Ultraviolet light emitting devices having a dielectric layer and a transparent electrode layer disposed in between patterned nitride semiconductor layers

1. An ultraviolet light emitting device, comprising:

a first conductivity-type AlGaN semiconductor layer;

an active layer disposed on the first conductivity-type AlGaN semiconductor layer and having an AlGaN semiconductor;

a second conductivity-type AlGaN semiconductor layer disposed on the active layer and having an upper surface divided into a first region and a second region;

second conductivity-type nitride patterns disposed on the first region of the second conductivity-type AlGaN semiconductor layer and having an energy band gap that is smaller than an energy band gap of the second conductivity-type AlGaN semiconductor layer;

a transparent electrode layer covering the second conductivity-type nitride patterns and the second region of the second conductivity-type AlGaN semiconductor layer;

a light-transmissive dielectric layer disposed on the transparent electrode layer between the second conductivity-type nitride patterns; and

a metal electrode disposed on the transparent electrode layer overlying the second conductivity type nitride patterns and on the light-transmissive dielectric layer.

2. The ultraviolet light emitting device as claimed in claim 1 , wherein the active layer is formed such that a plurality of quantum well layers formed of Al x1 Ga 1-x1 N, in which 0<x1<1, and a plurality of quantum barrier layers formed of Al x2 Ga 1-x2 N, in which x1<x2<1, are alternately stacked.

3. The ultraviolet light emitting device as claimed in claim 1 , wherein at least one of the first conductivity-type AlGaN semiconductor layer and the second conductivity-type AlGaN semiconductor layer has an energy band gap that is greater than an energy band gap of the AlGaN semiconductor of the active layer.

4. The ultraviolet light emitting device as claimed in claim 1 , wherein the active layer is configured to emit light having a wavelength of 210 nm to 315 nm.

5. The ultraviolet light emitting device as claimed in claim 1 , further comprising an electron blocking layer disposed between the second conductivity-type semiconductor layer and the active layer, the electron blocking layer being formed of an AlGaN semiconductor having an Al composition ratio that is greater than an Al composition ratio of the second conductivity-type AlGaN semiconductor layer.

6. The ultraviolet light emitting device as claimed in claim 1 , wherein the second conductivity-type nitride patterns include a second conductivity-type GaN.

7. The ultraviolet light emitting device as claimed in claim 1 , wherein the transparent electrode layer includes ITO, ZITO, ZIGO, GIO, ZTO, FTO, AZO, GZO, In 4 Sn 3 O 12 , or Zn (1-x) Mg x O, in which 0≤x≤1.

8. The ultraviolet light emitting device as claimed in claim 1 , wherein:

the transparent electrode layer includes ITO, and

the transparent electrode layer has a thickness of 1 nm to 50 nm.

9. The ultraviolet light emitting device as claimed in claim 1 , wherein the light-transmissive dielectric layer includes SiO 2 , SiN, TiO 2 , HfO, or MgF 2 .

10. The ultraviolet light emitting device as claimed in claim 1 , wherein the metal electrode includes Al, Rh, or Ru.

11. The ultraviolet light emitting device as claimed in claim 1 , wherein the light-transmissive dielectric layer and the metal electrode constitute an omnidirectional reflector.

12. An ultraviolet light emitting device, comprising:

a light-emitting laminate including a first conductivity-type semiconductor layer including a Al x1 Ga 1-x1 N semiconductor, in which 0<x1<1, a second conductivity-type semiconductor layer including a Al x2 Ga 1-x2 N semiconductor, in which 0<x2<1, and an active layer disposed between the first and second conductivity-type semiconductor layers and including a Al x3 Ga 1-x3 N semiconductor, in which 0<x3<x1 and 0<x3<x2;

second conductivity-type nitride patterns partially disposed on the second conductivity-type semiconductor layer and including a Al x4 Ga 1-x4 N semiconductor, in which 0<x4<x2;

a transparent electrode layer disposed on upper surfaces of the second conductivity-type nitride patterns;

a light-transmissive dielectric layer disposed on a region of the second conductivity-type semiconductor layer that is between the second conductivity-type nitride patterns; and

a metal electrode disposed on the transparent electrode layer and the light-transmissive dielectric layer.

13. The ultraviolet light emitting device as claimed in claim 12 , wherein the transparent electrode layer extends onto the region of the second conductivity-type semiconductor layer between the second conductivity-type nitride patterns.

14. The ultraviolet light emitting device as claimed in claim 13 , wherein:

the transparent electrode layer includes ITO, and

the transparent electrode layer has a thickness of 1 nm to 50 nm.

15. The ultraviolet light emitting device as claimed in claim 12 , wherein the light-transmissive dielectric layer and the metal electrode constitute an omnidirectional reflector.

16. The ultraviolet light emitting device as claimed in claim 15 , wherein:

the light-transmissive dielectric layer includes SiO 2 , SiN, TiO 2 , HfO, or MgF 2 , and

the metal electrode includes Al, Rh, or Ru.

17. The ultraviolet light emitting device as claimed in claim 12 , wherein:

an upper surface of the light-transmissive dielectric layer is farther from the second conductivity-type semiconductor layer than the upper surfaces of the second conductivity-type nitride patterns, and

the upper surface of the light-transmissive dielectric layer is closer to the second conductivity-type semiconductor layer than an upper surface of the transparent electrode layer.

18. The ultraviolet light emitting device as claimed in claim 12 , wherein:

the transparent electrode layer includes ITO, and

the transparent electrode layer has a thickness of 1 nm or more.

19. The ultraviolet light emitting device as claimed in claim 12 , wherein:

an Al composition ratio x2 of the second conductivity-type semiconductor layer is in a range of 0.40 to 1.0, and

an Al composition ratio x3 of the second conductivity-type nitride patterns is 0.2 or less.

20. An ultraviolet light emitting device, comprising:

a first conductivity-type AlGaN semiconductor layer;

an active layer disposed on the first conductivity-type AlGaN semiconductor layer and having an AlGaN semiconductor;

a second conductivity-type AlGaN semiconductor layer disposed on the active layer and having an upper surface divided into a first region and a second region;

second conductivity-type nitride patterns partially formed on the second conductivity-type semiconductor layer and including a GaN semiconductor;

an ITO layer disposed at least on upper surfaces of the second conductivity-type nitride patterns;

a light-transmissive dielectric layer disposed on the second conductivity-type semiconductor layer between the second conductivity-type nitride patterns; and

a metal electrode disposed on regions of the transparent electrode layer overlying the second conductivity type nitride patterns and on the light-transmissive dielectric layer.