Micro light emitting diode structure and method for manufacturing micro light emitting diode
A micro light emitting diode includes a die-bonding substrate, an adhesive layer, an undoped III-V group semiconductor layer, an N-type III-V group semiconductor layer, a light emitting layer, and a P-type III-V group semiconductor layer. The adhesive layer is disposed on the die-bonding substrate. The undoped III-V group semiconductor layer is disposed on the adhesive layer, and the adhesive layer is between the die-bonding substrate and the undoped III-V group semiconductor layer. The N-type III-V group semiconductor layer is disposed on the undoped III-V group semiconductor layer. The light emitting layer is disposed on the N-type III-V group semiconductor layer. The P-type III-V group semiconductor layer is disposed on the N-type III-V group semiconductor layer, and the light emitting layer is between the N-type III-V group semiconductor layer and the P-type III-V group semiconductor layer.
1. A micro light emitting diode structure, comprising:
a die-bonding substrate;
an adhesive layer disposed on the die-bonding substrate;
an undoped III-V group semiconductor layer in contact with a top surface of the adhesive layer, the adhesive layer disposed between the die-bonding substrate and the undoped III-V group semiconductor layer;
an N-type III-V group semiconductor layer disposed on the undoped III-V group semiconductor layer;
a light emitting layer disposed on the N-type III-V group semiconductor layer;
a P-type III-V group semiconductor layer disposed on the N-type III-V group semiconductor layer, wherein the light emitting layer is disposed between the N-type III-V group semiconductor layer and the P-type III-V group semiconductor layer; and
an insulating layer covering at least a side wall of the undoped III-V group semiconductor layer, a side wall of the N-type III-V group semiconductor layer, a side wall of the light emitting layer, and a side wall of the P-type III-V group semiconductor layer, wherein the insulating layer has an extension portion extending from a junction of the side wall of the undoped III-V group semiconductor layer and the adhesive layer, and the extension portion is in contact with the top surface of the adhesive layer.
2. The micro light emitting diode structure of claim 1 , wherein the undoped III-V group semiconductor layer, the N-type III-V group semiconductor layer, the light emitting layer, and the P-type III-V group semiconductor layer collectively have a total thickness ranged from about 1 um to about 5 um.
3. The micro light emitting diode structure of claim 1 , wherein the insulating layer has a thickness ranged from about 500 Å to about 10000 Å.