Two-stage bake photoresist with releasable quencher
Two-stage bake photoresists with releasable quenchers for fabricating back end of line (BEOL) interconnects are described. In an example, a photolyzable composition includes an acid-deprotectable photoresist material having substantial transparency at a wavelength, a photo-acid-generating (PAG) component having substantial transparency at the wavelength, and a base-generating component having substantial absorptivity at the wavelength.
1. A photolyzable composition, comprising:
an acid-deprotectable photoresist material having substantial transparency at a wavelength, wherein the acid-deprotectable photoresist material is an acid-deprotectable material selected from the group consisting of a molecular glass, a carbosilane and a metal oxide;
a photo-acid-generating (PAG) component having substantial transparency at the wavelength; and
a base-generating component having substantial absorptivity at the wavelength, wherein the base-generating component comprises N,N-dicyclohexyl-2-nitrophenylcarbamate.
2. The photolyzable composition of claim 1 , wherein the PAG component comprises a material selected from the group consisting of triethyl, trimethyl and other trialkylsulfonates, where the sulfonate group is selected from the group consisting of trifluoromethylsulfonate, nonanfluorobutanesulfonate, and p-tolylsulfonate.
3. The photolyzable composition of claim 1 , wherein the acid-deprotectable photoresist material comprises a material selected from the group consisting of a polyhydroxystyrene, a polymethacrylate, small molecular weight molecular glass versions of a polyhydroxystyrene or a polymethacrylate which contain ester functionality sensitive to acid-catalyzed deprotection to carboxylic acid, a carbosilane, and a metal oxide possessing functionality sensitive to acid catalyzed deprotection or cross-linking.
4. The photolyzable composition of claim 1 , wherein the wavelength is approximately 365 nm.
5. The photolyzable composition of claim 1 , wherein the acid-deprotectable photoresist material is substantially absorbing at a wavelength of approximately 13.5 nanometers.
6. The photolyzable composition of claim 1 , wherein the acid-deprotectable photoresist material is substantially absorbing at an energy approximately in the range of 5-150 keV.
7. The photolyzable composition of claim 1 , wherein a molar ratio of the PAG component to the base-generating component is at least 50:1.
8. A photolyzable composition, comprising:
an acid-deprotectable photoresist material having substantial transparency at 365 nm, wherein the acid-deprotectable photoresist material is an acid-deprotectable material selected from the group consisting of a molecular glass, a carbosilane and a metal oxide;
a photo-acid-generating (PAG) component having substantial transparency at 365 nm; and
a photo-base-generating component having substantial absorptivity at 365 nm, wherein a molar ratio of the PAG component to the photo-base-generating component is at least 50:1, and wherein the base-generating component comprises N,N-dicyclohexyl-2-nitrophenylcarbamate.
9. The photolyzable composition of claim 8 , wherein the acid-deprotectable photoresist material is substantially absorbing at a wavelength of approximately 13.5 nanometers or is substantially absorbing at an energy approximately in the range of 5-150 keV.
10. A photolyzable composition, comprising:
a photoresist material having substantial transparency at a wavelength, wherein the photoresist material comprises an acid-deprotectable metal oxide material;
a photo-acid-generating (PAG) component having substantial transparency at the wavelength; and
a base-generating component having substantial absorptivity at the wavelength.
11. The photolyzable composition of claim 10 , wherein the base-generating component comprises N,N-dicyclohexyl-2-nitrophenylcarbamate.