Backside illumination image sensors
Implementations of image sensor devices may include a through-silicon-via (TSV) formed in a backside of an image sensor device and extending through a material of a die to a metal landing pad. The metal landing pad may be within a contact layer. The devices may include a TSV edge seal ring surrounding a portion of the TSV in the contact layer and extending from a first surface of the contact layer into the contact layer to a depth coextensive with a depth of the TSV.
1. An image sensor device comprising:
a first through-silicon-via (TSV) formed in an image sensor device extending from the backside of the image sensor device into a material of a die to a contact layer;
a second TSV formed within the first TSV and extending into the material of the die to a metal landing pad, wherein the metal landing pad is within the contact layer; and
a TSV edge seal ring within the contact layer surrounding the second TSV in the contact layer and extending from a first surface of the contact layer into the contact layer to a depth coextensive with a depth of the second TSV.
2. The image sensor device of claim 1 , wherein the TSV edge seal ring comprises tungsten.
3. The image sensor device of claim 1 , wherein the TSV edge seal ring is directly coupled to the metal landing pad.
4. The image sensor device of claim 1 , wherein the TSV edge seal ring is physically isolated from the metal landing pad.
5. The image sensor device of claim 1 , further comprising a pinning layer directly coupled to one or more sidewalls of the first TSV.
6. The image sensor device of claim 1 , further comprising an anti-reflective layer coupled to one or more sidewalls of the first TSV.
7. The image sensor device of claim 1 , wherein a perimeter of the TSV edge seal ring is aligned with a perimeter of the first TSV.
8. The image sensor device of claim 1 , wherein a perimeter of the TSV edge seal ring is larger than a perimeter of the first TSV.
9. The image sensor device of claim 1 , wherein a perimeter of the TSV edge seal ring is smaller than a perimeter of the first TSV.
10. The image sensor device of claim 1 , wherein the TSV edge seal ring is directly coupled to a diffusion barrier layer.
11. The image sensor device of claim 1 , wherein the TSV edge seal ring is directly coupled to one or more shallow-trench-isolation (STI) regions.