Systems and methods for high energy X-ray detection in electron microscopes
A system for collecting information from a sample, the system includes an X-ray detector configured to mount to an electron microscope, the X-ray detector including a detection tip with a detection material positioned in the detection tip. The detection material includes a compound semiconductor material.
1. A system for collecting information from a sample, the system including:
an X-ray detector configured to mount to an electron microscope, the X-ray detector including a detection tip; and
a detection material positioned in the detection tip, the detection material including a compound semiconductor including a first element and a second element in equal proportions.
2. The system of claim 1 , the detection material including a binary compound semiconductor.
3. The system of claim 1 , the compound semiconductor including cadmium.
4. The system of claim 1 , the compound semiconductor including tellurium.
5. The system of claim 1 , the compound semiconductor including zinc.
6. The system of claim 1 , further comprising a silicon semiconductor in the detection tip.
7. The system of claim 6 , the compound semiconductor being positioned nearer a body of the X-ray detector relative to the silicon semiconductor.
8. The system of claim 1 , the compound semiconductor having an amorphous microstructure.
9. The system of claim 1 , the compound semiconductor including at least one doping element in a weight less than 5%.
10. A system for collecting information from a sample, the system including:
a chamber;
an electron source configured to direct an electron beam into the chamber;
an X-ray detector including a detection tip positioned in the chamber; and
a detection material positioned in the detection tip, the detection material including a compound semiconductor including a first element and a second element in equal proportions.
11. The system of claim 10 , the compound semiconductor including cadmium.
12. The system of claim 11 , the compound semiconductor including tellurium.
13. The system of claim 12 , the compound semiconductor being CdTe.
14. The system of claim 13 , the CdTe having an amorphous microstructure.
15. The system of claim 10 , the detection material being a first detection material and the X-ray detector further comprising a secondary detection material positioned in the detection tip nearer a center of the chamber than the first detection material.
16. A system for collecting information from a sample, the system including:
a chamber;
an electron source configured to direct an electron beam into the chamber;
an X-ray detector including a detection tip positioned in the chamber; and
a detection material positioned in the detection tip, the detection material including a doped silicon semiconductor and a compound semiconductor, the compound semiconductor including a first element and a second element in equal proportions and the doped silicon semiconductor being positioned closer to the chamber in the detection tip than the compound semiconductor.
17. The system of claim 16 , the compound semiconductor being a binary compound semiconductor.
18. The system of claim 16 , wherein the silicon semiconductor and a compound semiconductor contact one another.
19. The system of claim 16 , further comprising a conductive layer positioned between the silicon semiconductor and a compound semiconductor.
20. The system of claim 16 , further comprising a plurality of drift rings configured to apply an electric field to both the silicon semiconductor and a compound semiconductor.