Optical cavity including a light emitting device and wavelength converting material
Light emitting devices are described herein. A light-emitting device includes a substrate having a surface below an optical cavity, one or more light emitting diodes (LEDs) disposed above the surface of the substrate, a first wavelength-converting layer, and a second wavelength-converting layer. The first wavelength-converting layer is disposed on the surface of the substrate below the optical cavity, covers the entire surface of the substrate except for portions of the surface of the substrate that are situated underneath any of the one or more LEDs, and has a thickness that is equal to or less than a thickness of at least one of the one or more LEDs. The second wavelength-converting layer is disposed above the optical cavity.
1. A light-emitting device, comprising:
one or more light emitting diodes (LEDs) disposed on a surface of a substrate;
a first wavelength-converting layer disposed on the surface of the substrate, the first wavelength-converting layer covering the entire surface of the substrate except for portions of the surface of the substrate that are situated underneath any of the one or more LEDs, and the first wavelength-converting layer having a thickness that is equal to or less than a thickness of at least one of the one or more LEDs;
a second wavelength-converting layer disposed above the one or more LEDs and the first wavelength-converting layer; and
an optical cavity between the first and second wavelength-converting layers.
2. The light-emitting device of claim 1 , wherein the thickness of the first wavelength-converting layer is between 0.5 μm and 500 μm.
3. The light-emitting device of claim 1 , wherein the thickness of the first wavelength-converting layer is between 0.5 μm and 1 mm.
4. The light-emitting device of claim 1 , wherein the first wavelength-converting layer and the second wavelength-converting layer are configured to emit different colors of light.
5. The light-emitting device of claim 1 , wherein the first wavelength-converting layer is configured to transmit some of light incident on the first wavelength-converting layer toward the substrate and transmit at least a portion of light that is reflected off the substrate back toward the second wavelength-converting layer.
6. The light-emitting device of claim 1 , wherein the first wavelength-converting layer is configured to prevent any light that is incident on the first wavelength-converting layer from reaching the substrate.
7. The light-emitting device of claim 1 , further comprising a filter formed above the second wavelength-converting layer that is configured to transmit a portion of unconverted light that is emitted from the one or more LEDs while reflecting another portion of the unconverted light towards the first wavelength-converting layer, wherein the filter is the layer.
8. The light-emitting device of claim 1 , wherein the surface of the substrate is a reflective surface.
9. The light-emitting device of claim 1 , comprising a scattering layer disposed above the second wavelength-converting layer.
10. A light-emitting device, comprising:
one or more light emitting diodes (LEDs) disposed on a surface of a substrate;
a first wavelength-converting layer disposed on the surface of the substrate, the first wavelength-converting layer covering the entire surface of the substrate except for portions of the surface of the substrate that are situated underneath any of the one or more LEDs, the first wavelength-converting layer having a thickness that is equal to or less than a thickness of any of the one or more LEDs, and the first wavelength-converting layer being formed of a plurality of wavelength-converting materials disposed in different regions of the first wavelength-converting layer;
a second wavelength-converting layer disposed above the one or more LEDs and the first wavelength-converting layer; and
an optical cavity between the first and second wavelength-converting layers.
11. The light-emitting device of claim 10 , wherein the thickness of the first wavelength-converting layer is between 0.5 μm and 500 μm.
12. The light-emitting device of claim 10 , wherein the thickness of the first wavelength-converting layer is between 0.5 μm and 1 mm.
13. The light-emitting device of claim 10 , wherein each of the wavelength converting materials in the plurality is configured to emit a different color of light.
14. The light-emitting device of claim 10 , wherein the first wavelength-converting layer is configured to transmit some of light incident on the first wavelength-converting layer toward the substrate and transmit at least a portion of light that is reflected off the substrate back toward the second wavelength-converting layer.
15. The light-emitting device of claim 10 , wherein the first wavelength-converting layer is configured to prevent any light that is incident on the first wavelength-converting layer from reaching the substrate.