Optoelectronic device having an antireflective surface
View Patent ↗An optoelectronic device with an antireflective surface comprises a semiconductor substrate having a textured surface including a plurality of surface protrusions and/or indentations. A first electrode is in contact with the semiconductor substrate and spaced apart from a second electrode that is also in contact with the semiconductor substrate. The textured surface is fabricated by inverse metal-assisted chemical etching, and thus the semiconductor substrate is substantially devoid of ion-induced defects.
1. An optoelectronic device with an antireflective surface, the optoelectronic device comprising:
a semiconductor substrate comprising a textured surface including a plurality of surface protrusions and/or indentations;
a first electrode in contact with the semiconductor substrate; and
a second electrode in contact with the semiconductor substrate and spaced apart from the first electrode,
wherein the semiconductor substrate is substantially devoid of ion-induced defects, and
wherein the first and second electrodes comprise a patterned thin film having a thickness of about 100 nm or less.
2. The optoelectronic device of claim 1 , wherein the semiconductor substrate comprises a homojunction or a heterojunction.
3. The optoelectronic device of claim 1 , wherein the semiconductor substrate comprises a semiconductor selected from the group consisting of: gallium oxide and germanium.
4. The optoelectronic device of claim 1 , wherein the semiconductor substrate comprises germanium, and
wherein the semiconductor substrate further comprises an amorphous layer overlying a single crystal, both the amorphous layer and the single crystal comprising the germanium.
5. The optoelectronic device of claim 4 , wherein the amorphous layer is substantially devoid of oxygen, the amorphous layer consisting essentially of germanium.
6. The optoelectronic device of claim 1 , wherein the semiconductor substrate comprises gallium oxide, and
wherein the gallium oxide comprises β-Ga 2 O 3 .
7. The optoelectronic device of claim 6 , wherein the textured surface has an oxygen to gallium ratio of less than 1.5, the semiconductor substrate including a sub-oxide surface layer comprising β-Ga 2 O x , where x<3.
8. The optoelectronic device of claim 1 , wherein the plurality of surface protrusions and/or indentations are arranged in a periodic array.
9. The optoelectronic device of claim 8 , wherein the periodic array has one-dimensional periodicity, and the surface protrusions and/or indentations comprise grooves.
10. The optoelectronic device of claim 9 , wherein the grooves are substantially aligned along a crystallographic direction of the semiconductor substrate.
11. The optoelectronic device of claim 8 , wherein the periodic array has two-dimensional periodicity.
12. The optoelectronic device of claim 1 , wherein the surface protrusions and/or indentations comprise faceted sidewalls, each faceted sidewall being aligned with a crystallographic plane of the semiconductor substrate.
13. The optoelectronic device of claim 1 , wherein the surface protrusions and/or indentations comprise pyramidal structures or circular indentations.
14. The optoelectronic device of claim 1 , wherein the surface protrusions and/or indentations have a lateral size and spacing in a range from about 10 nm to about 5 microns.
15. The optoelectronic device of claim 1 being a photodetector or a solar cell.
16. The optoelectronic device of claim 15 being selected from the group consisting of a metal-semiconductor-metal photodetector and a vertical-type Schottky photodetector.
17. The optoelectronic device of claim 1 , wherein the first and second electrodes comprise an interdigitated configuration on the textured surface.
18. The optoelectronic device of claim 1 , wherein the textured surface comprises Ge and has a surface reflection of about 20% or less when exposed to light having a wavelength from about 1000 nm to about 1600 nm.
19. The optoelectronic device of claim 1 , wherein the textured surface comprises β-Ga 2 O 3 and has a surface reflection of about 15% or less when exposed to light at a wavelength in a range from 220 nm to about 300 nm.
20. An optoelectronic device with an antireflective surface, the optoelectronic device comprising:
a semiconductor substrate comprising a textured surface including a plurality of surface protrusions and/or indentations;
a first electrode in contact with the semiconductor substrate; and
a second electrode in contact with the semiconductor substrate and spaced apart from the first electrode,
wherein the semiconductor substrate is substantially devoid of ion-induced defects,
wherein the semiconductor substrate comprises gallium oxide, and wherein the gallium oxide comprises β-Ga 2 O 3 .
21. An optoelectronic device with an antireflective surface, the optoelectronic device comprising:
a semiconductor substrate comprising a textured surface including a plurality of surface protrusions and/or indentations;
a first electrode in contact with the semiconductor substrate; and
a second electrode in contact with the semiconductor substrate and spaced apart from the first electrode,
wherein the semiconductor substrate is substantially devoid of ion-induced defects,
wherein the semiconductor substrate comprises germanium, and wherein the semiconductor substrate further comprises an amorphous layer overlying a single crystal, both the amorphous layer and the single crystal comprising the germanium.