Method of producing a radiation-emitting semiconductor chip and radiation-emitting semiconductor chip
A method of producing a radiation-emitting semiconductor chip includes providing a growth substrate, epitaxially growing a buffer layer on the growth substrate such that a plurality of V-pits is generated in the buffer layer, epitaxially growing a radiation-generating active semiconductor layer sequence on the buffer layer, wherein the structure of the V-pits continues into the active semiconductor layer sequence, epitaxially growing a further layer sequence on the active semiconductor layer sequence, wherein the structure of the V-pits continues into the further layer sequence, selectively removing the further layer sequence from facets of the V-pits, wherein the further layer sequence remains on a main surface of the active semiconductor layer sequence, and epitaxially growing a p-doped semiconductor layer that completely or partially fills the V-pits.
1. A method of producing a radiation-emitting semiconductor chip comprising:
providing a growth substrate,
epitaxially growing a buffer layer on the growth substrate such that a plurality of V-pits is generated in the buffer layer,
epitaxially growing a radiation-generating active semiconductor layer sequence on the buffer layer, wherein the structure of the V-pits continues into the active semiconductor layer sequence,
epitaxially growing a further layer sequence on the active semiconductor layer sequence, wherein the structure of the V-pits continues into the further layer sequence,
selectively removing the further layer sequence from facets of the V-pits, wherein the further layer sequence remains on a main surface of the active semiconductor layer sequence, and
epitaxially growing a p-doped semiconductor layer that completely or partially fills the V-pits.
2. The method according to claim 1 , wherein
the active semiconductor layer sequence has a plurality of quantum films separated from one another by barrier layers, and
the quantum films have InGaN and the barrier layers have GaN or AlGaN.
3. The method according to claim 1 , wherein the further layer sequence is completely removed from the facets of the V-pits such that the p-doped semiconductor layer at the facets is in direct contact with the active semiconductor layer sequence.
4. The method according to claim 1 , wherein the further layer sequence is formed from alternately arranged AlGaN layers and InGaN layers or from alternately arranged AlGaN layers and GaN layers or from alternately arranged InGaN layers and GaN layers.
5. The method according to claim 4 , wherein the thickness of the further layer sequence on the facets of the V-pits is formed thinner than on a main surface of the active semiconductor layer sequence.
6. The method according to claim 4 , wherein the aluminum content and/or indium content of the further layer sequence applied to the facets of the V-pits is reduced relative to the aluminum content and/or the indium content of the further layer sequence applied to the main surface of the active semiconductor layer sequence.
7. The method according to claim 1 , wherein the further layer sequence is selectively removed in situ from the facets of the V-pits by etching in the epitaxy reactor.
8. The method according to claim 7 , wherein a hydrogen content during the etching process is increased relative to a hydrogen content during the epitaxial growth process within the epitaxy reactor.