Semiconductor device and a method for fabricating the same
A semiconductor device includes a source/drain region, a source/drain silicide layer formed on the source/drain region, and a first contact disposed over the source/drain silicide layer. The first contact includes a first metal layer, an upper surface of the first metal layer is at least covered by a silicide layer, and the silicide layer includes a same metal element as the first metal layer.
1. A semiconductor device including a field effect transistor, comprising:
a source/drain region;
a source/drain silicide layer formed on the source/drain region;
an interlayer dielectric layer;
a first contact disposed in the interlayer dielectric layer over the source/drain silicide layer; and
a second contact disposed over the first contact, wherein:
the first contact includes a first metal layer and an adhesive layer disposed between the first metal layer and the interlayer dielectric layer,
an upper surface of the first metal layer is covered by a silicide layer,
a side face of the silicide layer is covered by the adhesive layer,
the silicide layer includes a same metal element as the first metal layer, and
the second contact partially penetrates in the silicide layer such that a bottom of the second contact is located at a middle of the silicide layer.
2. The semiconductor device of claim 1 , wherein:
the adhesive layer is disposed between the first metal layer and the source/drain silicide layer.
3. The semiconductor device of claim 1 ,
wherein the silicide layer protrudes above an upper surface of the interlayer dielectric layer.
4. The semiconductor device of claim 1 , wherein the silicide layer is made of Co silicide and the first metal layer is made of Co.
5. The semiconductor device of claim 1 , further comprising:
an insulating layer in contact with an upper surface of the silicide layer and the dielectric layer,
wherein the insulating layer is made of a different material than the dielectric layer.
6. The semiconductor device of claim 5 , wherein the insulating layer includes at least one selected from the group consisting of SiN, SiC, SiCN and SiON.
7. A semiconductor device including a field effect transistor, comprising:
a first interlayer dielectric layer;
a first contact embedded in the first interlayer dielectric layer and disposed over a underlying conductive layer;
an adhesive layer disposed between the first contact and the underlying conductive layer;
a first silicide layer covering an upper surface of the first metal layer;
an insulating layer disposed over the first interlayer dielectric layer;
a second interlayer dielectric layer disposed over the insulating layer; and
a second contact embedded in the first interlayer dielectric layer and in contact with at least one of the silicide layer and the first contact, wherein:
the silicide layer includes a same metal element as the first metal layer,
a side face of the silicide layer is covered by the adhesive layer, and
the second contact passes through the insulating layer and partially penetrates in the silicide layer such that a bottom of the second contact is located at a middle of the silicide layer.
8. The semiconductor layer of claim 7 , wherein the second contact passes through the insulating layer and is in contact with an upper surface of the silicide layer.
9. The semiconductor layer of claim 7 , wherein the silicide layer covers an entirely of an upper surface of the first contact.
10. The semiconductor device of claim 7 , wherein the silicide layer is made of Co silicide and the first metal layer is made of Co.
11. The semiconductor device of claim 7 , wherein:
the insulating layer covers an upper surface of the silicide layer and the first interlayer dielectric layer, and
the insulating layer is made of a different material than the first and second interlayer dielectric layers.
12. The semiconductor device of claim 11 , wherein the insulating layer includes at least one selected from the group consisting of SiN, SiC, SiCN and SiON.
13. A semiconductor device including a field effect transistor, comprising:
a first contact disposed over a conductive portion formed over a substrate and embedded in an inter layer dielectric layer;
an adhesive layer disposed between the interlayer dielectric layer and the first contact; and
a second contact disposed over the first contact, wherein:
the first contact includes a first metal layer,
an upper surface of the first metal layer is covered by a silicide layer,
a side face of the silicide layer is covered by the adhesive layer,
the silicide layer includes a same metal element as the first metal layer, and
the second contact partially penetrates in the silicide layer such that a bottom of the second contact is located at a middle of the silicide layer.
14. The semiconductor device of claim 13 , wherein the adhesive layer includes a TiN layer formed on a Ti layer.
15. The semiconductor device of claim 13 , wherein the adhesive layer cover side faces of the silicide layer.
16. The semiconductor device of claim 13 , wherein the silicide layer is made of Co silicide and the first metal layer is made of Co.