BAW RESONATOR LESS PRONE TO SPURIOUS MODES, BAW FILTER, AND MANUFACTURING METHOD

1 . A BAW resonator (BAWR) having reduced spurious modes, comprising

a bottom electrode (BE) and a top electrode (TE),

a bottom piezoelectric layer (BPL) that is arranged between the bottom electrode (BE) and the top electrode (TE),

a top piezoelectric layer (TPL) that is arranged between the bottom piezoelectric layer (BPL) and the top electrode (TE), and

a conductive layer (CL) that is arranged between the bottom piezoelectric layer (BPL) and the top piezoelectric layer (TPL), wherein

the conductive layer (CL) is electrically floating.

2 . The BAW resonator of the preceding claim that also comprises n additional conductive layers (ACL) between the bottom piezoelectric layer (BPL) and the top piezoelectric layer (TPL), and n additional piezoelectric layers (APL) between the bottom piezoelectric layer (BPL) and the top piezoelectric layer (TPL), in such a manner that each conductive layer (ACL, CL) is separated from another conductive layer (ACL, CL) by at least one piezoelectric layer (APL, BPL, TPL), wherein n is a natural number ≥1.

3 . The BAW resonator according to any of the preceding claims, wherein the conductive layer (CL) reduces an electrical field of a horizontal orientation in a border region of the resonator (BAWR).

4 . The BAW resonator according to any of the preceding claims, wherein

the overlap region of the bottom electrode (BE), the piezoelectric layers (BPL, APL, TPL), and the top electrode (TE) determines the active region of the resonator, and

the conductive layer (CL) has a homogeneous material composition and homogeneous thickness within the active region.

5 . The BAW resonator according to any of the preceding claims, wherein

a thickness extensional wave mode having a half wavelength λ/2 can propagate in a direction of the thickness of the resonator (BAWR), and

the conductive layer (CL) has a thickness between 0.01λ and 0.1λ.

6 . The BAW resonator according to any of the preceding claims, wherein

the material of the piezoelectric layers (BPL, APL, TPL) is chosen from LiTaO 3 , LiNbO 3 , quartz, AlN, Sc-doped AlN, PZT, ZnO,

the material of the electrode layers (BE, TE) is chosen from Al, Cu, Ag, Au, W, Ru, Mo, Ti, Ta, an alloy having at least two of these metals, AlCu, and

the material of the conductive layer (CL, ACL) is chosen from Al, Cu, Ag, Au, W, Ru, Mo, Ti, Ta, an alloy having at least two of these metals, AlCu.

7 . The BAW resonator according to any of the preceding claims with 50 nm≤d≤500 nm, wherein d is the thickness of the conductive layer (CL, ACL).

8 . The BAW resonator according to any of the preceding claims, wherein the resonator (BAWR) is an SMR-type resonator or a TFBAR-type resonator.

9 . The BAW filter, comprising

two or more BAW resonators (BAWR) according to any of the preceding claims and a carrier (C), wherein

the resonators (BAWR) are arranged next to one another on the carrier (C),

two resonators (BAWR) have a respective conductive layer (CL) at the same vertical position, and

the two conductive layers (CL) are electrically separated from one another.

10 . A method for manufacturing a BAW resonator (BAWR) according to any of claims 1 through 6 , including the steps:

generate a bottom electrode (BE),

generate a bottom piezoelectric layer (BPL) on the bottom electrode (BE),

generate a conductive layer (CL) on the bottom piezoelectric layer (BPL),

generate a top piezoelectric layer (TPL) on the conductive layer (CL),

generate a top electrode (TE) on the top piezoelectric layer (TPL).

11 . The method according to the preceding claim, further including the step

alternating generation of additional conductive layers (ACL) and additional piezoelectric layers (APL) between the bottom piezoelectric layer (BPL) and the top piezoelectric layer (TPL).