Apparatus and methods for manipulating radio frequency power at an edge ring in plasma process device

1. A substrate support, comprising:

a vertical stack comprising:

an electrostatic chuck having a substrate electrode embedded therein for chucking a substrate to an upper surface of the electrostatic chuck, wherein the electrostatic chuck includes one or more channels through which a fluid is provided to facilitate temperature control of the substrate support,

a ground plate surrounding an insulating layer, wherein the insulating layer is below the electrostatic chuck,

a baseplate underneath the electrostatic chuck to feed radio frequency (RF) power to the substrate, the baseplate positioned between a lower portion of the ground plate and the electrostatic chuck,

a quartz pipe ring circumscribing the baseplate and the electrostatic chuck;

an edge ring disposed over the electrostatic chuck and circumscribes the substrate;

an edge ring electrode located underneath the edge ring; and

a tuning circuit configured to couple a first RF power source at a first frequency and a second RF power source at a second frequency that provide power to the substrate electrode and to the edge ring electrode through three transmission lines spaced about the substrate support at even intervals, the tuning circuit comprising:

a RF circuit including a LC resonant circuit coupled to the edge ring electrode through one of the transmission lines, the LC resonant circuit comprising:

a first variable capacitor coupled to the edge ring electrode, and

a first inductor coupled to the edge ring electrode.

2. The substrate support of claim 1 , further comprising: a controller configured to adjust the first variable capacitor to manipulate either voltage o current at the edge ring through the edge ring electrode.

3. The substrate support of claim 1 , wherein the first variable capacitor is coupled to one of the RF power sources, and the RF circuit further includes

a second variable capacitor that is coupled to the ground and to a point between the edge ring electrode and the first variable capacitor.

4. The substrate support of claim 3 , wherein a first range of values of the combination of the first variable capacitor and the second variable capacitor increase/decrease amplitude of voltage at the edge ring at one frequency, and wherein a second range of the combination of the first variable capacitor and the second variable capacitor increase/decrease the amplitude of the voltage at the edge ring at another frequency.

5. The substrate support of claim 1 , wherein the RF circuit further comprises the first inductor coupled to the first variable capacitor.

6. The substrate support of claim 5 , wherein the first variable capacitor is coupled to ground, wherein the first inductor is connected between the first variable capacitor and the edge ring electrode.

7. The substrate support of claim 5 , wherein the first variable capacitor is coupled to ground, wherein the first inductor and the first variable capacitor are connected in series.

8. The substrate support of claim 5 , wherein the first variable capacitor is coupled to ground, wherein the first inductor and the first variable capacitor are connected in parallel.

9. The substrate support of claim 5 , wherein the RF circuit further comprises a second variable capacitor connected to a second inductor.

10. The substrate support of claim 9 , wherein the second variable capacitor and the second inductor are connected to the edge ring electrode between an RF power source and the first inductor and the first variable capacitor.

11. A process chamber comprising:

a chamber body;

a lid disposed on the chamber body;

an inductively coupled plasma apparatus positioned above the lid; and

a substrate support positioned within the chamber body, the substrate support comprising:

a vertical stack comprising:

an electrostatic chuck having a substrate electrode embedded therein for chucking a substrate to an upper surface of the electrostatic chuck, wherein the electrostatic chuck includes one or more channels through which a fluid is provided to facilitate temperature control of the substrate support,

a ground plate surrounding an insulating layer, wherein the insulating layer is below the electrostatic chuck,

a baseplate underneath the electrostatic chuck to feed radio frequency (RF) power to the substrate, the baseplate positioned between a lower portion of the ground plate and the electrostatic chuck,

a quartz pipe ring circumscribing the baseplate and the electrostatic chuck;

an edge ring disposed over the electrostatic chuck and circumscribes the substrate

an edge ring electrode located about a periphery of the baseplate, wherein the edge ring electrode is located underneath the edge ring: and

a tuning circuit configured to couple a first RF power source at a first frequency and a second RF power source at a second frequency that provide power to the substrate electrode and to the edge ring electrode through three transmission lines spaced about the substrate support at even intevals, the tuning circuit comprising:

a RF circuit including:

a LC resonant circuit coupled to the edge ring electrode through one of the transmission lines, the LC resonant circuit comprising: a first variable capacitor, a first inductor, and a second inductor coupled to the edge ring electrode.

12. The process chamber of claim 11 , further comprising:

a controller configured to adjust the first variable capacitor to manipulate either voltage or current at the edge ring through the edge ring electrode, wherein the first variable capacitor is coupled to one of the RF power sources, and the RF circuit further includes a second variable capacitor that is coupled to ground and to a point between the edge ring electrode and the first variable capacitor.

13. The process chamber of claim 11 , wherein the first variable capacitor is coupled to ground, and the first inductor is coupled to ground and to the edge ring electrode, and is connected in parallel to the first variable capacitor.

14. The process chamber of claim 11 , wherein the first variable capacitor is coupled to ground, and the first inductor is coupled to ground and to the edge ring electrode, and is connected in series to the first variable capacitor.

15. The substrate support of claim 11 , wherein the first variable capacitor is coupled to ground, and the first inductor and the first variable capacitor are connected in series.

16. The substrate support of claim 11 , wherein the first variable capacitor is coupled to ground, and the first inductor and the first variable capacitor are connected in parallel.

17. The process chamber of claim 11 , herein the second inductor is coupled to one of the RF power sources and to the edge ring electrode, and wherein the first variable capacitor is coupled to the RE power source and to the edge ring electrode, and is connected in parallel to the first inductor.