Bottom-up growth of silicon oxide and silicon nitride using sequential deposition-etch-treat processing

1. A method comprising:

providing a substrate having a substrate surface with a plurality of features formed therein, each feature extending a distance from the substrate surface and having a bottom and at least one sidewall;

depositing a first film in the at least one feature so that the first film forms on the bottom of the feature and only on the upper portions of the sidewalls of the feature;

etching the first film from the sidewalls of the feature; and

treating the first film in the bottom of the feature to form a second film in the feature.

2. The method of claim 1 , wherein the first film comprises silicon.

3. The method of claim 2 , wherein the second film comprises one or more of silicon oxide, silicon nitride or silicon oxynitride.

4. The method of claim 3 , wherein depositing the first film comprises exposing the substrate surface to a silicon precursor and a reactant.

5. The method of claim 4 , wherein the silicon precursor comprises one or more of silane, disilane, trisilane, tetrasilane, a higher order silane or dichlorosilane.

6. The method of claim 5 , wherein the reactant comprises one or more of hydrogen or nitrogen.

7. The method of claim 6 , wherein the reactant comprises a plasma.

8. The method of claim 3 , wherein etching the first film from the sidewalls comprises exposing the substrate to one or more of H 2 , HCl or Cl 2 .

9. The method of claim 8 , wherein etching the first film comprises a plasma.

10. The method of claim 3 , wherein treating the first film comprises exposing the first film to one or more of Ar, He, H 2 , O 2 , N 2 O, O 3 or H 2 O to form a second film comprising silicon oxide.

11. The method of claim 10 , wherein treating the first film comprises exposing the first film to a plasma.

12. The method of claim 3 , wherein treating the first film comprises exposing the first film to one or more of Ar, He, H 2 , NH 3 , N 2 to form a second film comprising silicon nitride.

13. The method of claim 12 , wherein treating the first film comprises exposing the first film to a plasma.

14. The method of claim 1 , wherein a process temperature during deposition, etching and treatment is in the range of about 100° C. to about 500° C.

15. The method of claim 1 , further comprising repeating the deposition, etch and treatment to fill the feature with the second film.

16. The method of claim 1 , wherein the first film is deposited to a thickness in the range of about 0.01 nm to about 10 nm before etching.

17. A method comprising:

providing a substrate having a substrate surface with a plurality of features formed therein, each feature extending a distance from the substrate surface and having a bottom and at least one sidewall;

depositing a first film comprising silicon in the at least one feature so that the first film forms on the bottom of the feature and forms a mushroom shape near the top of the feature adjacent the substrate surface;

etching the first film from the sidewalls of the feature to remove the mushroom shape; and

treating the first film in the bottom of the feature to form a second film in the feature, the second film comprising one or more of silicon oxide, silicon nitride or silicon oxynitride.

18. The method of claim 17 , wherein depositing the first film comprises exposing the substrate surface to a silicon precursor comprising one or more of silane, disilane, trisilane, tetrasilane, a higher order silane or dichlorosilane and a reactant comprising a plasma comprising one or more of hydrogen or nitrogen, etching the first film from the sidewalls comprises exposing the substrate to a plasma comprising one or more of H 2 , HCl or Cl 2 , and treating the first film comprises exposing the first film to a plasma comprising one or more of Ar, He, H 2 , O 2 , N 2 O, O 3 or H 2 O to form a second film comprising silicon oxide or a plasma comprising one or more of Ar, He, H 2 , NH 3 , N 2 to form a second film comprising silicon nitride.

19. The method of claim 18 , wherein a process temperature during deposition, etching and treatment is in the range of about 100° C. to about 500° C.

20. A method comprising:

(a) providing a substrate having a substrate surface with a plurality of features formed therein, each feature extending a distance from the substrate surface and having a bottom and at least one sidewall;

(b) exposing the substrate to a silicon precursor and a reactant to deposit a first film comprising silicon in the at least one feature so that the first film forms on the bottom of the feature and on the sidewalls of the feature near the substrate surface forming a mushroom shape, the silicon precursor comprising one or more of silane, disilane, trisilane, tetrasilane, a higher order silane or dichlorosilane, the reactant comprising a plasma comprising one or more of hydrogen or nitrogen, the first film formed to a depth in the range of about 1 Å to about 50 Å;

(c) exposing the substrate to an etchant comprising a plasma comprising one or more of H 2 , HCl or Cl 2 to etch the first film from the sidewalls of the feature and remove the mushroom shape;

(d) treating the first film in the bottom of the feature to form a second film comprising one or more of silicon oxide, silicon nitride or silicon oxynitride in the feature, treating the film comprising exposing the substrate to a plasma comprising one or more of Ar, He, H 2 , O 2 , N 2 O, O 3 or H 2 O, NH 3 , N 2 ; and

(e) repeating (b) through (d) to fill the feature.