LOW RESISTANCE CONTACT STRUCTURES FOR TRENCH STRUCTURES
An electrical device including at least one contact surface and an interlevel dielectric layer present atop the electrical device, wherein the interlevel dielectric layer includes at least one trench to the at least one contact surface of the electrical device. A conformal titanium liner is present on the sidewalls of the trench and is in direct contact with the at least one contact surface. The conformal titanium liner may be composed of 100 wt. % titanium, and may have a thickness ranging from 10 Å to 100Å.
1 . A contact comprising:
a conformal titanium liner present on the sidewalls of a trench and is in direct contact with the at least one contact surface; and
a metal fill comprising ruthenium (Ru), rhodium (Rh), iridium (Jr), osmium (Os), molybdenum (Mo), copper (Cu) or a combination thereof fills the at least one trench, and is in direct contact with the conformal titanium liner.
2 . The contact device of claim 1 , wherein the conformal titanium liner comprises 100 wt. % titanium.
3 . The contact device of claim 1 , wherein the conformal titanium liner comprises a thickness ranging from 10 Å to 100 Å.
4 . The contact device of claim 1 , wherein the contact is to a field effect transistor.
5 . The contact of claim 4 , wherein a channel region of the field effect transistor is provided by a fin structure.
6 . The contact of claim 5 , wherein the contact surface is provided by source and drain region portions of the field effect transistor that are present on portions of the fin structure at opposing sides of the channel region.
7 . The contact of claim 6 , wherein the contact surface comprises a metal semiconductor alloy region that is in direct contact with the conformal titanium liner.
8 . A contact comprising:
a conformal titanium liner of substantially 100 wt. % titanium present on sidewalls of a trench and is in direct contact with at least one contact surface; and
a metal fill comprising ruthenium (Ru), rhodium (Rh), iridium (Ir), osmium (Os), molybdenum (Mo), copper (Cu) or a combination thereof fills the at least one trench.
9 . The contact of claim 8 , wherein the conformal titanium liner comprises a thickness ranging from 10 Å to 100 Å.
10 . The contact of claim 8 , wherein the contact is to a field effect transistor.
11 . The contact of claim 10 , wherein a channel region of the field effect transistor is provided by a fin structure.
12 . The contact of claim 11 , wherein the contact surface is provided by source and drain region portions of the field effect transistor that are present on portions of the fin structure at opposing sides of the channel region.
13 . The contact of claim 12 , wherein the contact surface comprises a metal semiconductor alloy region that is in direct contact with the conformal titanium liner.
14 . A contact comprising:
a metal semiconductor alloy region that is in direct contact with at least one contact surface;
a conformal titanium liner present on the sidewalls of the trench and is in direct contact with the metal semiconductor alloy region that is atop the at least one contact surface; and
a metal fill comprising ruthenium (Ru), rhodium (Rh), iridium (Ir), osmium (Os), molybdenum (Mo), copper (Cu) or a combination thereof fills the at least one trench, and is in direct contact with the conformal titanium liner.
15 . The contact of claim 14 , wherein the conformal titanium liner comprises 100 wt. % titanium.
16 . The contact of claim 14 , wherein the conformal titanium liner comprises a thickness ranging from 10 Å to 100 Å.
17 . The contact of claim 14 , wherein the contact is to a field effect transistor.
18 . The contact of claim 17 , wherein a channel region of the field effect transistor is provided by a fin structure.
19 . The contact of claim 18 , wherein the contact surface is provided by source and drain region portions of the field effect transistor that are present on portions of the fin structure at opposing sides of the channel region.
20 . The contact of claim 14 , wherein the metal semiconductor alloy is a silicide.