Semiconductor device and method for manufacturing the same
A semiconductor device includes a semiconductor element, a mount portion, and a sintered metal bond. The semiconductor element includes a body and an electrode pad. The body has an obverse surface facing forward in a first direction and a reverse surface facing rearward in the first direction. The electrode pad covers the element reverse surface. The mount portion supports the semiconductor element. The sintered metal bond electrically bonds the electrode pad and the mount portion. The sintered metal bond includes a first rear edge and a first front edge spaced forward in the first direction from the first rear edge. The electrode pad includes a second rear edge and a second front edge spaced forward in the first direction from the second rear edge. The first front edge of the metal bond is spaced rearward in the first direction from the second front edge of the pad.
1. A semiconductor device comprising:
a semiconductor element including an element body and an electrode pad, the element body having an element obverse surface facing forward in a first direction and an element reverse surface facing rearward in the first direction, the electrode pad covering the element reverse surface;
an element mount portion supporting the semiconductor element;
a sintered metal bond that electrically bonds the electrode pad and the element mount portion,
wherein the sintered metal bond includes a first rear edge and a first front edge that is spaced forward in the first direction from the first rear edge, the electrode pad includes a second rear edge and a second front edge that is spaced forward in the first direction from the second rear edge, and the first front edge of the sintered metal bond is spaced rearward in the first direction from the second front edge of the electrode pad,
the semiconductor element includes an element side surface facing in a second direction perpendicular to the first direction,
the electrode pad includes a first covering portion and a second covering portion, the first covering portion covering the element reverse surface, the second covering portion extending forward in the first direction from the first covering portion along the element side surface,
the element side surface includes an element side surface flat portion and an element side surface recess recessed inward of the element body relative to the element side surface flat portion,
the second covering portion covers a part of the element side surface flat portion and an entirety of the element side surface recess, and the second covering portion is held in direct contact with the sintered metal bond.
2. The semiconductor device according to claim 1 , further comprising a plating layer formed on the element mount portion, wherein the plating layer contains silver.
3. The semiconductor device according to claim 1 , wherein the sintered metal bond comprises porous sintered silver.
4. The semiconductor device according to claim 1 , wherein the semiconductor element is made of silicon.
5. The semiconductor device according to claim 1 , further comprising a lead frame, wherein the element mount portion is formed by a part of the lead frame.
6. The semiconductor device according to claim 1 , further comprising a resin package that covers the semiconductor element and the sintered metal bond.
7. The semiconductor device according to claim 1 , wherein the semiconductor element comprises an IGBT or a power MOSFET.
8. The semiconductor device according to claim 1 , wherein the sintered metal bond is a single layer disposed between the electrode pad and a plating layer.
9. The semiconductor device according to claim 1 , wherein the element side surface recess is directly connected to the element reverse surface.
10. The semiconductor device according to claim 1 , wherein the element side surface recess includes two edges that are spaced apart from each other in the first direction, each of the two edges being connected to the element side surface flat portion.