Image sensor having an N-type photodiode and a P-type photodiode

1. An image sensor including a pixel block, the pixel block comprising:

a first unit pixel including a first photodiode, a first transfer gate, and a first floating diffusion region;

a second unit pixel including a second photodiode, a second transfer gate, and a second floating diffusion region;

a third unit pixel including a third photodiode, a third transfer gate, and a third floating diffusion region; and

a fourth unit pixel including a fourth photodiode, a fourth transfer gate, and a fourth floating diffusion region,

wherein:

the first photodiode of the first unit pixel and the third photodiode of the third unit pixel are N-type photodiodes;

the second photodiode of the second unit pixel and the fourth photodiode of the fourth unit pixel are P-type photodiodes; and

the first, second, third and fourth unit pixels are spatially arranged so that at least two adjacent photodiodes are different types, and

wherein the first to fourth unit pixels are arranged in first to fourth quadrants, respectively,

the first unit pixel and the third unit pixel are arranged in a first diagonal direction, and

the second unit pixel and the fourth unit pixel are arranged in a second diagonal direction crossing the first diagonal direction,

wherein the pixel block further comprises:

an N-type driving transistor, an N-type selecting transistor, and an N-type reset transistor electrically connected to the first floating diffusion region and the third floating diffusion region, and

a P-type driving transistor, a P-type selecting transistor, and a P-type reset transistor electrically connected to the second floating diffusion region and the fourth floating diffusion region.

2. The image sensor of claim 1 , wherein the first to fourth transfer gates and the first to fourth floating diffusion regions are disposed to face a center portion of the pixel block.

3. The image sensor of claim 1 , wherein:

the first transfer gate and the third transfer gate are N-type conductors, and

the second transfer gate and the fourth gate are P-type conductors.

4. The image sensor of claim 1 , wherein:

the first floating diffusion region and the third floating diffusion region are N-type doped regions, and

the second floating diffusion region and the fourth diffusion are P-type doped regions.

5. The image sensor of claim 1 , wherein:

the first photodiode comprises a first doped bulk region and a first doped surface region,

the second photodiode comprises a second doped bulk region and a second doped surface region,

the third photodiode comprises a third doped bulk region and a third doped surface region; and

the fourth photodiode comprises a fourth doped bulk region and a fourth doped surface region,

and wherein:

the first doped bulk region and the third doped bulk region are N-type doped regions, and

the second doped bulk region and the fourth doped bulk region are P-type regions.

6. The image sensor of claim 5 , wherein:

the first doped surface region and the third doped surface region are P-type doped regions, and

the second doped surface region and the fourth doped surface region are N-type doped regions.

7. The image sensor of claim 1 , wherein:

the first floating diffusion region and the third floating diffusion region are electrically connected to each other, and

the second floating diffusion region and the fourth floating diffusion region are electrically connected to each other.

8. The image sensor of claim 1 , wherein the pixel block further comprises:

a P-type driving active region having the N-type driving transistor and the N-type selecting transistor formed therein,

a P-type reset active region having the N-type reset transistor formed therein,

an N-type driving active region having the P-type driving transistor and the P-type selecting transistor formed therein, and

an N-type reset active region having the P-type reset transistor formed therein.

9. An image sensor comprising:

a P-type substrate;

an N-well region formed in the P-type substrate;

a first N-type photodiode including a first N-type doped bulk region formed in the P-type substrate and a first P-type doped surface region on the first bulk doped region;

a first P-type photodiode including a first P-type doped bulk region formed in the N-well region and a first N-type doped surface region on the first P-type bulk doped region;

a first N-type transfer gate electrically connected to the first N-type photodiode and a first N-type floating diffusion region; and

a first P-type transfer gate electrically connected to the first P-type photodiode and a first P-type floating diffusion region.

10. The image sensor of claim 9 , wherein the first N-type floating diffusion region and the first P-type floating diffusion region are disposed relatively closer than the first N-type transfer gate and the first P-type transfer gate.

11. The image sensor of claim 9 , further comprising:

a second N-type photodiode including a second doped bulk region formed in the P-type substrate and a second P-type doped surface region on the second N-type bulk doped region;

a second P-type photodiode including a second doped bulk region formed in the N-well region in the substrate and a second N-type doped surface region on the second P-type bulk doped region;

a second N-type transfer gate electrically connected to the second N-type photodiode and a second N-type floating diffusion region; and

a second P-type transfer gate electrically connected to the second P-type photodiode formed in the N-well region and a second P-type floating diffusion region.

12. The image sensor of claim 9 , further comprising:

an N-type active region; and

a P-type driving transistor, a P-type selecting transistor, and a P-type reset transistor on the N-type active region.

13. The image sensor of claim 12 , wherein:

the N-type active region is an N-type doped region; and

the P-type driving transistor, the P-type selecting transistor, and the P-type reset transistor have P-type gate electrodes.

14. The image sensor of claim 12 , further comprising:

a P-type active region; and

an N-type driving transistor, an N-type selecting transistor, and an N-type reset transistor on the P-type active region.

15. The image sensor of claim 14 , wherein:

the P-type active region is a P-type doped region; and

the N-type driving transistor, the N-type selecting transistor, and the N-type reset transistor have N-type gate electrodes.

16. The image sensor of claim 14 , wherein:

the P-type active region, the N-type driving transistor, the N-type selecting transistor, and the N-type reset transistor are electrically connected to the first N-type floating diffusion region; and

the N-type active region, the P-type driving transistor, the P-type selecting transistor, and the P-type reset transistor are electrically connected to the first P-type floating diffusion region.