Manufacturing method of magneto-resistive effect device

1. A manufacturing method of a magneto-resistive effect device, the manufacturing method comprising steps of:

forming an Mg film on a substrate on which a reference layer is formed, and oxidizing the Mg film to form an MgO layer on the reference layer;

heating the substrate on which the MgO layer is formed;

forming an Mg layer on the MgO layer after the step of heating;

cooling the substrate on which the Mg layer is formed;

forming a first free layer on the Mg layer in a state where the substrate is cooled by the cooling step; and

forming a second free layer on the first free layer at a room temperature after the step of cooling,

wherein the step of forming the Mg layer, the step of cooling, and the step of forming the first free layer are performed in the same process chamber, and the step of forming the second free layer is performed in a process chamber that is different from the same process chamber.

2. The manufacturing method of the magneto-resistive effect device according to claim 1 ,

wherein the same process chamber comprises an Mg target used for forming the Mg layer, a magnetic material target used for forming the first free layer, and a substrate holder on which the substrate is mounted,

wherein a substrate mounting surface of the substrate holder has such a shape that a gap is formed between the substrate and the substrate mounting surface in a state where the substrate is mounted, the substrate holder is configured to select a cooling mode for introducing a cooling gas into the gap to cool the substrate or a non-cooling mode for introducing no cooling gas into the gap not to cool the substrate,

wherein the step of forming the Mg layer is performed in the non-cooling mode, and

wherein the step of cooling is performed in the cooling mode.