Backside stealth dicing through tape followed by front side laser ablation dicing process
View Patent ↗A method of forming a plurality of semiconductor devices includes applying a tape material to a back side of a semiconductor device having a silicon layer on the back side and a circuitry layer on the front side, lasing with an infrared laser the silicon layer through the tape material, lasing with a second laser the circuitry layer, and expanding the tape material for form a plurality of semiconductor devices. The second layer may be an ultraviolet laser. The lasers may be irradiated in a pattern on the bottom side and the top side. The second layer may form a groove in the circuitry layer that does not penetrate the silicon layer. The infrared laser may cleave a portion of the silicon lattice of the silicon layer. A coating may be applied to the circuitry layer prior to being irradiated with the second laser.
1. A method of forming a plurality of semiconductor devices comprising:
cleaving at least a portion of a silicon lattice of a silicon layer of a semiconductor device by applying in a pattern a first laser to the semiconductor device;
cutting a groove in a circuitry layer of the semiconductor device by applying in the pattern a second laser to the semiconductor device; and
applying an expansion force to a tape material on a back surface of the semiconductor device, wherein a plurality of semiconductor devices are formed from the semiconductor device in accordance with the pattern, wherein the circuitry layer has a first thickness and the groove in circuitry layer has a second thickness that is less than the first thickness.
2. The method of claim 1 , further comprising:
wherein the first laser is applied through the tape on the back surface of the semiconductor and wherein the second laser is applied after the first laser.
3. The method of claim 2 , wherein the first laser has a focal point substantially in a middle portion of the silicon layer.