Methods for optical dielectric waveguide subassembly structure
An optical subassembly includes a planar dielectric waveguide structure that is deposited at temperatures below 400 C. The waveguide provides low film stress and low optical signal loss. Optical and electrical devices mounted onto the subassembly are aligned to planar optical waveguides using alignment marks and stops. Optical signals are delivered to the submount assembly via optical fibers. The dielectric stack structure used to fabricate the waveguide provides cavity walls that produce a cavity, within which optical, optoelectronic, and electronic devices can be mounted. The dielectric stack is deposited on an interconnect layer on a substrate, and the intermetal dielectric can contain thermally conductive dielectric layers to provide pathways for heat dissipation from heat generating optoelectronic devices such as lasers.
1. A method comprising
forming a substrate;
forming an interconnection layer disposed on the substrate, wherein the interconnection layer comprises at least an interconnection line;
forming a waveguide on the interconnection layer,
wherein forming the waveguide comprises patterning a deposited core stack of SiON layers having a stress having a magnitude less than or equal to 20 MPa and an optical loss less than or equal to 1 dB/cm,
forming a first device aligned to the waveguide,
wherein the first device comprises at least a device terminal coupled to the interconnection line.
2. A method as in claim 1 further comprising
forming at least a second device under the interconnection layer,
coupling the interconnection line to the second device for communicating with the first device.
3. A method as in claim 1 further comprising
forming at least a second device on the interconnection layer,
coupling a device terminal of the second device to the interconnection line for communicating with the first device.
4. A method as in claim 1 further comprising
forming a high heat conduction layer under the first device for removing thermal energy from the first device.
5. A method as in claim 1 further comprising
controlling a stoichiometry of Si, O, and N of each layer of the stack to provide the stress with the magnitude less than or equal to 20 MPa.
6. A method as in claim 1 further comprising
controlling the patterning process to achieve a level of impurity, a level of homogeneity, or a uniformity for an optical loss of less than 1 dB/cm.
7. A method as in claim 1 further comprising
wherein a functionality of the substrate is susceptible to be degraded at temperatures greater than 400 C,
the method further comprising forming the waveguide at a temperature less than or equal to 400 C.
8. A method as in claim 1 further comprising
forming an entrance guide on the substrate for attaching a fiber coupled to the waveguide,
wherein the entrance guide is configured to match in dimensions to a guide of the device.
9. A method as in claim 1 further comprising
forming a spot size converter at an entrance or at an exit of the waveguide and aligned to the waveguide.
10. A method as in claim 1 further comprising
forming a lid disposed on the substrate for hermetically sealing the first device and a portion of the waveguide.
11. A method as in claim 1 further comprising
patterning the waveguide to form a filter, an arrayed waveguide, a grating, a multiplexer, a demultiplexer, a spot size converter, or a power combiner.