Semiconductor device
According to an embodiment, a semiconductor device includes a substrate, a connector, a volatile semiconductor memory element, multiple nonvolatile semiconductor memory elements, and a controller. A wiring pattern includes a signal line that is formed between the connector and the controller and that connects the connector to the controller. On the opposite side of the controller to the signal line, the multiple nonvolatile semiconductor memory elements are aligned along the longitudinal direction of the substrate.
1. A semiconductor device comprising:
a first nonvolatile semiconductor element;
a second nonvolatile semiconductor element;
a resistive element;
a controller that controls the first nonvolatile semiconductor element and the second nonvolatile semiconductor element;
a first signal line that connects the controller to the resistive element;
a second signal line that connects the resistive element to the first nonvolatile semiconductor element;
a third signal line that branches from the second signal line, the third signal line being connected to the second nonvolatile semiconductor element, at least one of the second signal line and the third signal line including a signal line formed on a first wiring layer and a signal line formed on a second wiring layer;
a connector that allows connection to an external device; and
a substrate on which the first nonvolatile semiconductor element, the second nonvolatile semiconductor element, the resistive element, the controller, and the connector are mounted, the first nonvolatile semiconductor element and the second nonvolatile semiconductor element being disposed symmetrically on opposite sides of the substrate, the substrate including:
a front surface layer that includes a wiring pattern formed on a front surface of the substrate, the front surface layer being a layer on which the first nonvolatile semiconductor element and the resistive element are mounted,
a rear surface layer that includes a wiring pattern formed on a rear surface of the substrate, the rear surface layer being a layer on which the second nonvolatile semiconductor element is mounted, and
a plurality of internal wiring layers that is provided between the front surface layer and the rear surface layer, the plurality of internal wiring layers including a wiring pattern, the first wiring layer being one of the plurality of internal wiring layers, the second wiring layer being one of the plurality of internal wiring layers, the second wiring layer being a different wiring layer from the first wiring layer.
2. The semiconductor device according to claim 1 , wherein
at least one of the second signal line and the third signal line includes a part that extends almost perpendicular to the front surface of the substrate to connect the signal line formed on the first wiring layer and the signal line formed on the second wiring layer.
3. The semiconductor device according to claim 1 , wherein
the substrate includes a first edge and a second edge, the second edge being perpendicular to the first edge in a plan view,
the connector is provided on the first edge of the substrate, and
the first nonvolatile semiconductor element and the second nonvolatile semiconductor element are provided adjacent to the connector with the controller interposed therebetween in a plan view.
4. The semiconductor device according to claim 2 , wherein
the substrate includes a first edge and a second edge, the second edge being perpendicular to the first edge in a plan view,
the connector is provided on the first edge of the substrate, and
the first nonvolatile semiconductor element and the second nonvolatile semiconductor element are provided adjacent to the connector with the controller interposed therebetween in a plan view.
5. The semiconductor device according to claim 3 , further comprising:
a volatile semiconductor element that is provided on the same side as the connector relative to the first nonvolatile semiconductor element in a plan view.
6. The semiconductor device according to claim 1 , further comprising:
a temperature sensor mounted on the front surface layer.
7. The semiconductor device according to claim 2 , further comprising:
a temperature sensor mounted on the front surface layer.
8. The semiconductor device according to claim 3 , further comprising:
a temperature sensor mounted on the front surface layer.
9. The semiconductor device according to claim 4 , further comprising:
a temperature sensor mounted on the front surface layer.
10. The semiconductor device according to claim 1 , wherein
the first signal line includes a first part, a second part, and a third part,
the first part is formed on the front surface layer,
the second part is formed on the rear surface layer, and
the third part extends almost perpendicular to the front surface of the substrate to connect the first part and the second part.
11. The semiconductor device according to claim 1 , wherein
the number of layers in the substrate is eight.
12. The semiconductor device according to claim 2 , wherein
the number of layers in the substrate is eight.
13. The semiconductor device according to claim 3 , wherein
the number of layers in the substrate is eight.
14. The semiconductor device according to claim 4 , wherein
the number of layers in the substrate is eight.
15. The semiconductor device according to claim 5 , wherein
the number of layers in the substrate is eight.
16. The semiconductor device according to claim 1 , wherein
the first nonvolatile semiconductor element determines whether to operate in response to a signal from the second signal line on the basis of a chip enable signal of the first nonvolatile semiconductor element.
17. The semiconductor device according to claim 1 , wherein
the first nonvolatile semiconductor element and the second nonvolatile semiconductor element are configured to be operable independently of one another depending on whether either a chip enable signal of the first nonvolatile semiconductor element or a chip enable signal of the second nonvolatile semiconductor element is active.
18. The semiconductor device according to claim 1 , wherein
the first nonvolatile semiconductor element and the second nonvolatile semiconductor element are NAND-type flash memories.
19. The semiconductor device according to claim 1 , further comprising:
a power supply circuit that is mounted on the substrate, wherein
the power supply circuit is configured to generate internal voltages on the basis of power supplied from the outside via the connector and to supply the generated internal voltages to the first nonvolatile semiconductor element and the second nonvolatile semiconductor element.
20. The semiconductor device according to claim 19 , wherein
the connector is connectable to a host, and
the connector supplies power input from the host to the power supply circuit.