Memory system
According to one embodiment, a memory system includes a semiconductor memory and a controller. The semiconductor memory includes blocks each containing memory cells. The controller is configured to instruct the semiconductor memory to execute a first operation and a second operation. In the first operation and the second operation, the semiconductor memory selects at least one of the blocks, and applies at least one voltage to all memory cells contained in said selected blocks. A number of blocks to which said voltage is applied per unit time in the second operation is larger than that in the first operation.
1. A memory system comprising:
a semiconductor memory including blocks each containing memory cells, and
a controller configured to instruct the semiconductor memory to execute a first operation and a second operation, wherein
in the first operation and the second operation, the semiconductor memory selects at least one of the blocks, and applies at least one voltage to all memory cells contained in said selected blocks,
a number of blocks to which said voltage is applied per unit time in the second operation is larger than that in the first operation,
the memory system is configured to operate in a first mode in which the first operation and the second operation are executable, and in a second mode in which power consumption is lower than in the first mode, and
the controller is configured to:
set a length of a patrol period;
cause the memory system to transition from the second mode to the first mode on the basis of the patrol period elapsing while the memory system operates in the second mode; and
instruct the semiconductor memory to execute the first operation or the second operation.
2. The memory system of claim 1 , wherein
a number of the blocks to which said voltage is applied in one execution of the second operation is larger than a number of the blocks to which said voltage is applied in one execution of the first operation.
3. The memory system of claim 2 , wherein
a processing time for one execution of the second operation is longer than a processing time for one execution of the first operation.
4. The memory system of claim 2 , wherein
the controller is configured to instruct to the semiconductor memory the number of blocks to which said voltage is applied in one execution of the second operation, on the basis of a number of commands queued, the commands having been received from an external host apparatus.
5. The memory system of claim 1 , herein
the controller is further configured to:
manage an address conversion table to convert a logical address associated with data stored in a block into a physical address of the semiconductor memory,
store the address conversion table in the semiconductor memory,
determine a length of a patrol period, and
instruct, in the patrol period, the first operation or the second operation to all blocks in which at least one piece of valid user data is stored, or all blocks in which the address conversion table is stored.
6. The memory system of claim 5 , wherein
the controller is configured to set a first period as the length of the patrol period in a case where a temperature of the memory system is a first temperature, and set a second period as the length of the patrol period in a case where the temperature of the memory system is a second temperature,
the first period is longer than the second period, and
the first temperature is lower than the second temperature.
7. The memory system of claim 1 , wherein
in both the first operation and the second operation, data is not output from the semiconductor memory to the controller.
8. A memory system comprising:
a semiconductor memory including blocks each containing memory cells, and
a controller configured to instruct the semiconductor memory to execute a first operation on the basis of a priority set to each of the blocks, wherein
in the first operation, the semiconductor memory selects at least one of the blocks, and applies at least one voltage to all memory cells contained in said selected at least one of the blocks, and
the controller is further configured to:
manage an address conversion table to convert a logical address associated with data stored in a block into a physical address of the semiconductor memory;
store the address conversion table in the semiconductor memory; and
at a startup time of the memory system, instruct the first operation to all blocks in which at least one piece of valid user data is stored, or all blocks in which the address conversion table is stored.
9. The memory system of claim 8 , wherein
the controller is configured to determine the priority on the basis of attribute information set to each of the blocks.
10. The memory system of claim 9 , wherein
the attribute information includes at least one of a property of data to be stored in the block, a write method used for the block, a number of write/erase cycles of the block, last write time to the block, last access time to the block, and a number of read errors in the block.
11. The memory system of claim 8 , wherein
the controller is configured to change the priority on the basis of time elapsed after the first operation to said blocks is executed.
12. The memory system of claim 8 , wherein
the controller is configured to determine the priority on the basis of address information of each of the blocks.
13. The memory system of claim 8 , wherein
the controller is configured to set the number of blocks to which said voltage is applied in one execution of the first operation, on the basis of first information received from an external host apparatus at a startup time of the memory system.
14. The memory system of claim 8 , wherein
the controller is configured to:
determine the priority associated with each of the blocks on the basis of second information received from an external host apparatus at a startup of the memory system, and
instruct the semiconductor memory to execute the first operation, on the basis of the priority.
15. A memory system comprising:
a semiconductor memory including a plurality of blocks, each of the blocks including a plurality of word lines and a plurality of memory cells, each of the word lines connecting at least one of the memory cells, the memory cells being deployed in three dimensions; and
a controller configured to:
instruct the semiconductor memory to perform a first operation after a power begins to be supplied to the memory system and before data is read out from a first block to the controller, wherein in the first operation, the semiconductor memory applies a voltage to a first word line of the first block and does not output, to the controller, data stored in a memory cell connected to the first word line; and
instruct the semiconductor memory to perform the first operation again after instructing the semiconductor memory to perform the first operation and while the first word line is in a first state in which a voltage of the first word line while the first block is not selected as an access target is higher than a first voltage.
16. The memory system according to claim 15 , wherein
the first word line is located at the outermost of the first block.
17. The memory system according to claim 15 , wherein
the controller is further configured to:
upon instructing the semiconductor memory predetermined times to execute one of a read operation, a write operation, and an erase operation to a second block, instruct the semiconductor memory to perform the first operation to a third block, the third block being a block within a group that includes the second block, the third block being different from the second block.
18. A memory system comprising:
a semiconductor memory including a plurality of blocks, each of the blocks including a plurality of word lines and a plurality of memory cells, each of the word lines connecting at least one of the memory cells, the memory cells being deployed in three dimensions; and
a controller configured to:
instruct the semiconductor memory to perform a first operation after a power begins to be supplied to the memory system and before data is read out from a first block to the controller, wherein in the first operation, the semiconductor memory applies a voltage to a first word line of the first block and does not output, to the controller, data stored in a memory cell connected to the first word line, and
instruct the semiconductor memory to perform the first operation in a case where reading data out from the first word line to the controller is required while the first word line is in a second state, the second state being a state in which a voltage of the first word line while the first block is not selected as an access target is lower than a second voltage, before instructing the semiconductor memory to read data out from the first word line.
19. The memory system according to claim 18 , wherein
the first word line is located at the outermost of the first block.
20. The memory system according to claim 18 , wherein
reading the data out from the first word line is required in accordance with a request received from a host.
21. The memory system according to claim 18 , wherein
the controller is further configured to:
upon instructing the semiconductor memory predetermined times to execute one of a read operation, a write operation, and an erase operation to a second block, instruct the semiconductor memory to perform the first operation to a third block, the third block being a block within a group that includes the second block, the third block being different from the second block.