Conversion element and radiation-emitting semiconductor device comprising a conversion element of said type

1. Conversion element with

an active region formed with a semiconductor material and comprising a plurality of barriers and quantum wells,

a plurality of first structural elements arranged on a top side of the conversion element, and

a plurality of second structural elements and third structural elements arranged on top of each other in separate planes on a side of the active region facing away from the plurality of first structural elements,

an intermediate region adjacent to the active region, wherein

the intermediate region has a greater electronic bandgap than the active region,

the plurality of first structural elements is formed in the active region, the conversion element is optically pumped during operation with a pump radiation which is a primary radiation and emits secondary radiation by conversion of the primary radiation into secondary radiation with a longer wavelength than the pump radiation,

the first structural elements are coupling-out structures and the second and third structural elements are coupling-in structures or the first structural elements are coupling-in structures and the second and third structural elements are coupling-out structures,

the first structural elements differ in their size from the second and/or third structural elements, and

the conversion element comprises no electrical contact layers or electrical connecting surfaces.

2. Conversion element according to claim 1 with

a carrier which is formed with a radiation-transmissive material, wherein

the plurality of second structural elements is arranged on an outer surface of the carrier facing the active region, and/or

the plurality of third structural elements is arranged on an outer surface of the carrier facing away from the active region.

3. Conversion element according to claim 1 , in which the plurality of first structural elements increases the probability of an emission of electromagnetic radiation from the conversion element, and the plurality of second structural elements and third structural elements increase the probability of the entry of electromagnetic radiation into the active region.

4. Conversion element according to claim 1 , in which the active region comprises at least 10 quantum wells.

5. Conversion element according to claim 1 , in which the plurality of first structural elements is formed by V-defects in the active region.

6. Conversion element according to claim 1 , in which the plurality of first, second and/or third structural elements is formed by at least one etching process.

7. Conversion element according to claim 1 , with a carrier, wherein the carrier is part of a growth substrate having a growth surface facing the active region for the active region, and the plurality of second structural elements comprises a level surface having a plurality of elevations disposed on the growth surface of the carrier facing the active region.

8. Conversion element according to claim 1 , in which the plurality of third structural elements is formed by roughening the outer surface of the carrier facing away from the active region.

9. Radiation-emitting semiconductor device with

a conversion element according to claim 1 , and

a pump source which generates the primary radiation during operation, wherein

the pump source is mechanically connected to the conversion element,

the plurality of first structural elements of the conversion element is arranged on the side of the active region facing the pump source,

the plurality of first structural elements is arranged between the pump source and the plurality of second structural elements or third structural elements, and

in the active region of the conversion element the secondary radiation is generated upon excitation by the primary radiation.

10. Radiation-emitting semiconductor device according to claim 9 , in which a connection area is arranged directly between the conversion element and the pump source and mediates the mechanical connection between the conversion element and the pump source.

11. Conversion element according to claim 1 , in which the active region comprises at least 35 quantum wells.

12. Conversion element according to claim 1 , in which the intermediate region is formed with at least one of the following materials: GaN, InGaN, InAlGaN.

13. Conversion element according to claim 1 , in which the intermediate region comprises a first subarea and a second subarea, wherein the first subarea is formed from a nominally undoped GaN layer and the second subarea is formed from an n-doped GaN layer.

14. Conversion element with

an active region formed with a semiconductor material and comprising a plurality of barriers and quantum wells,

a plurality of first structural elements arranged on a top side of the conversion element, and

a plurality of second structural elements and third structural elements arranged on top of each other in separate planes on a side of the active region facing away from the plurality of first structural elements,

an intermediate region adjacent to the active region, wherein

the intermediate region has a greater electronic bandgap than the active region,

the plurality of first structural elements is formed in the active region, the conversion element is optically pumped during operation with a pump radiation which is a primary radiation and emits secondary radiation by conversion of the primary radiation into secondary radiation with a longer wavelength than the pump radiation,

the second and the third structural elements are predominantly intended to scatter radiation entering the conversion element with which the conversion element is pumped during operation,

the first structural elements have a smaller diameter than the second and/or third structural elements, and

the conversion element comprises no electrical contact layers or electrical connecting surfaces.