High quality silicon carbide crystals and method of making the same

1. A physical vapor transport (PVT) apparatus for growing SiC boules, comprising:

a crystal growth chamber defined as having a central vertical axis;

a sealed crucible disposed within the crystal growth chamber and configured to support a quantity of sublimation source material disposed in a lower region thereof, the sealed crucible further comprising

a seed fixture disposed above the lower region and disposed in an offset position

with respect to the central vertical axis of the crystal growth chamber; and

a heat source disposed to surround the crystal growth chamber and configured to raise a temperature within the sealed crucible such that the source material vaporizes and deposits on a seed wafer included within the seed fixture, the offset position of the seed fixture providing a radial temperature gradient across an exposed surface thereof.

2. The PVT apparatus as defined in claim 1 wherein the crucible is aligned with the central vertical axis.

3. The PVT apparatus as defined in claim 1 wherein the crucible includes an open container for storing the sublimation source material.

4. The PVT apparatus as defined in claim 3 wherein the open container is offset from the central vertical axis.

5. The PVT apparatus as defined in claim 3 wherein the open container is aligned with the seed fixture.

6. The PVT apparatus as defined in claim 1 wherein the seed fixture comprises a single fixture component.

7. The PVT apparatus as defined in claim 6 wherein the single fixture component is configured to support an individual single crystal seed wafer.

8. The PVT apparatus as defined in claim 6 wherein the single fixture component is configured to support a plurality of separate single crystal seed wafers in a spaced-apart arrangement.

9. The PVT apparatus as defined in claim 1 wherein the seed fixture comprises a plurality of separate fixture components, each separate fixture component offset from the central vertical axis.

10. The PVT apparatus as defined in claim 9 wherein each separate fixture component is configured to support an individual single crystal seed wafer.

11. The PVT apparatus as defined in claim 9 wherein each separate fixture component is configured to support a plurality of separate single crystal seed wafers in a spaced-apart arrangement.

12. The PVT apparatus as defined in claim 1 wherein the crucible comprises a plurality of separate crucible components, each separate crucible component disposed within the crystal growth chamber such that its associated seed fixture is disposed in an offset position with respect to the central vertical axis of the growth chamber.

13. The PVT apparatus as defined in claim 12 wherein each crucible component utilizes a different sublimation source material.

14. The PVT apparatus as defined in claim 1 wherein the heat source is selected from the group consisting of: inductive RF coils and resistive heaters.

15. A method of growing silicon carbide single crystal boules from a single crystal seed wafer, comprising:

positioning a crucible loaded with sublimation source material into a crystal growth chamber, the crystal growth chamber having a central vertical axis;

loading at least one single crystal seed wafer onto a seed fixture;

positioning the loaded seed fixture in the crucible in a manner such that the loaded seed fixture is offset from the central vertical axis of the crystal growth chamber;

sealing the crucible; and

heating the crystal growth chamber to a temperature sufficient to initiate sublimation of the source material and create vapors that rise and deposit on an exposed surface of the seed wafer and result in growing the boule, the heating creating a radial temperature gradient across the exposed surface of the seed wafer related to the offset location of the seed fixture with respect to the central vertical axis of the crystal growth chamber.

16. The method as defined in claim 15 wherein the loading step comprises loading a plurality of separate seed wafers in a spaced-apart configuration onto the seed fixture.

17. A method of growing silicon carbide single crystal boules from a single crystal seed wafer, comprising:

positioning a plurality of separate crucibles loaded with sublimation source material into a crystal growth chamber, the crystal growth chamber having a central vertical axis;

providing a plurality of separate seed fixtures, associated with the plurality of separate crucibles in a one-to-one relationship;

loading at least one single crystal seed wafer onto each separate seed fixture of the plurality of separate seed fixtures;

positioning each loaded seed fixture in its associated crucible in a manner such that the loaded seed fixture is offset from the central vertical axis of the crystal growth chamber;

sealing the plurality of separate crucibles; and

heating the crystal growth chamber to a temperature sufficient to initiate sublimation of the source material within each crucible and create vapors that rise and deposit on an exposed surface of the seed wafer within each crucible and result in growing an associated boule, the heating creating a radial temperature gradient across the exposed surface of each seed wafer related to the offset location of each seed fixture with respect to the central vertical axis of the crystal growth chamber.

18. The method as defined in claim 17 wherein each crucible of the plurality of separate crucibles is loaded with a different sublimation source material.