IP Library Assignment 065773/0129
Patent Assignment
Reel/Frame 065773/0129

Partial Termination and Release of Security Interest in Patents

Recorded: 2023-12-04 Pages: 7
Assignor
JPMORGAN CHASE BANK, N.A.
Executed: 2023-12-04
Assignee
II-VI DELAWARE, INC.
375 SAXONBURG BOULEVARD, SAXONBURG, PENNSYLVANIA, 16056
Covered Properties (33)
Sic Single Crystal(S) Doped from Gas Phase
Application: 17/444,863 →
Publication: US US20220049373A1
Vanadium-Compensated 4H and 6H Single Crystals of Optical Grade, and Silicon Carbide Crystals and Methods for Producing Same
Application: 17/249,395 →
Publication: US US20210269938A1
Method for Preparing an Aluminum Doped Silicon Carbide Crystal by Providing a Compound Including Aluminum and Oxygen in a Capsule Comprised of a First and Second Material
Application: 17/029,746 →
Publication: US US20210269937A1
Large Diameter Silicon Carbide Single Crystals and Apparatus and Method of Manufacture Thereof
Application: 17/249,597 →
Publication: US US20210189591A1
Method for Manufacturing a Grid
Application: 17/660,888 →
Publication: US US20220254887A1
"Method for Synthesizing Ultrahigh-Purity Silicon Carbide"
Patent: 9,388,509 →
Application: 13/951,808 →
Publication: US US20130309496A1
Vanadium Compensated, SI SiC Single Crystals of NU and PI Type and the Crystal Growth Process Thereof
Patent: 48,378 →
Application: 15/583,538 →
SiC Single Crystal Sublimation Growth Apparatus
Application: 16/368,977 →
Publication: US US20190249332A1
Large Diameter Silicon Carbide Single Crystals and Apparatus and Method of Manufacture Thereof
Application: 16/458,385 →
Publication: US US20190323145A1
Sic Single Crystal Sublimation Growth Method and Apparatus
Application: 13/255,151 →
Publication: US US20120103249A1
Method of and System for Forming Sic Crystals Having Spatially Uniform Doping Impurities
Patent: 7,608,524 →
Application: 11/405,368 →
Publication: US US20060243984A1
System for Forming Sic Crystals Having Spatially Uniform Doping Impurities
Patent: 8,216,369 →
Application: 12/573,288 →
Publication: US US20100018455A1
Large Diameter, High Quality SiC Single Crystals, Method and Apparatus
Patent: 46,315 →
Application: 14/506,963 →
A Concept for Silicon Carbide Power Devices
Application: 16/647,067 →
Publication: US US20200243513A1
Vanadium Doped Sic Single Crystals and Method Thereof
Patent: 9,322,110 →
Application: 14/064,604 →
Publication: US US20140234194A1
Intra-Cavity Gettering of Nitrogen in Sic Crystal Growth
Patent: 9,017,629 →
Application: 12/067,258 →
Publication: US US20090169459A1
Silicon carbide with low nitrogen content and method for preparation
Patent: 8,858,709 →
Application: 11/784,971 →
Halosilane Assisted Pvt Growth of Sic
Patent: 8,512,471 →
Application: 13/471,866 →
Publication: US US20120225004A1
Silicon Carbide Single Crystals with Low Boron Content
Patent: 8,361,227 →
Application: 11/900,242 →
Publication: US US20080072817A1
Guided Diameter Sic Sublimation Growth with Multi-Layer Growth Guide
Patent: 8,313,720 →
Application: 12/522,549 →
Publication: US US20100061914A1
Axial Gradient Transport Growth Process and Apparatus Utilizing Resistive Heating
Patent: 9,228,274 →
Application: 12/632,906 →
Publication: US US20100139552A1
Vanadium Compensated, SI SiC Single Crystals of NU and PI Type and the Crystal Growth Process Thereof
Patent: 9,090,989 →
Application: 13/902,016 →
Publication: US US20130320275A1
Large Diameter, High Quality Sic Single Crystals, Method and Apparatus
Patent: 8,741,413 →
Application: 13/867,198 →
Publication: US US20130280466A1
Method for Silicon Carbide Crystal Growth by Reacting Elemental Silicon Vapor With a Porous Carbon Solid Source Material
Patent: 9,580,837 →
Application: 14/475,803 →
Publication: US US20160060789A1
High Quality Silicon Carbide Crystals and Method of Making the Same
Application: 16/031,917 →
Concept for Silicon for Carbide Power Devices
Application: 17/577,226 →
Publication: US US20220139906A1
SiC Single Crystal Sublimation Growth Apparatus
Application: 17/447,742 →
Publication: US US20220002906A1
Integration of a Schottky Diode with a Mosfet
Application: 16/647,186 →
Publication: US US20210126121A1
Integration of a Schottky Diode with a Mosfet
Application: 17/444,817 →
Publication: US US20220029010A1
Feeder Design with High Current Capability
Application: 16/647,202 →
Publication: US US20200266272A1
Feeder Design with High Current Capability
Application: 17/448,790 →
Publication: US US20220020850A1
Buried Grid with Shield in Wide Band Gap Material
Application: 17/055,686 →
Publication: US US20210202695A1
A Method for Manufacturing a Grid
Application: 16/647,094 →
Publication: US US20200219985A1
Related Assignments (25)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest Jun 28, 2006
From: GUPTA, AVINASH K.; SEMENAS, EDWARD; ZWIEBACK, ILYA; BARRETT, DONOVAN L.
To: II-VI INCORPORATED
Reel/Frame 017854/0804 →
Assignment of Assignor's Interest Apr 10, 2007
From: ZWIEBACK, ILYA; GUPTA, AVINASH K.
To: II-VI INCORPORATED
Reel/Frame 019205/0989 →
Assignment of Assignor's Interest Aug 20, 2008
From: ZWIEBACK, ILYA; BARRETT, DONOVAN L.; GUPTA, AVINASH K.
To: II-VI INCORPORATED
Reel/Frame 021415/0910 →
Assignment of Assignor's Interest Oct 5, 2009
From: GUPTA, AVINASH K.; ZWIEBACK, ILYA; BARRETT, DONOVAN L.; SOUZIS, ANDREW E.
To: II-VI INCORPORATED
Reel/Frame 023325/0487 →
Assignment of Assignor's Interest Jan 23, 2012
From: GUPTA, AVINASH K.; ZWIEBACK, ILYA; SEMENAS, EDWARD; GETKIN, MARCUS L.
To: II-VI INCORPORATED
Reel/Frame 027577/0368 →
Assignment of Assignor's Interest May 16, 2012
From: ZWIEBACK, ILYA; ANDERSON, THOMAS E.; GUPTA, AVINASH K.
To: II-VI INCORPORATED
Reel/Frame 028215/0610 →
Assignment of Assignor's Interest Jul 31, 2013
From: ZWIEBACK, ILYA; GUPTA, AVINASH K.; WU, PING; BARRETT, DONOVAN L.
To: II-IV INCORPORATED
Reel/Frame 030912/0322 →
Corrective Assignment to Correct the Assignee's Name Previously Recorded on Reel 030912 Frame 0322. Assignor(S) Hereby Confirms the Assignment of Assignors Interest. Aug 12, 2013
From: ZWIEBACK, ILYA; GUPTA, AVINASH K.; WU, PING; BARRETT, DONOVAN L.
To: II-VI INCORPORATED
Reel/Frame 031003/0807 →
Assignment of Assignor's Interest Oct 29, 2013
From: ZWIEBACK, ILYA; ANDERSON, THOMAS E.; GUPTA, AVINASH K.; NOLAN, MICHAEL C.
To: II-VI INCORPORATED
Reel/Frame 031496/0145 →
Assignment of Assignor's Interest Oct 6, 2014
From: ZWIEBACK, ILYA; ANDERSON, THOMAS E.; SOUZIS, ANDREW E.; RULAND, GARY E.
To: II-VI INCORPORATED
Reel/Frame 033892/0286 →
Assignment of Assignor's Interest May 1, 2017
From: ZWIEBACK, ILYA; WU, PING; RENGARAJAN, VARATHARAJAN; GUPTA, AVINASH K.
To: II-VI INCORPORATED
Reel/Frame 042197/0075 →
Assignment of Assignor's Interest Mar 29, 2019
From: GUPTA, AVINASH K.; ZWIEBACK, ILYA; SEMENAS, EDWARD; GETKIN, MARCUS L.
To: II-VI INCORPORATED
Reel/Frame 048736/0230 →
Assignment of Assignor's Interest Jul 1, 2019
From: XU, XUEPING; ZWIEBACK, ILYA; GUPTA, AVINASH K.; RENGARAJAN, VARATHARAJAN
To: II-VI INCORPORATED
Reel/Frame 049638/0916 →
Notice of Grant of Security Interest in Patents Sep 25, 2019
From: II-VI INCORPORATED; MARLOW INDUSTRIES, INC.; EPIWORKS, INC.; LIGHTSMYTH TECHNOLOGIES, INC.
To: BANK OF AMERICA, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 050484/0204 →
Assignment of Assignor's Interest Dec 6, 2019
From: II-VI INCORPORATED
To: II-VI DELAWARE, INC.
Reel/Frame 051210/0411 →
Assignment of Assignor's Interest Mar 16, 2020
From: SCHÖNER, ADOLF; THIERRY-JEBALI, NICOLAS; VIEIDER, CHRISTIAN; RESHANOV, SERGEY
To: ASCATRON AB
Reel/Frame 052126/0509 →
Assignment of Assignor's Interest Sep 24, 2020
From: ZWIEBACK, ILYA; RENGARAJAN, VARATHARAJAN; SOUZIS, ANDREW; RULAND, GARY E.
To: II-VI DELAWARE, INC.
Reel/Frame 053873/0001 →
Assignment of Assignor's Interest Oct 2, 2020
From: ASCATRON AB
To: II-VI DELAWARE, INC.
Reel/Frame 053963/0377 →
Assignment of Assignor's Interest Apr 27, 2021
From: ZWIEBACK, ILYA; RENGARAJAN, VARATHARAJAN; SOUZIS, ANDREW E; RULAND, GARY
To: II-VI DELAWARE, INC
Reel/Frame 056059/0001 →
Assignment of Assignor's Interest Aug 18, 2021
From: ZWIEBACK, ILYA; RENGARAJAN, VARATHARAJAN
To: II-VI DELAWARE, INC
Reel/Frame 057215/0711 →
Security Interest Jul 1, 2022
From: II-VI INCORPORATED; II-VI DELAWARE, INC.; M CUBED TECHNOLOGIES, INC.; II-VI PHOTONICS (US), INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 060562/0254 →
Patent Release and Reassignment Jul 5, 2022
From: BANK OF AMERICA, N.A., AS ADMINISTRATIVE AGENT
To: II-VI INCORPORATED; MARLOW INDUSTRIES, INC.; EPIWORKS, INC.; LIGHTSMYTH TECHNOLOGIES, INC.
Reel/Frame 060574/0001 →
Assignment of Assignor's Interest Oct 4, 2023
From: XU, XUEPING; ZWIEBACK, ILYA; GUPTA, AVINASH K; RENGARAJAN, VARATHARAJAN
To: II-VI INCORPORATED
Reel/Frame 065126/0549 →
Assignment of Assignor's Interest Oct 4, 2023
From: II-VI INCORPORATED
To: II-VI DELAWARE, INC.
Reel/Frame 065129/0197 →
Assignment of Assignor's Interest Nov 21, 2023
From: ASCATRON AB
To: II-VI DELAWARE, INC.
Reel/Frame 065641/0645 →