Memory cell structure
A memory cell structure includes a plurality of write lines arranged for writing a synapse state to a synapse memory cell including a plurality of cell components each including at least one unit cell, each of the plurality of write lines being used for writing the synapse state by writing a first set of states to a corresponding cell component of the plurality of cell components by writing one of a second set of states to each unit cell included in the corresponding cell component, the first and second sets each having a predetermined number of states, and the first set depending on the second set, and a read line arranged for reading the synapse state from the synapse memory cell.
1. A memory cell structure comprising:
a plurality of write lines configured to write a synapse state to a synapse memory cell including a plurality of cell components each including at least one unit cell, each of the plurality of write lines being configured to write the synapse state by writing a first set of states to a corresponding cell component of the plurality of cell components by writing a second set of states to each unit cell included in the corresponding cell component, the first and second sets each having a predetermined number of states, and the first set being dependent on the second set; and
a read line configured to read the synapse state from the synapse memory cell.
2. The memory cell structure of claim 1 , wherein each unit cell is a resistance and the first and second sets of states include states regarding conductance of the resistance.
3. The memory cell structure of claim 1 , wherein each unit cell is a capacitor and the first and second sets of states include states regarding capacitance of the capacitor.
4. The memory cell structure of claim 1 , wherein the predetermined number of states is two.
5. The memory cell structure of claim 4 , wherein:
an i-th cell component of the plurality of cell components includes 2 i-1 unit cells, where i is a natural number; and
each of the states in the first set is 2 i-1 times of a corresponding one of the states in the second set.
6. The memory cell structure of claim 1 , wherein the predetermined number of states is three.
7. The memory cell structure of claim 6 , wherein:
an i-th cell component of the plurality of cell components includes 3 i-1 unit cells, where i is a natural number; and
each of the states in the first set is 3 i-1 times of a corresponding one of the states in the second set.
8. The memory cell structure of claim 1 , wherein the read line is configured to read the synapse state from the synapse memory cell by reading the first set of states from the plurality of cell components simultaneously.
9. A memory cell system comprising:
a plurality of write drivers configured to write a synapse state to the synapse memory cell including a plurality of cell components each including at least one unit cell, each of the plurality of write drivers being configured to write the synapse state by writing a first set of states to a corresponding cell component of the plurality of cell components by writing a second set of states to each unit cell included in the corresponding cell component, the first and second sets each having a predetermined number of states, and the first set being dependent on the second set; and
a read driver configured to read the synapse state from the synapse memory cell.
10. The memory cell system of claim 9 , wherein each unit cell is a resistance and the first and second sets of states include states regarding conductance of the resistance.
11. The memory cell system of claim 9 , wherein each unit cell is a capacitor and the first and second sets of states include states regarding capacitance of the capacitor.
12. The memory cell system of claim 9 , wherein:
a predetermined number of the predetermined number of states is two;
i-th cell component of the plurality of cell components includes 2 i-1 unit cells, where i is a natural number; and
each of the predetermined number of states in the first set is 2 i-1 times of a corresponding one of the predetermined number of states in the second set.
13. The memory cell system of claim 9 , wherein:
a predetermined number of the predetermined number of states is three;
i-th cell component of the plurality of cell components includes 3 i-1 unit cells, where i is a natural number; and
each of the predetermined number of states in the first set is 3 i-1 times of a corresponding one of the predetermined number of states in the second set.
14. The memory cell system of claim 9 , wherein the read driver is configured to read the synapse state from the synapse memory cell by reading the first set of states from the plurality of cell components simultaneously.
15. A method for fabricating a memory cell structure, the method comprising:
arranging a plurality of write lines configured to write a synapse state to a synapse memory cell including a plurality of cell components each including at least one unit cell, each of the plurality of write lines being configured to write the synapse state by writing a first set of states to a corresponding cell component of the plurality of cell components by writing a second set of states to each unit cell included in the corresponding cell component, and the first set being dependent on the second set; and
arranging a read line configured to read the synapse state from the synapse memory cell.
16. The method of claim 15 , wherein each unit cell is a resistance and the first and second sets of states include states regarding conductance of the resistance.
17. The method of claim 15 , wherein each unit cell is a capacitor and the first and second sets of states include states regarding capacitance of the capacitor.
18. The method of claim 15 , wherein:
the predetermined number of states is two,
an i-th cell component of the plurality of cell components includes 2 i-1 unit cells, where i is a natural number; and
each of the states in the first set is 2 i-1 times of a corresponding one of the states in the second set.
19. The method of claim 15 , wherein:
the predetermined number of states is three;
an i-th cell component of the plurality of cell components includes 3 i-1 cells, where i is a natural number; and
each of the states in the first set is 3 i-1 times of a corresponding one of the states in the second set.
20. The method of claim 15 , wherein the read line is configured to read the synapse state from the synapse memory cell by reading the first set of states from the plurality of cell components simultaneously.