Programming memories with stepped programming pulses

1. A method of operating a memory device, comprising:

applying a programming pulse to an access line coupled to control gates of a plurality of memory cells, wherein the programming pulse comprises a plurality of different voltage levels;

enabling a particular memory cell of the plurality of memory cells for programming while the programming pulse has a particular voltage level of the plurality of different voltage levels, wherein the particular voltage level is configured to increase a threshold voltage of the particular memory cell when enabled for programming; and

after enabling the particular memory cell for programming, inhibiting the particular memory cell from programming while the programming pulse has a second voltage level of the plurality of different voltage levels, different than the particular voltage level.

2. The method of claim 1 , further comprising enabling a different memory cell for programming while the programming pulse has the second voltage level, wherein the second voltage level is configured to increase a threshold voltage of the different memory cell when enabled for programming.

3. The method of claim 2 , further comprising inhibiting the different memory cell from programming while the programming pulse has the particular voltage level.

4. The method of claim 1 , wherein inhibiting the particular memory cell from programming while the programming pulse has the second voltage level comprises inhibiting the particular memory cell from programming while the programming pulse has a voltage level lower than the particular voltage level.

5. The method of claim 1 , further comprising:

enabling a different memory cell of the plurality of memory cells for programming while the programming pulse has the particular voltage level, wherein the particular voltage level is configured to increase a threshold voltage of the third memory cell when enabled for programming;

wherein the particular memory cell has a particular target programmed data state corresponding to a particular range of threshold voltages; and

wherein the different memory cell has a different target programmed data state corresponding to a different range of threshold voltages than the particular range of threshold voltages.

6. The method of claim 5 , further comprising:

after applying the programming pulse, verifying whether the particular memory cell and the different memory cell have reached their respective target programmed data states;

wherein the different range of threshold voltages is lower than the particular range of threshold voltages.

7. The method of claim 1 , wherein applying the programming pulse comprising the plurality of different voltage levels comprises applying the programming pulse comprising a number of different voltage levels less than or equal to a number of possible target programmed data states to which the memory device is configured to program a memory cell of the plurality of memory cells while applying the programming pulse.

8. The method of claim 1 , further comprising enabling any memory cell of the plurality of memory cells for programming during only one voltage level of the plurality of different voltage levels of the programming pulse.

9. The method of claim 8 , further comprising inhibiting at least one memory cell of the plurality of memory cells from programming during each voltage level of the plurality of different voltage levels of the programming pulse.

10. The method of claim 1 , further comprising:

enabling a different memory cell of the plurality of memory cells for programming while the programming pulse has the second voltage level, wherein the second voltage level is configured to increase a threshold voltage of the different memory cell when enabled for programming.

11. The method of claim 10 , further comprising:

after enabling the different memory cell for programming, inhibiting the different memory cell from programming while the programming pulse has a third voltage level of the plurality of different voltage levels, different than the particular voltage level and different than the second voltage level; and

enabling a third memory cell of the plurality of memory cells for programming while the programming pulse has the third voltage level, wherein the third voltage level is configured to increase a threshold voltage of the third memory cell when enabled for programming.

12. A method of operating a memory device, comprising:

applying a programming pulse to an access line coupled to control gates of a plurality of memory cells, wherein the programming pulse comprises a plurality of different voltage levels;

enabling a particular memory cell of the plurality of memory cells for programming while the programming pulse has a particular voltage level of the plurality of different voltage levels, wherein the particular voltage level is configured to increase a threshold voltage of the particular memory cell when enabled for programming; and

inhibiting a different memory cell of the plurality of memory cells from programming while the programming pulse has the particular voltage level, and enabling the different memory cell for programming while the programming pulse has a second voltage level of the plurality of different voltage levels, wherein the second voltage level is lower than the particular voltage level, and wherein the second voltage level is configured to increase a threshold voltage of the different memory cell when enabled for programming.

13. The method of claim 12 , further comprising:

enabling a third memory cell of the plurality of memory cells for programming while the programming pulse has the particular voltage level, wherein the particular voltage level is configured to increase a threshold voltage of the third memory cell when enabled for programming;

wherein the particular memory cell has a particular target data state corresponding to a particular range of threshold voltages; and

wherein the third memory cell has a different target data state corresponding to a different range of threshold voltages than the particular range of threshold voltages.

14. The method of claim 12 , further comprising:

inhibiting a third memory cell of the plurality of memory cells from programming while the programming pulse has the particular voltage level and while the programming pulse has the second voltage level, and enabling the third memory cell for programming while the programming pulse has a third voltage level of the plurality of different voltage levels, wherein the third voltage level is different than the particular voltage level and different than the second voltage level, and wherein the third voltage level is configured to increase a threshold voltage of the third memory cell when enabled for programming.

15. The method of claim 12 , wherein applying the programming pulse to the access line comprises applying the second voltage level to the access line subsequent to applying the particular voltage level to the access line.

16. A method of operating a memory device, comprising:

applying a programming pulse to an access line coupled to control gates of a plurality of memory cells, wherein the programming pulse comprises a plurality of steps, and wherein each step of the plurality of steps has a respective voltage level of a plurality of different voltage levels;

enabling a particular memory cell of the plurality of memory cells for programming during a particular step of the plurality of steps of the programming pulse, wherein the respective voltage level of the particular step of the programming pulse is configured to increase a threshold voltage of the particular memory cell when enabled for programming; and

inhibiting a different memory cell of the plurality of memory cells from programming during the particular step of the programming pulse, and enabling the different memory cell for programming during a subsequent step of the plurality of steps of the programming pulse, wherein the respective voltage level of the subsequent step of the programming pulse is configured to increase a threshold voltage of the different memory cell when enabled for programming.

17. The method of claim 16 , further comprising:

enabling a third memory cell of the plurality of memory cells for programming during a next subsequent step of the plurality of steps of the programming pulse, wherein the respective voltage level of the next subsequent step of the programming pulse is configured to increase a threshold voltage of the third memory cell when enabled for programming;

inhibiting the particular memory cell from programming during the subsequent step of the programming pulse and during the next subsequent step of the programming pulse;

inhibiting the different memory cell from programming during the next subsequent step of the programming pulse; and

inhibiting the third memory cell from programming during the particular step of the programming pulse and during the subsequent step of the programming pulse.

18. The method of claim 17 , further comprising inhibiting a fourth memory cell of the plurality of memory cells from programming during the particular step of the programming pulse, during the subsequent step of the programming pulse, and during the next subsequent step of the programming pulse.

19. The method of claim 16 , further comprising:

enabling a third memory cell of the plurality of memory cells for programming during the particular step of the programming pulse, wherein the respective voltage level of the particular step of the programming pulse is configured to increase a threshold voltage of the third memory cell when enabled for programming;

inhibiting the particular memory cell from programming during the subsequent step of the programming pulse; and

inhibiting the third memory cell from programming during the subsequent step of the programming pulse;

wherein a target programmed data state of the third memory cell is different than a target programmed data state of the particular memory cell.

20. The method of claim 19 , wherein enabling the different memory cell for programming during the subsequent step of the programming pulse comprises enabling the different memory cell for programming toward a target programmed data state corresponding to a threshold voltage level that is lower than a threshold voltage level corresponding to the target programmed data state of the particular memory cell and lower than a threshold voltage level corresponding to the target programmed data state of the third memory cell.