LED light source, LED light source manufacturing method, and direct display device thereof
Disclosed are an LED light source, an LED light source manufacturing method, and their direct display device. The LED light source includes a base, at least an LED chip, an anti-vulcanization structure, a light excitation structure, an encapsulation structure and a protection structure. The LED light source can overcome catalyst poison or vulcanization of the light-emitting material effectively to improve product yield and reliability of the LED light source. In the meantime, the LED light source has the feature of a better light emission performance.
1. An LED light source, comprising:
a base, comprising an upper edge, a light emitting region formed and enclosed by the upper edge, an inner mounting surface concavely formed on the base and along the upper edge, and a reflective layer disposed on the inner mounting surface;
at least an LED chip, combined with two metal wire bonds and installed at a bottom position of the inner mounting surface by solid-crystallization;
an anti-vulcanization structure, continuously and uninterruptibly formed on the reflective layer, the metal wire bonds, and a surface of the LED chip;
a light excitation structure, including at least a fluorescent powder containing an element selected from the group consisting of sulfur, lead, and phosphorus, and the light excitation structure being installed in the base;
an encapsulation structure, installed in the base, for packaging the light excitation structure and the LED chip in the base, and the anti-vulcanization structure isolating the reflective layer, the metal wire bonds and the LED chip from directly contacted with the encapsulation structure, and the encapsulation structure being made of organic silicone and containing a platinum catalyst;
a protection structure, installed at the base by a dispensing method and covering the encapsulation structure; wherein the encapsulation structure has a hardness lower than the protection structure; and
a plurality of uniform light particles scattered in the protection structure, and the uniform light particle being one selected from the group consisting of SiO 2 , BN, Al 2 O 3 , and TiO 2 or a combination thereof,
wherein the LED chip has a light emission wavelength falling within a range of 400-460 nm, and the light excitation structure comprises a green fluorescent powder, a first red fluorescent powder and a second red fluorescent powder, and the green fluorescent powder contains sulfur, and the first red fluorescent powder does not contain sulfur, and the second red fluorescent powder contains sulfur; the first red fluorescent powder is selected from the group consisting of T 2 XF 6 :Mn 4+ , M 2 Si 5 N 8 :Eu 2+ , and CaAlSiN 3 :Eu 2+ ; T is selected from the group consisting of Li, Na, K, and Rb, and X is selected from the group consisting of Ge, Si, Sn, Zr, and Ti; M is selected from the group consisting of Ca, Sr, and Ba; and the second red fluorescent powder is selected from the group consisting of CaS:Eu 2+ , SrS:Eu 2+ , Ba 2 ZnS 3 :Mn 2+ , and a red quantum dot.
2. The LED light source of claim 1 , wherein the uniform light particle has a weight percentage concentration falling within a range of 5%-15% relative to the protection structure.
3. The LED light source of claim 2 , wherein the encapsulation structure has a hardness preferably falling within a range of D20-D40.
4. The LED light source of claim 3 , wherein the protection structure has a hardness falling within a range of D60-D80.
5. The LED light source of claim 4 , wherein the anti-vulcanization structure has a thickness falling within a range of 2-10 μm.
6. The LED light source of claim 5 , wherein the base is made of a transparent material.
7. The LED light source of claim 6 , wherein the upper edge of the base is formed into a stepped shape.
8. An LED light source, comprising:
a base, comprising an upper edge, a light emitting region formed and enclosed by the upper edge, an inner mounting surface concavely formed on the base and along the upper edge, and a reflective layer disposed on the inner mounting surface;
at least an LED chip, combined with two metal wire bonds and installed at a bottom position of the inner mounting surface by solid-crystallization;
an anti-vulcanization structure, continuously and uninterruptibly formed on the reflective layer, the metal wire bonds, and a surface of the LED chip;
a light excitation structure, including at least a fluorescent powder containing an element selected from the group consisting of sulfur, lead, and phosphorus, and the light excitation structure being installed in the base;
an encapsulation structure, installed in the base, for packaging the light excitation structure and the LED chip in the base, and the anti-vulcanization structure isolating the reflective layer, the metal wire bonds and the LED chip from directly contacted with the encapsulation structure, and the encapsulation structure being made of organic silicone and containing a platinum catalyst;
a protection structure, installed at the base by a dispensing method and covering the encapsulation structure; wherein the encapsulation structure has a hardness lower than the protection structure; and
a plurality of uniform light particles scattered in the protection structure, and the uniform light particle being one selected from the group consisting of SiO 2 , BN, Al 2 O 3 , and TiO 2 or a combination thereof,
wherein the LED chip comes with a plural quantity, and the LED chips include a chip with a light emission wavelength falling within a range of 400-460 nm and a green chip, and the light excitation structure includes a second red fluorescent powder containing sulfur; and the second red fluorescent powder is selected from the group consisting of CaS:Eu 2+ , SrS:Eu 2+ , Ba 2 ZnS 3 :Mn 2+ and a red quantum dot.
9. The LED light source of claim 8 , wherein the uniform light particle has a weight percentage concentration falling within a range of 5%-15% relative to the protection structure.
10. The LED light source of claim 9 , wherein the encapsulation structure has a hardness preferably falling within a range of D20-D40.
11. The LED light source of claim 10 , wherein the protection structure has a hardness falling within a range of D60-D80.
12. The LED light source of claim 11 , wherein the anti-vulcanization structure has a thickness falling within a range of 2-10 μm.
13. The LED light source of claim 12 , wherein the base is made of a transparent material.
14. The LED light source of claim 13 , wherein the upper edge of the base is formed into a stepped shape.
15. An LED light source, comprising:
a base, comprising an upper edge, a light emitting region formed and enclosed by the upper edge, an inner mounting surface concavely formed on the base and along the upper edge, and a reflective layer disposed on the inner mounting surface;
at least an LED chip, combined with two metal wire bonds and installed at a bottom position of the inner mounting surface by solid-crystallization;
an anti-vulcanization structure, continuously and uninterruptibly formed on the reflective layer, the metal wire bonds, and a surface of the LED chip;
a light excitation structure, including at least a fluorescent powder containing an element selected from the group consisting of sulfur, lead, and phosphorus, and the light excitation structure being installed in the base;
an encapsulation structure, installed in the base, for packaging the light excitation structure and the LED chip in the base, and the anti-vulcanization structure isolating the reflective layer, the metal wire bonds and the LED chip from directly contacted with the encapsulation structure, and the encapsulation structure being made of organic silicone and containing a platinum catalyst;
a protection structure, installed at the base by a dispensing method and covering the encapsulation structure; wherein the encapsulation structure has a hardness lower than the protection structure; and
a plurality of uniform light particles scattered in the protection structure, and the uniform light particle being one selected from the group consisting of SiO 2 , BN, Al 2 O 3 , and TiO 2 or a combination thereof,
wherein the LED chip comes with a plural quantity and the LED chips include a chip with a light emission wavelength falling within a range of 400-460 nm and a green chip, and the light excitation structure includes a first red fluorescent powder and a second red fluorescent powder, and the first red fluorescent powder does not contain sulfur, and the second red fluorescent powder contains sulfur; and the first red fluorescent powder is selected from the group consisting of T 2 XF 6 :Mn 4+ , M 2 Si 5 N 8 :Eu 2+ , and CaAlSiN 3 :Eu 2+ ; T is an element selected from the group consisting of Li, Na, K, and Rb; X is an element selected from the group consisting of Ge, Si, Sn, Zr and Ti; M is an element selected from the group consisting of Ca, Sr, and Ba; and the second red fluorescent powder is selected from the group consisting of CaS:Eu 2+ , SrS:Eu 2+ , Ba 2 ZnS 3 :Mn 2+ , and a red quantum dot.
16. The LED light source of claim 15 , wherein the uniform light particle has a weight percentage concentration falling within a range of 5%-15% relative to the protection structure.
17. The LED light source of claim 16 , wherein the encapsulation structure has a hardness preferably falling within a range of D20-D40.
18. The LED light source of claim 17 , wherein the protection structure has a hardness falling within a range of D60-D80.
19. The LED light source of claim 18 , wherein the anti-vulcanization structure has a thickness falling within a range of 2-10 μm.
20. The LED light source of claim 19 , wherein the base is made of a transparent material.
21. The LED light source of claim 20 , wherein the upper edge of the base is formed into a stepped shape.