Faraday rotators of terbium oxyhydroxide
Terbium-based Faraday rotators, optical isolators incorporating the Faraday rotators, and methods for forming the Faraday rotators are described. Formation methods include hydrothermal growth methods for forming monolithic single crystals of TbO(OH) as Faraday rotator materials. TbO(OH) can also be used as a starting material in a hydrothermal growth method to form monolithic single crystals of Tb x Yb (2-x) O 3 , in which x is between about 0.05 and about 1 or terbium aluminum garnet TAG for use as a Faraday rotator in an optical isolator.
1. An optical isolator comprising:
a Faraday rotator, the Faraday rotator comprising a single, monolithic crystal comprising terbium oxyhydroxide, the Faraday rotator including a first face and a second opposite face;
a first light wave modifier adjacent the first face of the Faraday rotator; and
a second light wave modifier adjacent the second face of the Faraday rotator.
2. The optical isolator of claim 1 , wherein the first and second light wave modifiers are first and second polarizers or are first and second birefringent wedges.
3. The optical isolator of claim 2 , wherein the first and second polarizers are independently polarizing prisms, polarizing glass plates, or polarizing thin films.
4. The optical isolator of claim 1 , wherein the single, monolithic crystal has substantially no absorbance in a visible spectrum.
5. The optical isolator of claim 1 , wherein the Faraday rotator has a Verdet constant of from about 20 rad/T·m to about 200 rad/T·m at 1064 nm.
6. The optical isolator of claim 1 , wherein the Faraday rotator has a length along a light path of from about 1 cm to about 10 cm.
7. The optical isolator of claim 1 , further comprising an anti-reflection coating on the first face and the second face.
8. A method for forming the optical isolator of claim 1 comprising:
heating and pressurizing an aqueous solution held within a reactor to develop a temperature differential between a first zone of the reactor and a second zone of the reactor, the aqueous solution containing a mineralizer, the first zone of the reactor containing a terbium source, wherein upon the heating and pressurizing, growth of the monolithic crystal comprising terbium oxyhydroxide is initiated in the second zone of the reactor;
locating a first light wave modifier adjacent a first face of the monolithic crystal comprising terbium oxyhydroxide; and
locating a second light wave modifier adjacent a second opposite face of the monolithic crystal comprising terbium oxyhydroxide.
9. The method of claim 8 , further comprising cutting the crystal and/or polishing the first and second faces of the crystal prior to locating the first and second light wave modifiers adjacent the first and second faces of the terbium oxyhydroxide crystal.
10. The method of claim 8 , further comprising locating a seed terbium oxyhydroxide crystal in the reactor prior to the heating and pressurizing.
11. The method of claim 8 , wherein the terbium source comprises one or more of Tb 4 O 7 , Tb 2 O 3 , or Tb 6 O.
12. The method of claim 8 , wherein the mineralizer comprises potassium hydroxide at a concentration of from about 1 M to about 20 M.
13. The method of claim 8 , wherein the aqueous solution is pressurized to a pressure between about 12 kpsi and about 15 kpsi and is heated to a temperature between about 550° C. and about 750° C.
14. A method for forming the optical isolator of claim 1 comprising:
heating and pressurizing an aqueous solution held within a reactor to develop a temperature differential between a first zone of the reactor and a second zone of the reactor, the aqueous solution containing a mineralizer, the first zone of the reactor containing terbium oxyhydroxide, wherein upon the heating and pressurizing, growth of the monolithic crystal comprising terbium oxyhydroxide is initiated in the second zone of the reactor;
locating a first light wave modifier adjacent a first face of the monolithic crystal comprising terbium oxyhydroxide; and
locating a second light wave modifier adjacent a second opposite face of the monolithic crystal comprising terbium oxyhydroxide.
15. The method of claim 14 , the first zone comprising the terbium oxyhydroxide in a concentration between about 0.1 at. % and about 50 at. %.
16. The method of claim 14 , the first zone further containing an aluminum source.
17. The method of claim 14 , further comprising cutting the crystal and/or polishing the first and second faces of the crystal prior to locating the first and second light wave modifiers adjacent the first and second faces of the crystal.
18. The method of claim 14 , further comprising locating a seed crystal in the reactor prior to the heating and pressurizing.
19. The method of claim 14 , wherein the aqueous solution is pressurized to a pressure between about 12 kpsi and about 15 kpsi and is heated to a temperature between about 550° C. and about 750° C.