Multiple patterning scheme integration with planarized cut patterning
A method for fabricating a semiconductor device integrating a multiple patterning scheme includes forming a plurality of mandrels from a base structure, forming a plurality of non-mandrels including a hard mask material having an etch property substantially similar to that of the plurality of mandrels, forming photo-sensitive material or a memorization layer over the plurality of mandrels and the plurality of non-mandrels, and applying an exposure scheme to the photo-sensitive material or the memorization layer to create at least one mandrel cut pattern and at least one non-mandrel cut pattern.
1. A method for fabricating a semiconductor device integrating a multiple patterning scheme, comprising:
forming a plurality of mandrels from a base structure;
forming a plurality of non-mandrels, including:
etching back a spacer layer to form gaps between the plurality of mandrels:
forming hard mask material in the gaps having an etch property substantially similar to that of the plurality of mandrels; and
etching back the hard mask material to form the plurality of non-mandrels;
forming photo-sensitive material over the plurality of mandrels and the plurality of non-mandrels; and
applying an exposure scheme to the photo-sensitive material to create at least one mandrel cut pattern and at least one non-mandrel cut pattern.
2. The method of claim 1 , wherein the hard mask material includes spin-on-glass (SOG) or spin-on-carbon (SOC).
3. The method of claim 2 , wherein the SOG includes a silicon-based SOG material.
4. The method of claim 1 , wherein the exposure scheme is a single exposure scheme to simultaneously create the mandrel and non-mandrel cut patterns.
5. The method of claim 1 , wherein the exposure scheme is a double exposure scheme.
6. The method of claim 5 , wherein applying the double exposure scheme to the photo-sensitive material further includes:
performing a first lithography exposure to create the at least one mandrel cut pattern; and
performing a second lithography exposure to create the at least one non-mandrel cut pattern.
7. The method of claim 1 , wherein the base structure includes a metal cap layer, a first dielectric layer formed on the metal cap layer, a hard mask layer formed on the IMD layer, and a second dielectric layer formed on the hard mask layer, and wherein the plurality of mandrels include material from the second dielectric layer.
8. The method of claim 7 , further comprising:
removing mandrels and non-mandrels not covered by the mandrel and non-mandrel cut patterns;
removing the mandrel and non-mandrel cut pattern;
removing exposed portions of the hard mask layer; and
removing exposed portions of the first dielectric layer.
9. A method for fabricating a semiconductor device integrating a multiple patterning scheme, comprising:
forming a plurality of mandrels from a base structure;
forming a plurality of non-mandrels including hard mask material having an etch property substantially similar to that of the plurality of mandrels;
forming photo-sensitive material over the plurality of mandrels and the plurality of non-mandrels; and
applying a double exposure scheme to the photo-sensitive material to create at least one mandrel cut pattern and at least one non-mandrel cut pattern, including performing a first lithography exposure to create the at least one mandrel cut pattern, and performing a second lithography exposure to create the at least one non-mandrel cut pattern.
10. The method of claim 9 , further comprising:
forming a spacer layer;
performing an etch back of the spacer layer to create gaps between the mandrels;
forming the hard mask material in the gaps; and
performing an etch back to form the plurality of non-mandrels.
11. The method of claim 9 , wherein the hard mask material includes spin-on-glass (SOG) or spin-on-carbon (SOC).
12. The method of claim 9 , wherein the exposure scheme is a single exposure scheme to simultaneously create the mandrel and non-mandrel cut patterns.
13. The method of claim 9 , wherein the base structure includes a metal cap layer, a first dielectric layer formed on the metal cap layer, a hard mask layer formed on the IMD layer, and a second dielectric layer is formed on the hard mask layer, and wherein the mandrels include material from the second dielectric layer.
14. The method of claim 13 , further comprising:
removing mandrels and non-mandrels not covered by the mandrel and non-mandrel cut patterns;
removing the mandrel and non-mandrel cut pattern;
removing exposed portions of the hard mask layer; and
removing exposed portions of the first dielectric layer.
15. A method for fabricating a semiconductor device integrating a multiple patterning scheme, comprising:
forming a plurality of mandrels from a base structure, the base structure including a metal cap layer, a first dielectric layer formed on the metal cap layer, a hard mask layer formed on the IMD layer, and a second dielectric layer is formed on the hard mask layer, and wherein the mandrels include material from the second dielectric layer;
forming a plurality of non-mandrels including hard mask material having an etch property substantially similar to that of the plurality of mandrels;
forming photo-sensitive material over the plurality of mandrels and the plurality of non-mandrels; and
applying an exposure scheme to the photo-sensitive material to create at least one mandrel cut pattern and at least one non-mandrel cut pattern.
16. The method of claim 15 , further comprising:
forming a spacer layer;
performing an etch back of the spacer layer to create gaps between the mandrels;
forming the hard mask material in the gaps; and
performing an etch back to form the plurality of non-mandrels.
17. The method of claim 15 , wherein the hard mask material includes spin-on-glass (SOG) or spin-on-carbon (SOC).
18. The method of claim 15 , wherein the exposure scheme is a single exposure scheme to simultaneously create the mandrel and non-mandrel cut patterns.
19. The method of claim 15 , wherein the exposure scheme is a double exposure scheme, and wherein applying the double exposure scheme to the photo-sensitive material further includes:
performing a first lithography exposure to create the at least one mandrel cut pattern; and
performing a second lithography exposure to create the at least one non-mandrel cut pattern.
20. The method of claim 15 , further comprising:
removing mandrels and non-mandrels not covered by the mandrel and non-mandrel cut patterns;
removing the mandrel and non-mandrel cut pattern;
removing exposed portions of the hard mask layer; and
removing exposed portions of the first dielectric layer.