Glass substrate, laminated substrate, laminate, and method for producing semiconductor package
A glass substrate includes, as a glass matrix composition as represented by mole percentage based on oxides, SiO 2 : 55%-75%, Al 2 O 3 : 2%-15%, MgO: 0%-10%, CaO: 0%-10%, SrO: 0%-10%, BaO: 0%-15%, ZrO 2 : 0%-5%, Na 2 O: 0%-20%, K 2 O: 5%-30%, and Li 2 O: 0%-5.0%. The glass substrate has a total content of alkali metal oxides, as represented by mole percentage based on oxides, of 10%-30%, a value obtained by dividing the total content of alkali metal oxides by the content of SiO 2 of 0.50 or smaller, a value obtained by dividing the content of Na 2 O by a value obtained by subtracting the content of Al 2 O 3 from a total content of Na 2 O and K 2 O of 0.90 or smaller, and an average coefficient of thermal expansion α1 at 50° C.-350° C. of 11 ppm/° C.-16 ppm/° C.
1. A glass substrate comprising, as a glass matrix composition as represented by mole percentage based on oxides,
from 55% to 75% of SiO 2 ,
from 2% to 15% of Al 2 O 3 ,
from 0% to 10% of MgO,
from 0% to 10% of CaO,
from 0.5% to 10% of SrO,
from 0% to 15% of BaO,
from 0% to 5% of ZrO 2 ,
from 0% to 20% of Na 2 O,
from 5% to 30% of K 2 O, and
from 0% to 5% of Li 2 O,
wherein:
a total content of alkali metal oxides (R 2 O), as represented by mole percentage based on oxides, is from 10% to 23%;
a total content of MgO, CaO, SrO, and BaO is from 4% to 20%;
a value obtained by dividing a total content of alkali metal oxides by the content of SiO 2 of 0.50 or smaller;
a value obtained by dividing the content of Na 2 O by a value obtained by subtracting the content of Al 2 O 3 from a total content of Na 2 O and K 2 O of 0.90 or smaller; and
an average coefficient of thermal expansion α 1 at 50° C. to 350° C. of from 11 ppm/° C. to 16 ppm/° C., and
wherein the glass substrate contains substantially no ZnO.
2. The glass substrate according to claim 1 , which has a value determined by the following expression (1) which represents a relationship among the contents of oxides of from 110 to 160:
0.507×(content of SiO 2 )−1.112×(content of Al 2 O 3 )+0.709×(content of MgO)+0.534×(content of CaO)−0.108×(content of SrO)+1.832×(content of BaO)+4.083×(content of Na 2 O)+4.449×(content of K 2 O)−4.532×(content of ZrO 2 ) (1).
3. The glass substrate according to claim 1 , which has a value determined by the following expression (1) which represents a relationship among the contents of oxides of from 100 to 150:
1.135×(content of SiO 2 )−0.741×(content of Al 2 O 3 )+2.080×(content of MgO)+0.293×(content of CaO)−1.307×(content of SrO)+1.242×(content of BaO)+2.056×(content of Na 2 O)+2.464×(content of K 2 O)−2.982×(content of ZrO 2 ) (2).
4. The glass substrate according to claim 1 , which has a content of Fe 2 O 3 , as represented by mass per million based on oxides, of 1,000 ppm or less.
5. The glass substrate according to claim 1 , having a Knoop hardness of 500 or less.
6. The glass substrate of claim 1 , having a Knoop hardness of 500 or less; wherein the glass substrate is a supporting substrate for semiconductor packages.
7. The glass substrate according to claim 1 , having a photoelastic constant C of from 10 to 26 nm/cm/MPa.
8. The glass substrate of claim 1 , having a photoelastic constant C of from 10 to 26 nm/cm/MPa; wherein the glass substrate is a supporting substrate for semiconductor packages.
9. The glass substrate according to claim 1 , having an average coefficient of thermal expansion α 2 at 30° C. to 220° C. of from 10 ppm/° C. to 15 ppm/° C.
10. The glass substrate according to claim 1 , which has a devitrification temperature lower than 1,150° C.
11. The glass substrate according to claim 1 , which has a Young's modulus of 60 GPa or higher.
12. The glass substrate according to claim 1 , which has a β-OH of from 0.05 to 0.65 mm −1 .
13. The glass substrate according to claim 1 , which is a supporting substrate for semiconductor packages.
14. The glass substrate according to claim 1 , which is a glass substrate for fan-out type wafer-level packages, a cap material for high-frequency filters, or a support glass for semiconductor back grinding.
15. A laminated substrate comprising:
the glass substrate according to claim 1 and
an element substrate comprising semiconductor chips embedded in an encapsulating material, wherein the element substrate is laminated on the glass substrate.
16. A laminate comprising:
the glass substrate of claim 1 and
another glass substrate laminated on the glass substrate of claim 1 .
17. A process for production of a semiconductor package, the process comprising:
forming an element substrate comprising a plurality of semiconductor chips embedded in an encapsulating material is formed over a first supporting substrate, thereby forming a first laminated substrate;
separating the first laminated substrate into the first supporting substrate and the element substrate;
laminating the element substrate separated from the first supporting substrate to a second supporting substrate, thereby forming a second laminated substrate;
forming a wiring line on a surface of the element substrate on a side opposite to the second supporting substrate;
separating the second laminated substrate into the second supporting substrate and the element substrate having the wiring line; and
dividing the element substrate separated from the second supporting substrate into chips respectively the plurality of semiconductor chips of the element substrate,
wherein the first supporting substrate, the second supporting substrate, or a combination thereof is/are the glass substrate of claim 1 .
18. A glass substrate comprising, as represented by mole percentage based on oxides, from 55% to 75% of SiO 2 , from 5% to 30% of K 2 O, and from 0% to 5% of Li 2 O;
wherein
a value obtained by dividing an Na 2 O content by a value obtained by subtracting an Al 2 O 3 content from a total content of Na 2 O and K 2 O is 0.90 or smaller; and
an average coefficient of thermal expansion al at 50° C. to 350° C. is from 12.0 ppm/° C. to 16 ppm/° C., and
the glass substrate is a supporting substrate for semiconductor packages, and
wherein the glass substrate contains substantially no ZnO.
19. The glass substrate according to claim 18 , comprising, as a glass matrix composition as represented by mole percentage based on oxides,
from 55% to 75% of SiO 2 ,
from 2% to 15% of Al 2 O 3 ,
from 0% to 10% of MgO,
from 0% to 10% of CaO,
from 0.5% to 10% of SrO,
from 0% to 15% of BaO,
from 0% to 5% of ZrO 2 ,
from 0% to 20% of Na 2 O,
from 5% to 30% of K 2 O, and
from 0% to 5% of Li 2 O.
20. The glass substrate according to claim 18 , having a total content of alkali metal oxides (R 2 O), as represented by mole percentage based on oxides, of from 10% to 23%.
21. The glass substrate according to claim 18 , having a value obtained by dividing a total content of alkali metal oxides by the content of SiO 2 of 0.50 or smaller.
22. The glass substrate according to claim 18 , wherein the glass substrate is a supporting substrate for semiconductor packages.