METHOD OF IMPLEMENTING ERROR CORRECTION CODE USED BY MEMORY STORAGE APPARATUS AND MEMORY STORAGE APPARATUS USING THE SAME
The disclosure is directed to a method and an apparatus for implementing an error correcting code (ECC) used by a memory storage apparatus. In an aspect of the disclosure, the method would include not limited to: receiving a write command having a write address and a write data; reading an existing codeword comprising a predetermined bit sequence; encoding the write data into a new codeword based on a default ECC; flipping at least one bit of the new codeword based on a number of bits required to be changed from the existing codeword to the new codeword; writing the new codeword, wherein in response to every message bit of the new codeword to be flipped once, either an average or a maximum number of parity bits flips of the new codeword is minimized according to a modified ECC which is based on the default ECC.
1 . A method of implementing an error correcting code (ECC) used by a memory storage apparatus, the method comprising:
receiving a write command comprising a write address and a write data;
reading an existing codeword comprising a predetermined bit sequence;
encoding the write data into a new codeword based on a default ECC;
flipping at least one bit of the new codeword based on a number of bits required to be changed from the existing codeword to the new codeword; and
writing the new codeword, wherein in response to every message bit of the new codeword to be flipped once, either an average or a maximum number of parity bits flips of the new codeword is minimized according to a modified ECC which is based on the default ECC.
2 . The method as claimed in claim 1 , wherein the modified ECC is modified from a Bose-Chaudhuri-Hocquenghem (BCH) code.
3 . The method as claimed in claim 1 , wherein the modified ECC is modified from a Hamming code.
4 . The method as claimed in claim 1 , wherein the modified ECC is modified from a (single-error correcting and double-error detecting) SECDED Hamming code.
5 . The method as claimed in claim 1 , wherein the modified ECC is modified from a Hsiao code.
6 . The method as claimed in claim 1 , wherein the modified ECC is modified from a Reed-Solomon code.
7 . The method as claimed in claim 1 , wherein modified ECC is a Lien code.
8 . The method as claimed in claim 1 , wherein the modified ECC is used in a counter.
9 . The method as claimed in claim 8 , wherein the counter is a Gray counter.
10 . The method as claimed in claim 1 , wherein in response to every message bit of the new codeword to be flipped once, either an average or a maximum number of parity bits flips of the new codeword is minimized according to a modified ECC which is based on the default ECC comprising:
adding parity bits to the default ECC as the modified ECC so that either an average or a maximum number of parity bits flips of the new codeword is minimized.
11 . A memory storage apparatus comprising:
a connection interface;
a memory array; and
a memory control circuit which comprises an ECC encoder and is coupled to the connection interface and the memory array, wherein the memory control circuit is configured for:
receiving, through the connection interface, a write command comprising a write address and a write data;
reading an existing codeword comprising a predetermined bit sequence;
encoding the write data into a new codeword based on a default ECC;
flipping at least one bit of the new codeword based on a number of bits required to be changed from the existing codeword to the new codeword; and
writing the new codeword into the memory array, wherein in response to every message bit of the new codeword to be flipped once, either an average or a maximum number of parity bits flips of the new codeword is minimized according to a modified ECC which is based on the default ECC.
12 . The apparatus as claimed in claim 11 , wherein the modified ECC is modified from a Bose-Chaudhuri-Hocquenghem (BCH) code.
13 . The apparatus as claimed in claim 11 , wherein the modified ECC is modified from a Hamming code.
14 . The apparatus as claimed in claim 11 , wherein the modified ECC is modified from a (single-error correcting and double-error detecting) SECDED Hamming code.
15 . The apparatus as claimed in claim 11 , wherein the modified ECC is modified from a Hsiao code.
16 . The apparatus as claimed in claim 11 , wherein the modified ECC is modified from a Reed-Solomon Code.
17 . The apparatus as claimed in claim 11 , wherein modified ECC is a Lien code.
18 . The apparatus as claimed in claim 11 , wherein the modified ECC is used in a counter.
19 . The apparatus as claimed in claim 18 , wherein the counter is a Gray counter.
20 . The apparatus as claimed in claim 19 , wherein the memory control circuit is configured for in response to every message bit of the new codeword to be flipped once, either an average or a maximum number of parity bits flips of the new codeword is minimized according to a modified ECC which is based on the default ECC comprising:
the memory control circuit is configured for in response to every message bit of the new codeword to be flipped once, parity bits are added to the default ECC as the modified ECC so that either an average or a maximum number of parity bits flips of the new codeword is minimized.