FinFET having a work function material gradient
A semiconductor device includes a semiconductor substrate having a channel region. A gate dielectric layer is over the channel region of the semiconductor substrate. A work function metal layer is over the gate dielectric layer. The work function metal layer has a bottom portion, an upper portion, and a work function material. The bottom portion is between the gate dielectric layer and the upper portion. The bottom portion has a first concentration of the work function material, the upper portion has a second concentration of the work function material, and the first concentration is higher than the second concentration. A gate electrode is over the upper portion of the work function metal layer.
1. A semiconductor device comprising:
a semiconductor substrate having a channel region;
a gate dielectric layer over the channel region of the semiconductor substrate;
a first work function metal layer over and in contact with the gate dielectric layer;
a second work function metal layer in contact with the first work function metal layer, wherein the second work function metal layer has a bottom portion, an upper portion, and a work function material, the bottom portion is between the gate dielectric layer and the upper portion, the bottom portion has a first concentration of the work function material, the upper portion has a second concentration of the work function material, and the first concentration is at least twice the second concentration, and wherein the first work function metal layer has a non-zero concentration of the work function material; and
a gate electrode over the upper portion of the second work function metal layer.
2. The semiconductor device of claim 1 , wherein the bottom portion of the second work function metal layer has a lower effective work function value than the upper portion of the second work function metal layer.
3. The semiconductor device of claim 1 , wherein the upper portion of the second work function metal layer is thicker than the bottom portion of the second work function metal layer.
4. The semiconductor device of claim 1 , wherein the work function material has a vacuum work function value smaller than about 4.4 eV.
5. The semiconductor device of claim 1 , wherein the semiconductor substrate has a plurality of fins and an isolation structure between the fins, and the second work function metal layer conformingly covers the plurality of fins and the isolation structure.
6. The semiconductor device of claim 1 , wherein the second work function metal layer has a work function material gradient gradually reducing from the bottom portion toward the upper portion.
7. The semiconductor device of claim 1 , wherein the second work function metal layer has an effective work function value increasing from the bottom portion toward the upper portion.
8. The semiconductor device of claim 1 , wherein the second work function metal layer has a middle portion between the upper portion and the bottom portion, and the middle portion has a third concentration of the work function material higher than the second concentration.
9. The semiconductor device of claim 1 , wherein the second work function metal layer has a middle portion between the upper portion and the bottom portion, and the middle portion of the second work function metal layer has a lower effective work function value than the upper portion of the second work function metal layer.
10. The semiconductor device of claim 1 , wherein the second work function metal layer has a middle portion between the upper portion and the bottom portion, and the middle portion has a third concentration of the work function material lower than the first concentration.
11. The semiconductor device of claim 1 , wherein the second work function metal layer has a middle portion between the upper portion and the bottom portion, and the middle portion has a higher effective work function value than the bottom portion of the second work function metal layer.
12. The semiconductor device of claim 1 , wherein the gate dielectric layer comprises a high-k dielectric layer and a high-k dielectric cap over the high-k dielectric layer.
13. A semiconductor device comprising:
a semiconductor substrate having a channel region;
a gate dielectric layer over the channel region of the semiconductor substrate;
an aluminum-containing work function metal layer over the gate dielectric layer, wherein the aluminum-containing work function metal layer comprises a first work function material; and
a gate electrode over and in contact with the aluminum-containing work function metal layer, the gate electrode comprising tungsten, wherein along a direction from the gate electrode toward the channel region, a concentration of the first work function material in the aluminum-containing work function metal layer increases from a first value to a peak value and then decreases from the peak value to a second value, and wherein an aluminum concentration at an interface of the gate electrode and the aluminum-containing work function metal layer has a non-zero value lower than about 35%.
14. The semiconductor device of claim 13 , wherein the first work function material has a vacuum work function value smaller than about 4.4 eV.
15. The semiconductor device of claim 13 , further comprising a metal layer between the aluminum-containing work function metal layer and the gate dielectric layer.
16. The semiconductor device of claim 15 , wherein the metal layer has a second work function material, and the second work function material is a p-type work function material having a vacuum work function value greater than about 4.4 eV.
17. A semiconductor device comprising:
a semiconductor substrate having a fin;
source and drain regions in the fin; and
a gate stack over the fin and between the source and drain regions, wherein the gate stack comprises:
a gate dielectric layer;
a metal layer over the gate dielectric layer, wherein the metal layer comprises a p-type work function material;
a work function metal layer over the metal layer; and
a gate electrode over the work function metal layer, wherein from a first interface between the metal layer and the work function metal layer toward a second interface between the work function metal layer and the gate electrode, an aluminum concentration in the work function metal layer increases from a first non-zero value to a peak value, and then decreases from the peak value to a second non-zero value, and wherein the first and second non-zero values are lower than about 35%.
18. The semiconductor device of claim 17 , wherein the gate electrode comprises tungsten and is in contact with the work function metal layer.
19. The semiconductor device of claim 17 , wherein the work function metal layer is in contact with the gate electrode.
20. The semiconductor device of claim 17 , wherein the gate dielectric layer comprises a high-k dielectric layer and a high-k dielectric cap over the high-k dielectric layer.