Imaging device
View Patent ↗An imaging device includes: a pixel that includes a semiconductor substrate including a first diffusion region containing a first impurity of a first conductivity type, and a second diffusion region containing a second impurity of the first conductivity type, a concentration of the first impurity in the first diffusion region being less than a concentration of the second impurity in the second diffusion region, an area of the first diffusion region being less than an area of the second diffusion region in a plan view, a photoelectric converter configured to convert light into charges, and a first transistor including a source and a drain, the first diffusion region functioning as one of the source and the drain, the second diffusion region functioning as the other of the source and the drain, the first diffusion region being configured to store at least a part of the charges.
1. An imaging device comprising:
a pixel that includes
a semiconductor substrate including
a first diffusion region containing a first impurity of a first conductivity type, and
a second diffusion region containing a second impurity of the first conductivity type, a concentration of the first impurity in the first diffusion region being less than a concentration of the second impurity in the second diffusion region, an area of the first diffusion region being less than an area of the second diffusion region in a plan view,
a photoelectric converter configured to convert light into charges, and
a first transistor including a first source and a first drain, the first diffusion region functioning as one of the first source and the first drain, the second diffusion region functioning as the other of the first source and the first drain, the first diffusion region being configured to store at least a part of the charges.
2. The imaging device according to claim 1 , wherein
the semiconductor substrate includes a third diffusion region containing a third impurity of the first conductivity type,
the pixel includes a second transistor including a second source and a second drain, the third diffusion region functioning as one of the second source and the second drain, and
the concentration of the first impurity in the first diffusion region is less than a concentration of the third impurity in the third diffusion region.
3. The imaging device according to claim 1 , wherein the pixel includes a second transistor including a second source and a second drain, the first diffusion region functioning as one of the second source and the second drain.
4. The imaging device according to claim 1 , wherein
the first transistor includes a gate electrode, and
an area of a first portion of the first diffusion region is less than an area of a second portion of the second diffusion region in the plan view, the first portion being a portion of the first diffusion region not overlapping with the gate electrode in the plan view, the second portion being a portion of the second diffusion region not overlapping with the gate electrode in the plan view.
5. The imaging device according to claim 1 , wherein
the pixel includes
a first plug connected to a first portion of the first diffusion region, and
a second plug connected to a second portion of the second diffusion region, the first transistor includes a gate electrode, and
a distance between the first portion and the gate electrode is less than a distance between the second portion and the gate electrode in the plan view.
6. The imaging device according to claim 1 , wherein
the semiconductor substrate includes a third diffusion region containing a third impurity of a second conductivity type different from the first conductivity type,
the pixel includes a second transistor different from the first transistor and an isolation region isolating the first transistor from the second transistor, the third diffusion region functioning as the isolation region, and
the third diffusion region is not in contact with the first diffusion region on a surface of the semiconductor substrate.
7. The imaging device according to claim 1 , wherein
the semiconductor substrate contains a third impurity of a second conductivity type different from the first conductivity type,
the concentration of the first impurity in the first diffusion region is 1×10 16 atoms/cm 3 or more and 5×10 16 atoms/cm 3 or less, and
a concentration of the third impurity in a portion of the semiconductor substrate is 1×10 16 atoms/cm 3 or more and 5×10 16 atoms/cm 3 or less, the portion being adjacent to the first diffusion region.
8. The imaging device according to claim 1 , wherein the first diffusion region is circular in the plan view.
9. An imaging device comprising:
a pixel that includes
a semiconductor substrate including
a first diffusion region containing a first impurity of a first conductivity type, and
a second diffusion region containing a second impurity of the first conductivity type, a concentration of the first impurity in the first diffusion region being less than a concentration of the second impurity in the second diffusion region,
a photoelectric converter configured to convert light into charges,
a first transistor including a gate electrode, a first source and a first drain, the first diffusion region functioning as one of the first source and the first drain, the second diffusion region functioning as the other of the source and the drain, the first diffusion region being configured to store at least a part of the charges,
a first plug connected to a first portion of the first diffusion region, and
a second plug connected to a second portion of the second diffusion region, wherein
a distance between the first portion and the gate electrode is less than a distance between the second portion and the gate electrode in a plan view.
10. The imaging device according to claim 1 , wherein
the semiconductor substrate includes a third diffusion region containing a third impurity of a second conductivity type different from the first conductivity type, and
a bottom surface of the first diffusion region is in contact with the third diffusion region.
11. The imaging device according to claim 1 , wherein a width of the first diffusion region is less than a width of the second diffusion region in a channel width direction of the first transistor.
12. An imaging device comprising:
a pixel that includes
a semiconductor substrate including
a first diffusion region containing a first impurity of a first conductivity type,
a second diffusion region containing a second impurity of the first conductivity type, an area of the first diffusion region being less than an area of the second diffusion region in a plan view, and
an impurity region containing a third impurity of a second conductivity type different from the first conductivity type, a bottom surface of the first diffusion region being in contact with the impurity region,
a photoelectric converter configured to convert light into charges, and
a first transistor including a first source and a first drain, the first diffusion region functioning as one of the first source and the first drain, the second diffusion region functioning as the other of the first source and the first drain, the first diffusion region being configured to store at least a part of the charges.
13. The imaging device according to claim 12 , wherein a width of the first diffusion region is less than a width of the second diffusion region in a channel width direction of the first transistor.