Substrate processing method and apparatus for controlling phase angles of harmonic signals
A method of processing a material layer on a substrate is provided. The method includes delivering RF power from an RF power source through a match network to a showerhead of a capacitively coupled plasma chamber; igniting a plasma within the capacitively coupled plasma chamber; measuring one or more phase angles of one or more harmonic signals of the RF power relative to a phase of a fundamental frequency of the RF power; and adjusting at least one phase angle of at least one harmonic signal of the RF power relative to the phase of the fundamental frequency of the RF power based on the one or more phase angle measurements.
1. A method of processing a material layer on a substrate, comprising:
delivering RF power from an RF power source through a match network to a showerhead to ignite a plasma within a processing region of a capacitively coupled plasma chamber, wherein delivering RF power comprises:
measuring one or more phase angles of one or more harmonic signals of the delivered RF power relative to a phase of a fundamental frequency of the delivered RF power; and
adjusting at least one phase angle of at least one harmonic signal of the delivered RF power relative to the phase of the fundamental frequency of the delivered RF power based on the one or more phase angle measurements such that the at least one phase angle of the at least one harmonic signal of the delivered RF power relative to the phase of the fundamental frequency of the delivered RF power is offset from the phase of the fundamental frequency of the delivered RF power, wherein the adjusting of the at least one phase angle of the at least one harmonic signal of the delivered RF power includes modifying a capacitance or an inductance in the match network.
2. The method of claim 1 , wherein the at least one phase angle adjusted is a phase angle of a second-order harmonic signal or a third-order harmonic signal of the delivered RF power.
3. The method of claim 1 , wherein adjusting the at least one phase angle of the at least one harmonic signal of the delivered RF power relative to the phase of the fundamental frequency of the delivered RF power is also based on the particular material layer being processed.
4. The method of claim 1 , further comprising matching an impedance of the RF power source with an impedance of an RF load, wherein the impedance matching is performed separately from adjusting the at least one phase angle of the at least one harmonic signal.
5. The method of claim 1 , wherein the at least one phase angle is adjusted by modifying at least one inductance and at least two capacitances in the match network.
6. The method of claim 1 , wherein the at least one phase angle is adjusted by modifying at least one capacitance and least two inductances in the match network.
7. The method of claim 1 , wherein the match network includes a π-network configuration.
8. The method of claim 1 , wherein the match network includes a T-network configuration.
9. The method of claim 1 , wherein the at least one harmonic phase is adjusted without modifying an overall impedance of the RF power source that is matched with an impedance of an RF load, wherein the RF load includes the ignited plasma.
10. A method of processing a material layer on a substrate, comprising:
delivering RF power from an RF power source through a match network to a showerhead to ignite a plasma within a capacitively coupled plasma chamber, wherein delivering RF power comprises:
measuring one or more phase angles of one or more harmonic signals of the delivered RF power relative to a phase of a fundamental frequency of the delivered RF power; and
adjusting an impedance of at least one electronic component in the match network based on the one or more phase angle measurements such that the one or more phase angles of the one or more harmonic signals of the delivered RF power relative to the phase of the fundamental frequency of the delivered RF power are controlled to be offset from the phase of the fundamental frequency of the delivered RF power.
11. The method of claim 10 , wherein the impedance of the at least one electronic component is adjusted based on a phase angle measurement of a second-order harmonic signal of the delivered RF power relative to the phase of the fundamental frequency of the delivered RF power.
12. The method of claim 10 , wherein the impedance of the at least one electronic component is adjusted based on a phase angle measurement of a third-order harmonic signal of the delivered RF power relative to the phase of the fundamental frequency of the delivered RF power.
13. The method of claim 10 , wherein the adjusting an impedance of at least one electronic component includes modifying at least one inductance and at least two capacitances in the match network.
14. The method of claim 10 , wherein the adjusting an impedance of at least one electronic component includes modifying at least one capacitance and least two inductances in the match network.
15. The method of claim 10 , wherein the match network includes a π-network configuration.
16. The method of claim 10 , wherein the adjusting at least one impedance includes modifying an impedance of at least three electronic components without modifying an overall impedance of the RF power source that is matched with an impedance of an RF load, wherein the RF load includes the ignited plasma.
17. A method of processing a material layer on a substrate, comprising:
delivering RF power from an RF power source through a match network to a showerhead to ignite a plasma within a processing region of a capacitively coupled plasma chamber, wherein delivering RF power comprises:
measuring one or more phase angles of one or more harmonic signals of the delivered RF power relative to a phase of a fundamental frequency of the delivered RF power; and
adjusting at least one phase angle of at least one harmonic signal of the delivered RF power relative to the phase of the fundamental frequency of the delivered RF power based on the one or more phase angle measurements such that the at least one phase angle of the at least one harmonic signal of the delivered RF power relative to the phase of the fundamental frequency of the delivered RF power is offset from the phase of the fundamental frequency of the delivered RF power, wherein the at least one phase angle of the at least one harmonic signal of the delivered RF power is adjusted by:
modifying at least one inductance and at least two capacitances in the match network; or
modifying at least one capacitance and least two inductances in the match network.
18. The method of claim 17 , wherein the at least one phase angle adjusted is a phase angle of a second-order harmonic signal or a third-order harmonic signal of the delivered RF power.
19. The method of claim 17 , wherein the match network includes a π-network configuration.
20. The method of claim 17 , wherein the match network includes a T-network configuration.