Fan-out semiconductor package

1. A fan-out semiconductor package comprising:

a core member comprising:

a through-hole;

a recess portion, the recess portion having a depth penetrating through the core member that is less than a depth of the through-hole penetrating through the core member; and

a barrier layer disposed as a stopper layer of the recess portion;

a semiconductor chip disposed in the through-hole of the core member, the semiconductor chip comprising:

an active surface having connection pads disposed thereon; and

an inactive surface opposing the active surface;

an encapsulant covering at least portions of the core member and the semiconductor chip and filling at least portions of the through-hole and at least a portion of the recess portion from the barrier layer towards the inactive surface; and

a connection member disposed on the core member and the active surface of the semiconductor chip, the connection member comprising a redistribution layer electrically connected to the connection pads,

wherein a first surface of the recess portion is closed by the barrier layer formed in the core member and a second surface of the recess portion opposing the first surface is opened, and

the barrier layer is a conductive layer.

2. The fan-out semiconductor package of claim 1 , wherein walls of the recess portion have a gradient of an acute angle.

3. The fan-out semiconductor package of claim 1 , wherein the core member further comprises a plurality of wiring layers electrically connected to the connection pads through the redistribution layer.

4. The fan-out semiconductor package of claim 3 , wherein the first surface of the recess portion is closed by the barrier layer, the barrier layer having a surface coplanar with a surface of one of the plurality of wiring layers, and

the second surface of the recess portion opposing the first surface is opened, through which the encapsulant fills the portion of the recess portion.

5. The fan-out semiconductor package of claim 3 , wherein the core member further comprises:

a first insulating layer;

a first wiring layer disposed on a first surface of the first insulating layer; and

a second wiring layer disposed on a second surface of the first insulating layer,

wherein the first wiring layer and the second wiring layer are electrically connected to each other, and

wherein the first wiring layer and the second wiring layer are electrically connected to the connection pads.

6. The fan-out semiconductor package of claim 5 , wherein the core member further comprises:

a second insulating layer disposed on the first surface of the first insulating layer and covering the first wiring layer;

a third wiring layer disposed on the second insulating layer;

a third insulating layer disposed on the second surface of the first insulating layer and covering the second wiring layer; and

a fourth wiring layer disposed on the third insulating layer,

wherein the first wiring layer, the second wiring layer, the third wiring layer, and the fourth wiring layer are electrically connected to each other, and

wherein the first wiring layer, the second wiring layer, the third wiring layer, and the fourth wiring layer are electrically connected to the connection pads.

7. The fan-out semiconductor package of claim 6 , wherein the recess portion penetrates through the first insulating layer and the third insulating layer.

8. The fan-out semiconductor package of claim 3 , wherein the core member further comprises:

a first insulating layer;

a first wiring layer embedded in the first insulating layer so that a first surface of the first insulating layer is exposed;

a second wiring layer disposed on a second surface of the first insulating layer opposing the first surface of the first insulating layer in which the first wiring layer is embedded;

a second insulating layer disposed on the first insulating layer and covering the second wiring layer; and

a third wiring layer disposed on the second insulating layer,

wherein the first wiring layer, the second wiring layer, and the third wiring layer are electrically connected to each other, and

wherein the first wiring layer, the second wiring layer, and the third wiring layer are electrically connected to the connection pads.

9. The fan-out semiconductor package of claim 8 , wherein the recess portion penetrates through the first insulating layer and the second insulating layer.

10. The fan-out semiconductor package of claim 8 , wherein the core member further comprises:

a third insulating layer disposed on the second insulating layer and covering the third wiring layer; and

a fourth wiring layer disposed on the third insulating layer,

wherein the first wiring layer, the second wiring layer, the third wiring layer, and the fourth wiring layer are electrically connected to each other, and

wherein the first wiring layer, the second wiring layer, the third wiring layer, and the fourth wiring layer are electrically connected to the connection pads.

11. The fan-out semiconductor package of claim 10 , wherein the recess portion penetrates through the second insulating layer and the third insulating layer.

12. The fan-out semiconductor package of claim 3 , further comprising:

a backside wiring layer disposed on the encapsulant; and

backside vias penetrating through at least portions of the encapsulant and connected to at least one wiring layer from among the plurality of wiring layers of the core member.

13. The fan-out semiconductor package of claim 1 , further comprising:

a passivation layer disposed on the connection member and having openings exposing at least portions of the redistribution layer of the connection member;

underbump metal layers disposed in the openings of the passivation layer and connected to the at least portions of the redistribution layer; and

electrical connection structures disposed on the passivation layer and connected to the underbump metal layers.

14. The fan-out semiconductor package of claim 13 , further comprising a surface mounting component disposed on the passivation layer and electrically connected to the redistribution layer of the connection member.

15. The fan-out semiconductor package of claim 1 , wherein a side surface of an insulating layer of the core member exposed by the recess portion is in direct contact with the encapsulant.

16. The fan-out semiconductor package of claim 1 , wherein the core member further comprises a plurality of wiring layers electrically connected to the connection pads through the redistribution layer,

wherein the first surface of the recess portion is closed by a conductive pattern electrically isolated from the plurality of wiring layers, and

wherein the second surface of the recess portion opposing the first surface is opened, through which the encapsulant fills the portion of the recess portion.

17. The fan-out semiconductor package of claim 1 , wherein the first surface of the recess portion is closed by a conductive pattern, the conductive pattern being a ground pattern or a power pattern, and

wherein the second surface of the recess portion opposing the first surface is opened, through which the encapsulant fills the portion of the recess portion.

18. The fan-out semiconductor package of claim 1 , wherein the recess portion is disposed in a region of the core member between the through-hole and a region of the core member in which a via is disposed.