Semiconductor device and method of forming curved image sensor region robust against buckling
View Patent ↗A semiconductor wafer has a plurality of non-rectangular semiconductor die with an image sensor region. The non-rectangular semiconductor die has a circular, elliptical, and shape with non-linear side edges form factor. The semiconductor wafer is singulated with plasma etching to separate the non-rectangular semiconductor die. A curved surface is formed in the image sensor region of the non-rectangular semiconductor die. The non-rectangular form factor effectively removes a portion of the base substrate material in a peripheral region of the semiconductor die to reduce stress concentration areas and neutralize buckling in the curved surface of the image sensor region. A plurality of openings or perforations can be formed in a peripheral region of a rectangular or non-rectangular semiconductor die to reduce stress concentration areas and neutralize buckling. A second semiconductor die can be formed in an area of the semiconductor wafer between the non-rectangular semiconductor die.
1. A semiconductor die, comprising:
a base substrate material including a side edge, wherein the side edge is non-linear, the base substrate material comprising a first side and a second side with a thickness between the first side and the second side, the base substrate material forming a surface;
an opening or perforation formed through the thickness in the base substrate material adjacent to the side edge;
wherein the surface of the base substrate material forms a curved surface out to the side edge.
2. The semiconductor die of claim 1 , further including an image sensor region formed in the base substrate material.
3. The semiconductor die of claim 1 , wherein the side edge is concave.
4. The semiconductor die of claim 1 , wherein the side edge is convex.
5. The semiconductor die of claim 1 , further including a substrate comprising a recess, wherein the curved surface extends in parallel with a surface of the substrate within the recess.
6. The semiconductor die of claim 5 , wherein the semiconductor die contacts the curved surface for an entire width of the semiconductor die.
7. The semiconductor die of claim 5 , further including an epoxy disposed between the base substrate material and the substrate.
8. A semiconductor die, comprising:
a base substrate material including a side edge, the base substrate material comprising a first side and a second side with a thickness between the first side and the second side, the base substrate material forming a surface;
a plurality of openings or perforations formed through the thickness of the base substrate material adjacent to the side edge;
wherein the surface of the base substrate material forms a curved surface out to the side edge.
9. The semiconductor die of claim 8 , further including an image sensor region formed in the base substrate material.
10. The semiconductor die of claim 8 , wherein the side edge is concave.
11. The semiconductor die of claim 8 , wherein the side edge is convex.
12. The semiconductor die of claim 8 , further including a substrate comprising a recess, wherein the curved surface extends in parallel with a surface of the substrate within the recess.
13. The semiconductor die of claim 12 , wherein the semiconductor die contacts the curved surface for an entire width of the semiconductor die.
14. The semiconductor die of claim 12 , further including an epoxy disposed between the base substrate material and the substrate.
15. A semiconductor die, comprising:
a base substrate material including four side edges, wherein each side edge of the four side edges is non-linear, the base substrate material comprising a first side and a second side with a thickness between the first side and the second side, the base substrate material forming a surface;
wherein the surface of the base substrate material forms a curved surface out to each side edge.
16. The semiconductor device of claim 15 , wherein the semiconductor die is non-rectangular.
17. The semiconductor device of claim 15 , wherein the side edges are concave.
18. The semiconductor device of claim 15 , wherein the non-rectangular semiconductor die includes a circular or elliptical shape.
19. The semiconductor device of claim 15 , further including a plurality of openings or perforations formed in the semiconductor die.
20. The semiconductor device of claim 15 , further including a substrate comprising a recess, wherein the semiconductor die extends into the recess.