Methods of forming silicon oxide layer and semiconductor structure
Methods of forming a silicon oxide layer and a semiconductor structure are disclosed. The method of forming the silicon oxide layer includes the following steps. A silicon-containing precursor, an oxygen-containing precursor and an oxygen radical are provided to form a silicon oxide layer containing water. A thermal process is performed on the silicon oxide layer to diffuse the water into the silicon oxide layer and oxidize the silicon oxide layer by using the water as oxidizer.
1. A method of forming a silicon oxide layer, comprising:
performing at least one deposition cycle, comprising:
consistently providing a silicon-containing precursor and an oxygen radical to deposit a flowable silicon oxide layer; and
periodically providing an oxygen-containing precursor and increasing amount of the oxygen radical to form water in the flowable silicon oxide layer; and
performing a thermal process on the flowable silicon oxide layer to diffuse the water into the flowable silicon oxide layer to substantially disperse and insert the water throughout the flowable silicon oxide layer and oxidize the flowable silicon oxide layer by using the water as oxidizer.
2. The method of claim 1 , wherein an idle time period is between the deposition cycles, and during the idle time period, the silicon-containing precursor, the oxygen radical and the oxygen-containing precursor are ceased to provide.
3. The method of claim 1 , wherein an amount of the silicon-containing precursor is constant during the deposition cycle.
4. The method of claim 1 , wherein the oxygen radical is generated from an oxygen-containing gas.
5. The method of claim 1 , wherein the water is formed while the flowable silicon oxide layer is deposited.
6. The method of claim 1 , wherein the silicon-containing precursor comprises Si or N as a central atom or an N—Si—N backbone.
7. The method of claim 1 , wherein the oxygen-containing precursor comprises oxysilane or alkoxysilane.
8. The method of claim 1 , wherein the flowable silicon oxide layer is formed by a flowable chemical vapor deposition process.
9. A method of forming a silicon oxide layer, comprising:
providing a silicon-containing precursor and an oxygen radical to deposit a flowable silicon oxide layer;
providing an oxygen-containing precursor and increasing amount of the oxygen radical to form water in the flowable silicon oxide layer; and
homogeneously diffusing the water into the flowable silicon oxide layer to disperse the water throughout the flowable silicon oxide layer.
10. The method of claim 9 , wherein the silicon-containing precursor comprises Si or N as a central atom or an N—Si—N backbone.
11. The method of claim 9 , wherein the oxygen-containing precursor comprises hydrogen.
12. The method of claim 9 , wherein the oxygen-containing precursor comprises oxysilane or alkoxysilane.
13. The method of claim 9 , wherein the oxygen-containing precursor is free of nitrogen.
14. The method of claim 9 , wherein diffusing the water into the flowable silicon oxide layer comprises performing an annealing process, a curing process or a combination thereof.
15. A method of forming a semiconductor structure, comprising:
filling an opening with a silicon oxide layer, wherein a method of forming the silicon oxide layer comprising:
performing at least one deposition cycle, comprising:
consistently providing a silicon-containing precursor and an oxygen radical to deposit a flowable silicon oxide layer; and
periodically providing an oxygen-containing precursor and increasing amount of the oxygen radical to form water in the flowable silicon oxide layer; and
performing a thermal process on the flowable silicon oxide layer to homogeneously diffuse the water into the flowable silicon oxide layer to disperse the water throughout the flowable silicon oxide layer and oxidize the flowable silicon oxide layer by using the water as oxidizer.
16. The method of claim 15 , wherein the silicon-containing precursor comprises Si or N as a central atom or an N—Si—N backbone.
17. The method of claim 15 , wherein the oxygen-containing precursor comprises oxysilane or alkoxysilane.
18. The method of claim 15 , wherein the oxygen-containing precursor is free of nitrogen.
19. The method of claim 15 , wherein the flowable silicon oxide layer is deposited by a flowable chemical vapor deposition process.
20. The method of claim 15 , wherein the semiconductor structure is a shallow trench isolation or an inter-layer dielectric.