Semiconductor device
Disclosed is a semiconductor device suppressed in decrease of reliability. The semiconductor device comprises an electrode pad portion ( 2 ) formed on the upper surface of a semiconductor substrate ( 1 ), a passivation layer ( 3 ) so formed on the upper surface of the semiconductor substrate ( 1 ) as to overlap a part of the electrode pad portion ( 2 ) and having a first opening portion ( 3 a ) where the upper surface of the electrode pad portion ( 2 ) is exposed, a barrier metal layer ( 5 ) formed on the electrode pad portion ( 2 ), and a solder bump ( 6 ) formed on the barrier metal layer ( 5 ). The barrier metal layer ( 5 ) is formed such that an outer peripheral end ( 5 b ) lies within the first opening portion ( 3 a ) of the passivation layer ( 3 ) when viewed in plan.
1. A semiconductor device comprising:
a semiconductor chip including:
an electrode pad portion on a face of a substrate;
a first protection layer including a first opening through which a top face of the electrode pad portion is exposed, the first protection layer disposed on the face of the substrate and overlapping part of the electrode pad portion;
a barrier metal layer on the electrode pad portion;
a second protection layer covering a region on the first protection layer and a region on the electrode par portion; and
a plurality of bump electrodes on the barrier metal layer;
a circuit board on which the semiconductor chip is mounted, the circuit board having, formed on a first face thereof facing the semiconductor chip, a connection pad portion connected to the bump electrodes;
a plurality of electrode terminals formed on a second face of the circuit board facing away from the semiconductor chip, the electrode terminals being electrically connected to the connection pad portion; and
a resin member filling a gap between the semiconductor chip and the circuit board,
wherein the barrier metal layer has a circumferential end part thereof formed inward of the first opening in the first protection layer as seen in a plan view,
wherein the electrode pad portion is rectangular as seen in a plan view;
wherein
a peripheral part of the barrier metal layer lies on the second protection layer, and
an upper surface and a lower surface of the barrier metal layer have a curved shape extending along the second protection layer so that a center point of a curvature of the curved shape as seen in a sectional view is located on a substrate side of the curved shape, and
wherein
the second protection layer is formed of polyimide,
the second protection layer has a second opening through which the top face of the electrode pad portion is exposed and which has an opening width smaller than the first opening,
a thickness of the second protection layer as seen in a sectional view increases gradually from a rim part of the second opening to the peripheral part of the barrier metal layer,
wherein
the bump electrodes are arrayed on a third face of the semiconductor chip facing the circuit board,
the electrode terminals are arrayed on the second face of the circuit board, and
an interval between adjacent ones of the electrode terminals on the second face is larger than an interval between adjacent ones of the bump electrodes on the third face, and
wherein the resin member covers the third face of the semiconductor chip and a part of a side face of the semiconductor chip neighboring the third face.