Light-emitting structure having a plurality of light-emitting structure units

1. A light emitting device, comprising:

a substrate, comprising a top surface;

a first light-emitting structure unit and a second light-emitting structure unit disposed on the top surface, the first light-emitting structure unit and the second light-emitting structure unit being spaced apart from each other, wherein each of the first light-emitting structure unit and the second light-emitting structure unit comprises a lower layer having a first conductivity and an upper layer having a second conductivity;

a trench between the first light-emitting structure unit and the second light-emitting structure unit, comprising a bottom portion which is a part of the top surface;

an isolation layer, disposed on the trench and directly contacting the bottom portion; and

an electrical connection, disposed on the isolation layer and electrically connecting the first light-emitting structure unit and the second light-emitting structure unit;

wherein:

the lower layer comprises an inclined sidewall and the electrical connection physically contacts the inclined sidewall, and

the isolation layer is between the bottom portion and the electrical connection.

2. The light emitting device of claim 1 , wherein the isolation layer is disposed on the upper layer of the second light-emitting structure unit.

3. The light emitting device of claim 2 , further comprising a current spreading layer disposed on the isolation layer on the upper layer of the second light-emitting structure unit.

4. The light emitting device of claim 2 , wherein the isolation layer comprises a side surface and a bottom surface facing the second light-emitting unit, and wherein an included angle of the bottom surface and the side surface is an acute angle in a cross-sectional view.

5. The light emitting device of claim 1 , wherein the electrical connection contacts a top surface of the lower layer of the first light-emitting structure unit.

6. The light emitting device of claim 1 , wherein the upper layer and the lower layer are formed on the substrate by epitaxial growth.

7. The light emitting device of claim 1 , wherein the electrical connection comprises a bridging structure and a joining structure, and the bridging structure has a width larger than that of the joining structure.

8. The light emitting device of claim 7 , wherein the bridging structure has the width of 5 μm˜50 μm.

9. The light emitting device of claim 7 , wherein the joining structure has the width of 3 μm˜15 μm.

10. The light emitting device of claim 7 , wherein the electrical connection comprises a taper segment connecting the bridging structure and the joining structure.

11. The light emitting device of claim 1 , wherein the trench has a cross-sectional profile of a rounded edge or a chamfered edge.

12. The light emitting device of claim 11 , wherein the rounded edge or the chamfered edge is formed on the lower layer of the first light-emitting structure unit and/or is formed on the lower layer of the second light-emitting structure unit.

13. The light emitting device of claim 11 , wherein the rounded edge has a radius not less than 1 μm.

14. The light emitting device of claim 1 , wherein the inclined sidewall of the lower layer of the first light-emitting structure unit faces the second structure light-emitting unit, and the lower layer of the first light-emitting structure unit comprises another sidewall not facing the second structure light-emitting unit, wherein the another sidewall is steeper than the inclined sidewall.

15. A light emitting device, comprising:

a substrate, comprising a top surface;

a first light-emitting structure unit and a second light-emitting structure unit disposed on the top surface, the first light-emitting structure unit and the second light-emitting structure unit being spaced apart from each other, wherein each of the first light-emitting structure unit and the second light-emitting structure unit comprises a lower layer having a first conductivity and an upper layer having a second conductivity;

a trench between the first light-emitting structure unit and the second light-emitting structure unit, comprising a bottom portion which is a part of the top surface;

an isolation layer, disposed on the trench and covering the bottom portion; and

an electrical connection, electrically connecting the first light-emitting structure unit and the second light-emitting structure unit;

wherein the lower layer comprises an inclined sidewall and the electrical connection physically contacts the inclined sidewall, and

wherein the electrical connection comprises a bridging structure and a joining structure, and the bridging structure has a width larger than that of the joining structure.

16. The light emitting device of claim 15 , wherein the isolation layer is disposed on the upper layer of the second light-emitting structure unit and the light emitting device further comprises a current spreading layer disposed on the isolation layer on the upper layer of the second light-emitting structure unit.

17. The light emitting device of claim 15 , wherein the bridging structure is disposed on the isolation layer on the trench.

18. The light emitting device of claim 15 , wherein the inclined sidewall of the lower layer of the first light-emitting structure unit faces the second structure light-emitting unit, and the lower layer of the first light-emitting structure unit comprises another sidewall not facing the second structure light-emitting unit, wherein the another sidewall is steeper than the inclined sidewall.