a second contact portion, and a third metal layer is electrically connected to the third doped layer through a fourth contact portion.
11. The semiconductor apparatus of claim 10 , wherein the second contact portion and the fourth contact portion are block-shaped.
12. The semiconductor apparatus of claim 10 , wherein the second contact portion and the fourth contact portion are strip-shaped.
13. The semiconductor apparatus of claim 9 , wherein the third doped layer comprises:
a first end portion, disposed close to the electrostatic discharge protection device;
a second end portion, disposed away from the electrostatic discharge protection device; and
a connection portion, connecting the first end portion and the second end portion,
wherein an extending direction of the first end portion and the second end portion is different from an extending direction of the connection portion.
14. The semiconductor apparatus of claim 13 , wherein the first metal layer is electrically connected to the first end portion of the third doped layer through a second contact portion, and a third metal layer is electrically connected to the second end portion of the third doped layer through a fourth contact portion.
15. The semiconductor apparatus of claim 14 , wherein the second contact portion and the fourth contact portion are strip-shaped.
16. The semiconductor apparatus of claim 13 , wherein the resistor device further comprises a plurality of fourth doped layers having a second conductivity type and disposed on the substrate on two sides of the connection portion of the third doped layer.