Semiconductor memory device and method of operating the same

1. A method of operating a semiconductor memory device to program a selected physical page of the semiconductor memory device, the method comprising performing a plurality of program loops,

wherein each of the program loops comprises:

applying a bit line voltage based on data input to a page buffer of the semiconductor memory device;

applying a two-step program pulse to a word line coupled to the selected physical page;

performing a program verify operation on the selected physical page using a double verify scheme; and

determining a bit line voltage to be applied in a subsequent program loop based on a result of the program verify operation,

wherein the performing of the program verify operation on the selected physical page using the double verify scheme comprises:

applying a verify voltage to the word line, the verify voltage corresponding to at least one program state, and performing an auxiliary verify operation using an auxiliary evaluation time; and

applying the verify voltage to the word line, and performing a main verify operation using a main evaluation time, and

wherein the auxiliary evaluation time is shorter than the main evaluation time.

2. The method of claim 1 , wherein the applying of the bit line voltage based on the data input to the page buffer comprises:

applying a program allowable voltage to a bit line coupled to a target memory cell to be programmed; and

applying a program inhibit voltage to a bit line coupled to a program inhibit memory cell.

3. The method of claim 1 , wherein the determining of the bit line voltage to be applied in the subsequent program loop based on the result of the program verify operation comprises:

determining whether a threshold voltage of a memory cell in the selected physical page is less than an auxiliary verify voltage corresponding to the auxiliary evaluation time; and

determining whether the threshold voltage of the memory cell in the selected physical page is less than a main verify voltage corresponding to the main evaluation time.

4. The method of claim 3 , wherein, when the threshold voltage of the memory cell is less than the auxiliary verify voltage, a first program allowable voltage is determined to be a voltage to be applied to a bit line coupled to the memory cell in the subsequent program loop.

5. The method of claim 4 , wherein, when the threshold voltage of the memory cell is equal to or greater than the auxiliary verify voltage and less than the main verify voltage, a second program allowable voltage greater than the first program allowable voltage is determined to be the voltage to be applied to the bit line coupled to the memory cell in the subsequent program loop.

6. The method of claim 5 , wherein, when the threshold voltage of the memory cell is greater than the main verify voltage, a program inhibit voltage is determined to be the voltage to be applied to the bit line coupled to the memory cell in the subsequent program loop.

7. The method of claim 4 , wherein the first program allowable voltage is a ground voltage.

8. A semiconductor memory device comprising:

a memory cell array including a plurality of physical pages;

a peripheral circuit configured to perform a program operation on a selected physical page among the plurality of physical pages, the program operation including a plurality of program loops; and

a control logic configured to control the program operation of the peripheral circuit,

wherein, during a program loop of the program operation of the selected physical page, the control logic controls the peripheral circuit to apply a two-step program pulse to a word line coupled to the selected physical page and perform a program verify operation on the selected physical page using a double verify scheme, and

wherein, to perform the program verify operation on the selected physical page using the double verify scheme, the control logic controls the peripheral circuit to apply a verify voltage corresponding to at least one program state to the word line for an auxiliary evaluation time, and apply the verify voltage to the word line for a main evaluation time longer than the auxiliary evaluation time.

9. The semiconductor memory device of claim 8 , wherein, when a threshold voltage of a memory cell in the selected physical page is less than an auxiliary verify voltage corresponding to the auxiliary evaluation time, the control logic determines a first program allowable voltage to be a voltage to be applied to a bit line coupled to the memory cell in a subsequent program loop.

10. The semiconductor memory device of claim 9 , wherein, when the threshold voltage of the memory cell is equal to or greater than the auxiliary verify voltage and less than a main verify voltage corresponding to the main evaluation time, the control logic determines a second program allowable voltage to be the voltage to be applied to the bit line coupled to the memory cell in the subsequent program loop, the second program allowable voltage being greater than the first program allowable voltage.

11. The semiconductor memory device of claim 10 , wherein, when the threshold voltage of the memory cell is greater than the main verify voltage, the control logic determines a program inhibit voltage to be the voltage to be applied to the bit line coupled to the memory cell in the subsequent program loop.

12. The semiconductor memory device of claim 9 , wherein the first program allowable voltage is a ground voltage.