Method for forming a composite having semiconductor structures including a nanocrystalline core and shell embedded in a matrix
Semiconductor structures having a nanocrystalline core and corresponding nanocrystalline shell and insulator coating, wherein the semiconductor structure includes an anisotropic nanocrystalline core composed of a first semiconductor material, and an anisotropic nanocrystalline shell composed of a second, different, semiconductor material surrounding the anisotropic nanocrystalline core. The anisotropic nanocrystalline core and the anisotropic nanocrystalline shell form a quantum dot. An insulator layer encapsulates the nanocrystalline shell and anisotropic nanocrystalline core.
1. A method of fabricating a semiconductor structure, the method comprising:
forming an anisotropic nanocrystalline core comprising a first semiconductor material;
forming an anisotropic nanocrystalline shell from a second, different, semiconductor material to completely surround the anisotropic nanocrystalline core,
wherein the anisotropic nanocrystalline core, and the anisotropic nanocrystalline shell form a quantum dot;
forming an insulator layer encapsulating the anisotropic nanocrystalline shell and anisotropic nanocrystalline core to form a coated quantum dot;
covalently bonding a coupling agent to an outer surface of the insulator layer; and
embedding the coated quantum dot in a matrix material, wherein
the coated quantum dot is incorporated into the matrix material by cross-linking through multiple and interchain binding to form a cross-linked semiconductor structure, or
the coated quantum dot is incorporated into the matrix material by polarity-based chemical similarity and dissolution to form a polarity based semiconductor structure, or
the coated quantum dot is incorporated into the matrix material by reactive tethering by sparse binding and chemical similarity to form a reactive tethering based semiconductor structure.
2. The method of claim 1 , wherein forming the insulator layer comprises bonding the insulator layer directly to the anisotropic nanocrystalline shell.
3. The method of claim 2 , wherein bonding the insulator layer directly to the anisotropic nanocrystalline shell comprises passivating an outermost surface of the anisotropic nanocrystalline shell.
4. The method of claim 1 , wherein forming the insulator layer comprises providing a barrier for the anisotropic nanocrystalline shell and anisotropic nanocrystalline core impermeable to an environment outside of the insulator layer.
5. The method of claim 1 , wherein forming the insulator layer comprises encapsulating only a single anisotropic nanocrystalline shell/anisotropic nanocrystalline core pairing.
6. The method of claim 4 , wherein forming the insulator layer comprises forming a layer of material selected from the group consisting of silica (SiOx), titanium oxide (TiOx), zirconium oxide (ZrOx) and alumina (AlOx).
7. The method of claim 6 , wherein forming the layer comprises forming a layer of silica and further comprises using a reverse micelle sol-gel reaction.
8. The method of claim 7 , wherein using the reverse micelle sol-gel reaction comprises dissolving the anisotropic nanocrystalline shell/nanocrystalline core pairing in a first non-polar solvent to form a first solution and, subsequently, adding the first solution along with a species selected from the group consisting of 3-aminopropyltrimethoxysilane (APTMS), 3-mercapto-trimethoxysilane, and a silane comprising a phosphonic acid or carboxylic acid functional group, to a second solution comprising a surfactant dissolved in a second non-polar solvent and, subsequently, adding ammonium hydroxide and tetraorthosilicate (TEOS) to the second solution.
9. The method of claim 8 , wherein the thickness of the insulator layer formed depends on the amount of TEOS added to the second solution.
10. The method of claim 8 , wherein the first and second non-polar solvents are cyclohexane.
11. The method of claim 6 , wherein forming the layer comprises forming a layer of silica and further comprises using a combination of dioctyl sodium sulfosuccinate (AOT) and tetraorthosilicate (TEOS).
12. The method of claim 6 , wherein forming the layer comprises forming a layer of silica and further comprises using a combination of polyoxyethylene (5) nonylphenylether and tetraorthosilicate (TEOS).
13. The method of claim 1 , wherein forming the insulator layer comprises forming the insulator layer to have a ligand-free outer surface.
14. The method of claim 1 , further comprising: ligand-functionalizing an outer surface of the insulator layer.
15. The method of claim 14 , wherein ligand-functionalizing the outer surface of the insulator layer comprises treating the semiconductor structure with a ligand selected from the group consisting of mono-, di-, or tri- alkoxysilanes with three, two or one inert or organofunctional substituents of the general formula (R1O)3SiR2; (R1O)2SiR2R3; (R10) SiR2R3R4, where R1 is methyl, ethyl, propyl, isopropyl, or butyl, R2,R3 and R4 are identical or different and are H substituents, alkyls, alkenes, alkynes, aryls, halogeno-derivates, alcohols, (mono, di, tri, poly) ethyleneglycols, (secondary, tertiary, quaternary) amines, diamines, polyamines, azides, isocyanates, acrylates, metacrylates, epoxies, ethers, aldehydes, carboxylates, esters, anhydrides, phosphates, phosphines, mercaptos, thiols, sulfonates, and are linear or cyclic, a silane with the general structure (R1O)3Si—(CH2)n-R—(CH2)n-Si(RO)3 where R and R1 is H or an organic substituent selected from the group consisting of alkyls, alkenes, alkynes, aryls, halogeno-derivates, alcohols, (mono, di, tri, poly) ethyleneglycols, (secondary, tertiary, quaternary) amines, diamines, polyamines, azides, isocyanates, acrylates, metacrylates, epoxies, ethers, aldehydes, carboxylates, esters, anhydrides, phosphates, phosphines, mercaptos, thiols, sulfonates, and are linear or cyclic, a chlorosilane, and an azasilane.
16. The method of claim 14 , wherein ligand-functionalizing the outer surface of the insulator layer comprises imparting solubility, dispersability, heat stability, photo-stability, or a combination thereof, to the semiconductor structure.
17. The method of claim 1 , wherein the anisotropic nanocrystalline core has an aspect ratio between, but not including, 1.0 and 2.0.
18. The method of claim 1 , wherein the nanocrystalline shell has a center, wherein the nanocrystalline shell extends in a first direction along a first axis and the anisotropic nanocrystalline core is off-center with respect to the anisotropic nanocrystalline shell in the first direction along the first axis, wherein the nanocrystalline shell extends in a second direction along a second axis orthogonal to the first axis, and the anisotropic nanocrystalline core is further disposed off-center with respect to the anisotropic nanocrystalline shell in the second direction along the second axis.
19. The method of claim 18 , wherein the nanocrystalline shell is longer in the first direction than in the second direction.
20. The method of claim 1 , wherein the coupling agent is selected from the group consisting of a titanate coupling agent and a zirconate coupling agent.
21. A method of fabricating a semiconductor structure, the method comprising:
forming an anisotropic nanocrystalline core comprising a first semiconductor material;
forming an anisotropic nanocrystalline shell from a second, different, semiconductor material to completely surround the anisotropic nanocrystalline core,
forming a nanocrystalline outer shell from a third semiconductor material, different from the second semiconductor material, to at least partially surround the nanocrystalline shell,
wherein the anisotropic nanocrystalline core, the anisotropic nanocrystalline shell and the nanocrystalline outer shell form a quantum dot;
forming an insulator layer encapsulating the nanocrystalline outer shell, the anisotropic nanocrystalline shell, and the anisotropic nanocrystalline core to form a coated quantum dot;
covalently bonding a coupling agent to an outer surface of the insulator layer; and
embedding the coated quantum dot in a matrix material, wherein
the coated quantum dot is incorporated into the matrix material by cross-linking through multiple and interchain binding to form a cross-linked semiconductor structure, or
the coated quantum dot is incorporated into the matrix material by polarity-based chemical similarity and dissolution to form a polarity based semiconductor structure, or
the coated quantum dot is incorporated into the matrix material by reactive tethering by sparse binding and chemical similarity to form a reactive tethering based semiconductor structure.
22. The method of claim 21 , wherein the coupling agent is selected from the group consisting of a titanate coupling agent and a zirconate coupling agent.