IP Library Granted Patent US 10,984,980
Granted Patent B2
US 10,984,980 · App. 16/071,816 · Granted Apr 20, 2021

Charged particle beam device for imaging vias inside trenches

Inventors: Kei Sakai (Tokyo, JP); Satoru Yamaguchi (Tokyo, JP); Hideki Itai (Tokyo, JP); Yasunori Takasugi (Tokyo, JP); Kumiko Shimizu (Tokyo, JP)
Assignee: Hitachi High-Tech Corporation
H01J37/28H01J37/147H01J37/22H01J37/265H01J2237/281H01J2237/2803
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Quick Facts
Patent No.
US 10,984,980
App. No.
16/071,816
Granted
Apr 20, 2021
Kind
B2
Abstract

The objective of the present invention is to provide a charged particle beam device for setting, from an image of a trench-like groove or a pit, device conditions for finding a hole or the like provided in the trench or the pit, or measuring a hole or the like provided inside the trench or the like with high accuracy. In the present invention, a charged particle beam device comprises: a deflector for causing a charged particle beam emitted from a charged particle source to perform a scan; a detector for detecting a charged particle obtained on the basis of the scanning of the charged particle beam; and a computation processing device for generating an image on the basis of the output of the detector. In the charged particle beam device, the computation processing device specifies, from within the generated image, a relatively dark region with respect to other parts thereof, and controls the deflector in such a manner that the charged particle beam selectively scans a sample position corresponding to the dark region.

Claims (22)

1. A charged particle beam device comprising:

a deflector for causing a charged particle beam emitted from a charged particle source to perform a scan;

a detector for detecting a charged particle obtained based on the scanning of the charged particle beam; and

a computation processing device for generating an image based on an output of the detector, wherein

the computation processing device specifies, from within an image obtained by controlling the deflector such that a scan path of a first direction intersects an edge of a pattern formed on a sample, a relatively dark region with respect to other parts thereof, and controls the deflector such that a scan path is selectively set at a position of the sample corresponding to the dark region, and along a second direction as a longitudinal direction of the dark region, to specify a part in the dark region having a luminance different from luminances in other regions in the dark region, the second direction being selected such that the other parts are not in the scan path.

2. The charged particle beam device according to claim 1 , wherein

the computation processing device sets a scan direction of the charged particle beam such that a scanning line direction of the charged particle beam is made along the longitudinal direction of the dark region.

3. The charged particle beam device according to claim 1 , wherein

the computation processing device performs dimension measurement of a pattern included in the dark region based on a signal obtained by selectively scanning the pattern included in the dark region.

4. The charged particle beam device according to claim 1 , wherein

the computation processing device determines whether to perform pattern dimension measurement included in the dark region based on a signal obtained by selectively scanning the pattern included in the dark region.

5. The charged particle beam device according to claim 1 , wherein

the dark region is a trench including a via thereinside.

6. A charged particle beam device comprising:

a deflector for causing a charged particle beam emitted from a charged particle source to perform a scan;

a detector for detecting a charged particle obtained based on the scanning of the charged particle beam; and

a computation processing device for generating an image based on an output of the detector, wherein

the computation processing device specifies, from within an image obtained by controlling the deflector such that a scan path of a first direction intersects an edge of a pattern formed on a sample, a relatively dark region with respect to other parts thereof, and sets a scanning line direction and a scan region of the deflector such that a scan path is selectively set at a position of the sample corresponding to the dark region, and along a second direction as a longitudinal direction of the dark region, to specify a part in the dark region having a luminance different from luminances in other regions in the dark region so as to make the scanning line direction along a longitudinal direction of the dark region, the second direction being selected such that the other parts are not in the scan path.

7. The charged particle beam device according to claim 6 , wherein

the computation processing device sets a scan region such that a region of scanning with respect to the longitudinal direction of the dark region is included in the sample position corresponding to the dark region.

8. The charged particle beam device according to claim 6 , wherein

the computation processing specifies a longitudinal direction of a trench formed on the sample based on the specification of the dark region and sets scan conditions such that the scanning line direction is parallel to the longitudinal direction.

Assignments (2)
CHANGE OF NAME Recorded Apr 14, 2020
From: HITACHI HIGH-TECHNOLOGIES CORPORATION
To: HITACHI HIGH-TECH CORPORATION
Reel/Frame 052398/0249 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 25, 2018
From: SAKAI, KEI; YAMAGUCHI, SATORU; ITAI, HIDEKI; TAKASUGI, YASUNORI; SHIMIZU, KUMIKO
To: HITACHI HIGH-TECHNOLOGIES CORPORATION
Reel/Frame 046461/0418 →
Continuity (1)
Related Publication 20190035600A1 · Jan 31, 2019