Semiconductor device and method of forming backside openings for an ultra-thin semiconductor die
A semiconductor substrate contains a plurality of openings extending partially into a surface of the semiconductor substrate. A conductive layer is formed with a first portion of the conductive layer over a remaining portion of the surface of the semiconductor substrate between the openings and a second portion of the conductive layer in the openings. The remaining portion of the surface of the semiconductor substrate is removed to lift-off the first portion of the conductive layer while leaving the second portion of the conductive layer in the openings. The semiconductor substrate is singulated to separate the semiconductor die leaving the second portion of the conductive layer over a surface of the semiconductor die. Alternatively, a plurality of openings is formed over each semiconductor die. A conductive layer is formed over a remaining portion of the surface of the semiconductor substrate between the openings and into the openings.
1. A semiconductor device, comprising:
a semiconductor substrate including a plurality of semiconductor die;
a plurality of openings formed over each semiconductor die and extending partially into a surface of the semiconductor substrate; and
a conductive layer formed over a remaining portion of the surface of the semiconductor substrate between the plurality of openings and into the plurality of openings;
wherein the plurality of openings formed over each semiconductor die is disposed in multiple offset rows.
2. The semiconductor device of claim 1 , wherein a boundary of the multiple offset rows over each semiconductor die corresponds to a boundary of a respective semiconductor die.
3. The semiconductor device of claim 1 , wherein the remaining portion of the surface includes a honeycomb pattern defining the plurality of openings as hexagonally shaped.
4. The semiconductor device of claim 1 , wherein the plurality of openings is limited to within a footprint of the plurality of semiconductor die.
5. The semiconductor device of claim 1 , wherein a thickness of the conductive layer is less than 1.5 micrometers.
6. The semiconductor device of claim 1 , wherein the semiconductor substrate includes a support ring formed around a perimeter of the semiconductor substrate.
7. A semiconductor device, comprising:
a semiconductor substrate including a semiconductor die formed in the semiconductor substrate;
a plurality of openings formed in a surface of the semiconductor substrate over the semiconductor die; and
a conductive layer formed over the surface of the semiconductor substrate between the respective openings of the plurality of openings;
wherein the plurality of openings is disposed in multiple offset rows.
8. The semiconductor device of claim 7 , wherein the conductive layer extends into each of the plurality of openings.
9. The semiconductor device of claim 7 , wherein each of the plurality of openings is hexagonally shaped to define a honeycomb pattern.
10. The semiconductor device of claim 7 , wherein the plurality of openings is limited to within a footprint of the semiconductor die.
11. The semiconductor device of claim 7 , wherein a thickness of the conductive layer is less than 1.5 micrometers.
12. The semiconductor device of claim 7 , further including a portion of the surface surrounding the semiconductor die and devoid of the plurality of openings.
13. A semiconductor device, comprising:
a semiconductor substrate including a semiconductor die formed in the semiconductor substrate; and
a plurality of openings formed in a surface of the semiconductor substrate over the semiconductor die;
wherein the plurality of openings is formed in a pattern.
14. The semiconductor device of claim 13 , further including a conductive layer formed over the surface of the semiconductor die.
15. The semiconductor device of claim 14 , wherein the conductive layer blankets the semiconductor substrate.
16. The semiconductor device of claim 14 , further including a contact pad formed over the semiconductor die opposite the conductive layer.
17. The semiconductor device of claim 13 , wherein the plurality of openings is formed in a honeycomb pattern.
18. The semiconductor device of claim 17 , wherein the honeycomb pattern is confined to a footprint of the semiconductor die.