Sn doped ZnS nanowires for white light source material
According to exemplary embodiments, a method of synthesizing tin (Sn)-doped Zinc Sulfide (ZnS) nanostructures for electroluminescent white light source includes coating a substrate, including a silicon oxide layer, with Sn by vacuuming depositing Sn as catalyst nanostructures on the substrate, placing the substrate coated with Sn in a furnace, introducing a carrier flow gas into the furnace, adding a ZnS power to the furnace, growing ZnS nanostructures, and dissolving Sn in the growing ZnS nanostructures. The S vacancies are on a surface of the ZnS nanostructures. The ZnS nanostructures are grown on the substrate having a temperature in a range of 750° C. to 850° C.
1. A method of synthesizing tin (Sn)-doped Zinc Sulfide (ZnS) nanostructures for electroluminescent white light source, comprising:
coating a substrate, comprising a silicon oxide layer, with Sn by vacuuming depositing Sn as catalyst nanostructures on the substrate;
placing the substrate coated with Sn in a furnace;
introducing a carrier flow gas into the furnace;
adding a ZnS powder to the furnace;
growing ZnS nanostructures; and
dissolving Sn in the growing ZnS nanostructures;
wherein S vacancies are on a surface of the ZnS nanostructures,
wherein the ZnS nanostructures are grown on the substrate having a temperature in a range of 750° C. to 850° C.,
wherein the Sn self-doped ZnS nanostructures have broad emission in a range of 400 nm to 650 nm,
wherein the deposited Sn is 2 nm or less,
and wherein the ZnS nanostructures doped with Sn are grown on the substrate having a temperature of 780° C.
2. The method of claim 1 , wherein blue, red, and green emissions of the ZnS nanostructures are controlled by growth conditions of Sn doped ZnS nanostructures.
3. The method of claim 1 , wherein the carrier flow gas is a mixture of hydrogen and nitrogen gas is in a ratio of 1:4 that is introduced at flow rate of 30 Sccm.