Image sensor, manufacturing method, and electronic device

1. An image sensor, comprising:

a sensor chip having a pixel array unit in which pixels that perform photoelectric conversion are arrayed,

wherein the pixel array is provided within the sensor chip such that end portions of the sensor chip extend over end portions of the pixel array;

a logic chip affixed to a first side of the sensor chip and electrically connected to the sensor chip;

a plate-like transparent member affixed to the pixel array unit on a second side of the sensor chip opposite the first side of the sensor chip; and

an adhesive layer provided between the sensor chip and the plate-like transparent member and in continuous physical contact with the second side of the sensor chip and a first side of the plate-like transparent member,

wherein a length in a horizontal direction of the plate-like transparent member is longer than a length in the horizontal direction of each of the sensor chip and the logic chip such that end portions of the plate-like transparent member extend over end portions of each of the sensor chip and the logic chip,

wherein the length in the horizontal direction of each of the sensor chip, the logic chip and the adhesive layer is substantially the same,

wherein a thickness of the plate-like transparent member is greater than a thickness of the end portions of the sensor chip extending over the end portions of the pixel array,

wherein the plate-like transparent member has an isosceles trapezoidal cross-sectional shape, and

wherein the length in the horizontal direction of the first side of the plate-like transparent member affixed to the second side of the sensor chip is longer than the length in the horizontal direction of a second side of the plate-like transparent member.

2. The image sensor according to claim 1 , further comprising an infrared cut filter (IRCF) film which is attached to the transparent member.

3. The image sensor according to claim 1 , wherein the transparent member is a transparent member which absorbs infrared rays.

4. The image sensor according to claim 1 , wherein the image sensor is mounted by wire bonding or flip chip.

5. The image sensor according to claim 1 , further comprising a light shielding film which is formed on a peripheral portion of the transparent member.

6. The image sensor according to claim 1 , further comprising a resin which seals surroundings of the sensor chip.

7. The image sensor according to claim 1 , wherein the thickness of the transparent member is 200 μm or more.

8. A manufacturing method of an image sensor, comprising:

affixing and electrically connecting a logic chip to a first side of a sensor chip,

wherein the sensor chip has a pixel array unit in which pixels that perform photoelectric conversion are arrayed, and

wherein the pixel array is provided within the sensor chip such that end portions of the sensor chip extend over end portions of the pixel array;

affixing a plate-like transparent member to the pixel array unit on a second side of a sensor chip opposite the first side of the sensor chip; and

affixing an adhesive layer between the sensor chip and the plate-like transparent member and in continuous physical contact with the second side of the sensor chip and a first side of the plate-like transparent member,

wherein a length in horizontal direction of the plate-like transparent member is longer that a length in the horizontal direction of each of the sensor chip and the logic chip such that end portions of the plate-like transparent member extend over end portions of each of the sensor chip and the logic chip,

wherein the length in the horizontal direction of each of the sensor chip, the logic chip and the adhesive layer is substantially the same,

wherein a thickness of the plate-like transparent member is greater than a thickness of the end portions of the sensor chip extending over the end portions of the pixel array,

wherein the plate-like transparent member has an isosceles trapezoidal cross-sectional shape, and

wherein the length in the horizontal direction of the first side of the plate-like transparent member affixed to the second side of the sensor chip is longer than the length in the horizontal direction of a second side of the plate-like transparent member.

9. The manufacturing method according to claim 8 , further comprising attaching an infrared cut filter (IRCF) film to the transparent member.

10. The manufacturing method according to claim 8 , wherein the transparent member is a transparent member which absorbs infrared rays.

11. The manufacturing according to claim 8 , further comprising mounting the image sensor by wire bonding or flip chip.

12. The manufacturing method according to claim 8 , further comprising a forming a light shielding film on a peripheral portion of the transparent member.

13. The manufacturing method according to claim 8 , further comprising sealing surroundings of the sensor chip with a resin.

14. The manufacturing method according to claim 8 , wherein the thickness of the transparent member is 200 μm or more.

15. An electronic device, comprising:

an optical system which collects light; and

an image sensor which receives the light and captures an image,

wherein the image sensor comprises:

a sensor chip having a pixel array unit in which pixels that perform photoelectric conversion are arrayed,

wherein the pixel array is provided within the sensor chip such that end portions of the sensor chip extend over end portions of the pixel array;

a logic chip affixed to a first side of the sensor chip and electrically connected to the sensor chip;

a plate-like transparent member affixed to the pixel array unit on a second side of the sensor chip opposite the first side of the sensor chip; and

an adhesive layer provided between the sensor chip and the plate-like transparent member and in continuous physical contact with the second side of the sensor chip and a first side of the plate-like transparent member,

wherein a length in a horizontal direction of the plate-like transparent member is longer than a length in the horizontal direction of each of the sensor chip and the logic chip such that end portions of the plate-like transparent member extend over end portions of each of the sensor chip and the logic chip,

wherein the length in the horizontal direction of each of the sensor chip, the logic chip and the adhesive layer is substantially the same,

wherein a thickness of the plate-like transparent member is greater than a thickness of the end portions of the sensor chip extending over the end portions of the pixel array,

wherein the plate-like transparent member has an isosceles trapezoidal cross-sectional shape, and

wherein the length in the horizontal direction of the first side of the plate-like transparent member affixed to the second side of the sensor chip is longer than the length in the horizontal direction of a second side of the plate-like transparent member.

16. The electronic device according to claim 15 , further comprising an infrared cut filter (IRCF) film which is attached to the transparent member.

17. The electronic device according to claim 15 , wherein the transparent member is a transparent member which absorbs infrared rays.

18. The electronic device according to claim 15 , wherein the image sensor is mounted by wire bonding or flip chip.

19. The electronic device according to claim 15 , further comprising a light shielding film which is formed on a peripheral portion of the transparent member.

20. The electronic device according to claim 15 , further comprising a resin which seals surroundings of the sensor chip.